Patents by Inventor Kyu Han Lee
Kyu Han Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240088432Abstract: An embodiment sulfur dioxide-based inorganic electrolyte is provided in which the sulfur dioxide-based inorganic electrolyte is represented by a chemical formula M·(A1·Cl(4-x)Fx)z·ySO2. In this formula, M is a first element selected from the group consisting of Li, Na, K, Ca, and Mg, A1 is a second element selected from the group consisting of Al, Fe, Ga, and Cu, x satisfies a first equation 0?x?4, y satisfies a second equation 0?y?6, and z satisfies a third equation 1?z?2.Type: ApplicationFiled: April 12, 2023Publication date: March 14, 2024Inventors: Kyu Ju Kwak, Won Keun Kim, Eun Ji Kwon, Samuel Seo, Yeon Jong Oh, Kyoung Han Ryu, Dong Hyun Lee, Han Su Kim, Ji Whan Lee, Seong Hoon Choi, Seung Do Mun
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Publication number: 20170305392Abstract: The present invention relates to a fluid level sensor-attached motor pump for a washer fluid, in which a fluid level sensor for detecting the remaining amount of a washer fluid stored in a washer fluid reservoir and outputting a detection signal is integrally mounted to a motor pump for a washer fluid so that an operator can check the remaining amount of the washer fluid through a dashboard of a vehicle and thus can replenish an insufficient washer fluid, in which the fluid level sensor is integrally mounted to the motor pump for a washer fluid to solve a problem in that the motor pump and the fluid level sensor are separately wiring-connected to the washer fluid reservoir to thereby deteriorate workability of wiring so that workability of wiring can be increased and the wiring can be simplified to reduce a defective proportion, in which the motor pump for a washer fluid and the fluid level sensor are integrally manufactured so that the manufacturing cost can be reduced, and in which the fluid level sensor foType: ApplicationFiled: February 10, 2015Publication date: October 26, 2017Inventor: Kyu Han LEE
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Patent number: 9459286Abstract: A large-area probe card and method of manufacturing the same including an insulation plate including at least one contactor formed thereon, a main substrate disposed below the insulation plate, and a flexible signal connector vertically passing through the insulation plate and disposed between the at least one contactor and the main substrate to electrically connect the at least one contactor with the main substrate.Type: GrantFiled: August 19, 2014Date of Patent: October 4, 2016Assignee: GIGALANE CO., LTD.Inventors: Kyu Han Lee, Hee Seok Jung
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Publication number: 20150054541Abstract: A large-area probe card and method of manufacturing the same including an insulation plate including at least one contactor formed thereon, a main substrate disposed below the insulation plate, and a flexible signal connector vertically passing through the insulation plate and disposed between the at least one contactor and the main substrate to electrically connect the at least one contactor with the main substrate.Type: ApplicationFiled: August 19, 2014Publication date: February 26, 2015Inventors: Kyu Han Lee, Hee Seok Jung
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Patent number: 8901949Abstract: There is provided a probe card comprising a plurality of probe tips, each being ball-shaped or pillar-shaped and having a top end in contact with each of target chip pads to be tested; a first space converting unit; a second space converting unit; a frame configured to support the second space converting unit; an interposer unit; and a circuit board.Type: GrantFiled: June 1, 2012Date of Patent: December 2, 2014Assignee: Gigalane, Co., Ltd.Inventors: Duk Kyu Kwon, Kyu Han Lee, Yong Goo Lee
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Patent number: 8455906Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: GrantFiled: November 1, 2011Date of Patent: June 4, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
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Patent number: 8415708Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.Type: GrantFiled: October 25, 2010Date of Patent: April 9, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Je Won Kim, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
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Publication number: 20120306523Abstract: There is provided a probe card comprising a plurality of probe tips, each being ball-shaped or pillar-shaped and having a top end in contact with each of target chip pads to be tested; a first space converting unit; a second space converting unit; a frame configured to support the second space converting unit; an interposer unit; and a circuit board.Type: ApplicationFiled: June 1, 2012Publication date: December 6, 2012Inventors: Duk Kyu KWON, Kyu Han LEE, Yong Goo LEE
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Patent number: 8258539Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.Type: GrantFiled: July 16, 2010Date of Patent: September 4, 2012Assignee: Samsung LED Co., Ltd.Inventors: Seok Min Hwang, Hyun Kyung Kim, Kun Yoo Ko, Sang Su Hong, Kyu Han Lee, Bok Ki Min
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Publication number: 20120043557Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: ApplicationFiled: November 1, 2011Publication date: February 23, 2012Applicant: SAMSUNG LED CO., LTD.Inventors: Sun Woon KIM, Hyun Kyung KIM, Je Won KIM, In Seok CHOI, Kyu Han LEE, Jeong Tak OH
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Patent number: 8071994Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: GrantFiled: November 23, 2009Date of Patent: December 6, 2011Assignee: Samsung LED Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
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Patent number: 7893443Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.Type: GrantFiled: April 26, 2006Date of Patent: February 22, 2011Assignee: Samsung LED Co,; Ltd.Inventors: Je Won Kim, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
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Publication number: 20110037086Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.Type: ApplicationFiled: October 25, 2010Publication date: February 17, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Je Won KIM, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
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Publication number: 20100276725Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.Type: ApplicationFiled: July 16, 2010Publication date: November 4, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Seok Min HWANG, Hyun Kyung Kim, Kun Yoo Ko, Sang Su Hong, Kyu Han Lee, Bok Ki Min
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Patent number: 7777245Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.Type: GrantFiled: August 7, 2006Date of Patent: August 17, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Seok Min Hwang, Hyun Kyung Kim, Kun Yoo Ko, Sang Su Hong, Kyu Han Lee, Bok Ki Min
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Publication number: 20100112742Abstract: A method of forming a nitride semiconductor device is disclosed. An n-type GaN layer is formed on a substrate. A self assembled nitride semiconductor quantum dot layer is formed on the n-type GaN layer by growing InyGa(1-y)N (0.3?y?1) directly on the n-type GaN layer. A resonance tunnel layer is formed on the n-type GaN layer to cover the nitride semiconductor quantum dot layer. An active layer is formed on the resonance tunnel layer. A p-type nitride semiconductor layer is formed on the active layer. The active layer contains a quantum well layer and a quantum barrier layer, and the resonance tunnel layer has a band gap energy greater than that of the quantum well layer.Type: ApplicationFiled: December 30, 2009Publication date: May 6, 2010Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Kyu Han Lee, Je Won Kim, Dong Joon Kim
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Patent number: 7692201Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: GrantFiled: April 5, 2005Date of Patent: April 6, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
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Publication number: 20100065877Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: ApplicationFiled: November 23, 2009Publication date: March 18, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sun Woon KIM, Hyun Kyung KIM, Je Won KIM, In Seok CHOI, Kyu Han LEE, Jeong Tak OH
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Nitride semiconductor light emitting device having electrostatic discharge (ESD) protection capacity
Patent number: 7173288Abstract: A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.Type: GrantFiled: February 10, 2005Date of Patent: February 6, 2007Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kyu Han Lee, Hyun Kyung Kim, Je Won Kim, Dong Joon Kim -
Patent number: D715742Type: GrantFiled: December 9, 2013Date of Patent: October 21, 2014Assignee: Gigalane Co., Ltd.Inventors: Kyu Han Lee, Hee Seok Jung, Byung June Jun, Ho Sub Bang, Hwang Sub Koo