Abstract: Provided is an ultra large-width coating device applied to a consecutive process. More particularly, the present invention relates to a coating device capable of maximizing productivity by consecutively manufacturing a large-width film without reducing physical properties of the manufactured film by overcoming a problem in that a coating width is limited during a coating process using the existing contact type coating roller, and a method for manufacturing an ultra large-width membrane using the same.

Abstract: A semiconductor device includes a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern and second sheet patterns, a height of the second lower pattern being smaller than a height of the first lower pattern; a first gate structure on the first lower pattern; a second gate structure on the second lower pattern; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a width of an upper surface of the first lower pattern is different from a width of an upper surface of the second lower pattern, and wherein a number of first sheet patterns is different from a number of second sheet patterns.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film including a polyurethane resin; at least one other resin selected from the group of an ethylene-vinyl acetate copolymer resin, an acrylonitrile resin, and a styrene resin; isobornyl acrylate; and conductive particles.

Abstract: A semiconductor device connected using an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition including a thermosetting polymerization initiator; and tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate, wherein the tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate is present in the composition in an amount of 1 wt % to 25 wt %, based on the total weight of the composition in terms of solid content.

Abstract: A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.

Abstract: A semiconductor device including a first connecting member including a first electrode; a second connecting member including a second electrode; and an anisotropic conductive film between the first connecting member and the second connecting member, the anisotropic conductive film bonding the first electrode to the second electrode, wherein the anisotropic conductive film exhibits linear indentations in an inter-terminal space of the second connecting member after pre-compression and primary compression of the anisotropic conductive film onto the first and second connecting members.

Abstract: A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.

Abstract: A semiconductor device including a first connecting member including a first electrode; a second connecting member including a second electrode; and an anisotropic conductive film between the first connecting member and the second connecting member, the anisotropic conductive film bonding the first electrode to the second electrode, wherein the anisotropic conductive film exhibits linear indentations in an inter-terminal space of the second connecting member after pre-compression and primary compression of the anisotropic conductive film onto the first and second connecting members.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film including a polyurethane resin; at least one other resin selected from the group of an ethylene-vinyl acetate copolymer resin, an acrylonitrile resin, and a styrene resin; isobornyl acrylate; and conductive particles.

Abstract: A semiconductor device connected using an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition including a thermosetting polymerization initiator; and tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate, wherein the tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate is present in the composition in an amount of 1 wt % to 25 wt %, based on the total weight of the composition in terms of solid content.