Abstract: A method for outputting a drawing reference number description regarding a patent drawing reference number according to an embodiment of the present disclosure may include recognizing a size of a patent drawing and a position of a drawing reference number included in the patent drawing and acquiring a relative position coordinate of the drawing reference number in the patent drawing; setting a relative position coordinate of the drawing reference number description corresponding to the drawing reference number based on the acquired relative position coordinate; and outputting the drawing reference number description on the set relative position coordinate, thereby outputting such that the drawing reference number description corresponds to the drawing reference number.

Abstract: Provided is a method of preparing trichlorosilane, more particularly, a method of preparing trichlorosilane which trichlorosilane can be obtained with an improved yield using a catalyst-supported silicon.

Abstract: Provided is a method of preparing trichlorosilane, more particularly, a method of preparing trichlorosilane which trichlorosilane can be obtained with an improved yield using a catalyst-supported silicon.

Abstract: An apparatus for manufacturing polysilicon using a chemical vapor deposition (CVD) reactor is provided. The apparatus for manufacturing polysilicon includes: a reaction chamber including a substrate and a reactor cover; at least a pair of electrodes installed through the substrate by an insulating member and connected with a power supply; at least a pair of filaments which are coupled with the pair of electrodes by an electrode chuck and of which upper ends are connected to each other; and a cover assembly including an electrode cover surrounding an upper surface and a side of each of the pair of electrodes on the substrate and a cover shield covering the upper surface of the electrode cover.

Abstract: This invention relates to a method of preparing trichlorosilane, which enables trichlorosilane to be obtained at improved yield using silicon having copper silicide uniformly formed thereon, by uniformly distributing and applying a copper compound on the surface of silicon and then performing heat treatment.