Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

Abstract: A ceramic electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell surrounding at least a portion of the core, and a second shell surrounding at least a portion of the first shell, and a concentration of a rare earth element included in the second shell is more than 1.3 times to less than 3.8 times a concentration of a rare earth element included in the first shell.

Abstract: There is provided a semiconductor device capable of improving performance and reliability of an element. The semiconductor device includes an active pattern extending in a first direction, and a plurality of gate structures spaced apart from each other in the first direction on the active pattern. Each gate structure comprises a gate electrode extending in a second direction and a gate spacer on a sidewall of the gate electrode and a source/drain pattern disposed between adjacent gate structures. The gate structure comprises a semiconductor liner layer and a semiconductor filling layer on the semiconductor liner layer, wherein the semiconductor liner layer and the semiconductor filling layer are formed of silicon-germanium. The semiconductor filling layer comprises an upper portion protruding in a third direction beyond an upper surface of the active pattern.

Abstract: A vehicular air conditioning system includes: a refrigerant circulation line including first and second evaporators through which refrigerant can flow in a cooling mode, and first and second expansion valves configured to depressurize and expand the refrigerant introduced into each of the first and second evaporators; and refrigerant flow control part provided in front of the first evaporator and the first expansion valve and configured to control refrigerant flow. The first evaporator is used for cooling rear seat region of a passenger room and the refrigerant flow control part is configured to supply and block the refrigerant with respect to the first evaporator and the first expansion valve and is configured to block the refrigerant when the cooling governed by the first evaporator is controlled in a turn-off mode and supply the refrigerant to the first evaporator and the first expansion valve depending on the on/off condition of the cooling governed by the second evaporator.

Abstract: A polyimide precursor monomer having an E value of 2.0 or more calculated by Equation 1 is selected among polyimide raw materials. A polyimide includes a structural unit derived from the polyimide precursor monomer having the E value of 2.0 or more. Optical properties of a polyimide film formed from the polyimide can be improved, and the optical properties of a polyimide film can be predicted from the E value of the polyimide precursor monomer even before production of the polyimide film.

Abstract: A ceramic electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell surrounding at least a portion of the core, and a second shell surrounding at least a portion of the first shell, and a concentration of a rare earth element included in the second shell is more than 1.3 times to less than 3.8 times a concentration of a rare earth element included in the first shell.

Abstract: An inkjet head unit capable of performing high-resolution pixel printing on a large-size substrate and a substrate treatment apparatus including the inkjet head unit are provided. The substrate treatment apparatus includes: a processing unit supporting and moving a substrate; an inkjet head unit performing pixel printing on the substrate; and a gantry unit moving the inkjet head unit over the substrate, wherein the inkjet head unit includes head packs, which include a plurality of nozzles ejecting a substrate treatment liquid onto the substrate, and a head base, in which the head packs are installed and the head packs are disposed in a single row in the head base.

Abstract: A transversal radio frequency filter circuit having a low noise amplifier connected along an input signal path, a first power divider connected between the low noise amplifier and four single taps, and an output path connected to the outputs of each of the four single taps. Each of the four single taps having a coefficient control mechanism, a polarity selection mechanism, and a time delay element. The coefficient control mechanism can include a wideband digital step attenuator configured to support high control range of the coefficient. Additionally, the circuit can include a second power divider connected between the outputs of each of the four single taps and the output path. The circuit can further include a field-programmable gate array configured to control coefficient control mechanisms, the polarity selection mechanisms, and the time delay elements (when they are variable time delay elements).

Abstract: A positive electrode active material, a positive electrode including the same, and a lithium secondary batter including the same are disclosed herein. In some embodiments, the positive electrode active material includes a lithium transition metal oxide, and a coating layer formed on a surface of the lithium transition metal oxide particle, wherein the coating layer is formed in a film form, and the coating layer includes a carbonized coating polymer and carbide.

Abstract: An air conditioner includes a housing having a suction port and a discharge port, a main fan configured to draw air into the housing through the suction port and discharge air from the housing through the discharge port, an auxiliary fan configured to draw, into the housing, air discharged by the main fan and a controller configured to control a rotational speed of the auxiliary fan to change a direction in which air is discharged from the housing.

Abstract: A semiconductor device includes: first and second channel structures spaced apart from each other in a first direction; and a source/drain pattern, between the first and second channel structures, including a first interface contacting the first channel structure and a second interface contacting the second channel structure, wherein, in a plan view, the source/drain pattern includes first and second side walls opposite to each other in a second direction, the first side wall includes a first sloped side wall, a second sloped side wall, and a first horizontal intersection at which the first and second sloped side walls meet, a width of the first interface is different from a width of the second interface, in the second direction, and a distance from the first interface to the first horizontal intersection is greater than a distance from the second interface to the first horizontal intersection, in the first direction.

