Abstract: Embodiments relate to a method of manufacturing a semiconductor device, wherein voids on a copper seed layer may be removed. According to embodiments, a method of manufacturing a semiconductor device may include forming at least one type of an insulating layer on the entire surface of a semiconductor substrate, forming a contact hole and a trench, through which a portion of the semiconductor substrate is exposed, forming an anti-diffusion layer on inner walls of the contact hole and the trench, forming a copper seed layer on the anti-diffusion layer, removing a copper oxide layer exposed on a surface of the copper seed layer through a wet etching process, and forming a copper metal layer in the contact hole and the trench.

Abstract: A semiconductor device and a method of forming a metal pad of a semiconductor device is provided. The method includes forming a pre-metal dielectric (PMD) layer on a semiconductor substrate and a metal plug through the pre-metal dielectric layer. A metal layer may then be formed on the pre-metal dielectric layer including the metal plug and the metal layer may be selectively etched to form a wiring and a metal pad. Next, a passivation layer may be formed on the PMD layer including the wiring and the metal pad and a photoresist pattern may be formed on the passivation layer. The passivation layer may be selectively removed to expose the metal pad, the photoresist pattern may be removed and a wet cleaning process may be peformed. Then, a radio frequency (RF) sputter etch process may be performed on the semiconductor substrate on which the wet cleaning process has been performed.

Abstract: Embodiments relate to a method of manufacturing a semiconductor device, wherein voids on a copper seed layer may be removed. According to embodiments, a method of manufacturing a semiconductor device may include forming at least one type of an insulating layer on the entire surface of a semiconductor substrate, forming a contact hole and a trench, through which a portion of the semiconductor substrate is exposed, forming an anti-diffusion layer on inner walls of the contact hole and the trench, forming a copper seed layer on the anti-diffusion layer, removing a copper oxide layer exposed on a surface of the copper seed layer through a wet etching process, and forming a copper metal layer in the contact hole and the trench.

Abstract: Embodiments relate to a method for forming a copper line. According to embodiments, the method may include forming an insulation layer on a semiconductor substrate, forming a copper line pattern on the insulation layer, and forming a copper line; removing a copper oxide layer through a reactive preclean process, the copper oxide layer being formed on a surface of the copper line in the step of forming the copper line, and depositing a capping layer covering the copper line and the insulation layer without the reactive preclean process and vacuum interruption.