Abstract: Provided is a transversal radio frequency filter circuit having a low noise amplifier connected along an input signal path, a first power divider connected between the low noise amplifier and four single taps, and an output path connected to the outputs of each of the four single taps. Each of the four single taps having a coefficient control mechanism, a polarity selection mechanism, and a time delay element. The coefficient control mechanism can include a wideband digital step attenuator configured to support high control range of the coefficient. Additionally, the circuit can include a second power divider connected between the outputs of each of the four single taps and the output path. The circuit can further include a field-programmable gate array configured to control coefficient control mechanisms, the polarity selection mechanisms, and the time delay elements.

Abstract: Disclosed is a recycling apparatus for a cross-linked polyethylene resin using a twin screw extruder. The recycling apparatus for a cross-linked polyethylene resin using a twin screw extruder according to an embodiment of the present disclosure includes: a raw material supply unit configured to supply a raw material that is a cross-linked polyethylene resin; and a twin screw extruder configured to receive the raw material from the raw material supply unit, the twin screw extruder including a cylinder and a twin screw installed inside the cylinder to rotate in the same direction, the twin screw extruder being configured to de-crosslink and recycle the raw material under a de-crosslinking reaction temperature and reaction pressure atmosphere while continuously transporting the raw material along the twin screw by the rotation of the twin screw.

Abstract: A photonic integrated circuit (PIC) structure includes an active region in at least an active layer over a substrate, the active region including a plurality of transistors therein. A plurality of dielectric interconnect layers are over the active region, and an opening is defined through the plurality of dielectric interconnect layers. The opening extends to at least the active layer. A barrier is within the plurality of dielectric interconnect layers and surrounding the opening. An optical element is positioned in the opening. The barrier prevents stress damage, such as cracks and/or delaminations, from propagating from or to the opening, and maintains the hermetic seal of the PIC structure.

Abstract: Embodiments of the disclosure provide a photonic integrated circuit (PIC) structure with a passage for a waveguide through a barrier structure. The PIC structure includes a barrier structure on a substrate, having a first sidewall and a second sidewall opposite the first sidewall. A passage is within the barrier structure, and extends from a first end at the first sidewall of the barrier structure to a second end at the second sidewall of the barrier structure. A shape of the passage includes a reversal segment between the first end and the second end. A waveguide within the passage and extends from the first end to the second end of the barrier structure.

Abstract: A semiconductor fabricating apparatus may include a probe card, a test head, a support and a chamber wall. The probe card may include a plurality of probing needles. The probe card may be installed at the test head. The support may be configured to receive a wafer including a plurality of test pads making contact with the probing needles. The chamber wall may be configured to receive the support. The chamber wall may define a chamber in which a probe test may be performed. At least one of the probe card and the support, the probe card and the test head, and the test head and the chamber wall may be combined with each other by a magnetic module.

Abstract: An overhead hoist transport system includes a vehicle, a wafer box and a controller. The vehicle includes a combiner. The combiner includes at least one magnetic module. The magnetic module is fixed to a base plate. The magnetic module is downwardly protruded. The wafer box includes a header. The header includes a combining member configured to correspond to the magnetic module. The controller is configured to generate a control signal for controlling attachment and detachment operations between the combiner and the wafer box. The magnetic module includes a frame, a first permanent magnet, a second permanent magnet and a magnetic switch. The frame has an annular cross-sectional shape. The first permanent magnet is fixed to the frame. The second permanent magnet is rotatably arranged in the frame. The magnetic switch is configured to rotate the second magnet in response to the control signal.

Abstract: A semiconductor device includes a first fin type pattern on a substrate, a second fin type pattern, parallel to the first fin type pattern, on the substrate, and an epitaxial pattern on the first and second fin type patterns. The epitaxial pattern may include a shared semiconductor pattern on the first fin type pattern and the second fin type pattern. The shared semiconductor pattern may include a first sidewall adjacent to the first fin type pattern and a second sidewall adjacent to the second fin type pattern. The first sidewall may include a first lower facet, a first upper facet on the first lower facet and a first connecting curved surface connecting the first lower and upper facets. The second sidewall may include a second lower facet, a second upper facet on the second lower facet and a second connecting curved surface connecting the second lower and upper facets.

Abstract: Disclosed herein is an air conditioner. The air conditioner includes a housing having an inlet and an outlet, a blade having a plurality of discharge holes and provided to discharge air through the plurality of discharge holes, a first opening formed between one side of the blade near the inlet and the housing when the blade discharges air through the plurality of discharge holes, and a second opening formed between the housing and the other side opposite to the one side of the blade when the blade discharges air through the plurality of discharge holes.

Abstract: A semiconductor device includes a first active pattern having a first lower pattern and a first sheet pattern on the first lower pattern. First gate structures include a first gate electrode. A second active pattern includes a second lower pattern. A second sheet pattern is on the second lower pattern. Second gate structures include a second gate electrode that surrounds the second sheet pattern. A first source/drain recess is between adjacent first gate structures. A second source/drain recess is between adjacent second gate structures. A first source/drain pattern extends along the first source/drain recess. A first silicon germanium filling film is on the first silicon germanium liner. A second source/drain pattern includes a second silicon germanium liner extending along the second source/drain recess. A second silicon germanium filling film is on the second silicon germanium liner.