Abstract: The present invention relates to a security policy and audit log two-way inquiry, collation, and tracking system and method capable of effectively inquiring and confirming various pieces of log information generated due to setting and change of various security policies, and capable of inquiring and confirming a security policy related to log information based on the collected log information. According to the present invention, it is possible to inquire, collate, and track logs generated and recorded by the various security policies, it is possible to inquire, collate, and track the security policy applied to the collected log, and it is possible to inquire, collate, and track the security policy and the log in two ways and in real time.

Abstract: An air circuit breaker is disclosed. The air circuit breaker according to an embodiment of the present disclosure includes a cover magnet unit. The cover magnet unit is directly coupled to an upper cover which forms the outer appearance of the air circuit breaker. The cover magnet unit is positioned adjacent to a fixed contact and forms a magnetic field. Due to the formed magnetic field, an electromagnetic force in a direction toward an arc extinguishing unit is applied to a generated arc. Accordingly, the generated arc may be rapidly moved and extinguished. The cover magnet unit is inserted into a surface of the upper cover and is not exposed to the outside. Therefore, the generated arc is not in contact with the cover magnet unit. As a result, the cover magnet unit is not damaged by the generated arc.

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

Abstract: An ultra-high frequency (UHF) partial discharge detection sensor having a leak-tight structure, includes a flange portion having a through hole formed therein, an electrode rod inserted through the through hole formed in the flange portion, a sensor unit provided at an upper end of the electrode rod to detect partial discharge ultra-high frequency, a sealing member provided between the electrode rod and the flange portion, and a cover member supporting a lower end of the sealing member.

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

Abstract: A capacitor component includes: a plurality of conductive nanowires disposed to be spaced apart from each other; first and second connecting conductive layers respectively disposed on one end and the other end of the plurality of conductive nanowires, and connected to the plurality of conductive nanowires; a conductive body surrounding the plurality of conductive nanowires; and a dielectric film disposed between the plurality of conductive nanowires, each of the first and second connecting conductive layers, and the conductive body.

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: An air circuit breaker is disclosed. An air circuit breaker according to one aspect of the present disclosure includes a cradle and a circuit breaker main body drawn-in and drawn-out to/from the cradle; and further includes: an interlock lever connected to an off button of the circuit breaker main body to move vertically; and a transfer device unit provided on the lower side of the cradle, wherein the transfer device unit can include a key interlock assembly, which is provided to be horizontally movable so that, in a state of having moved toward one side thereof, the movement of the interlock lever is restricted and, in a state of having moved toward the other side thereof, the movement of the interlock lever is permitted.

Abstract: Disclosed are an arc extinguishing unit, a circuit breaking unit, and an air circuit breaker including the same. The present disclosure provides an arc extinguishing unit, a circuit breaking unit, and an air circuit breaker, including: side plates spaced apart from each other and disposed to face each other; a plurality of grids disposed between the side plates, spaced apart from each other, and coupled to the side plates, respectively; and a grid cover located above the grid and covering the grid, wherein the grid includes a grid leg extending downward to surround from both sides a protruding contact disposed to extend upward from a movable contact; and a first protective part formed to surround at least a portion of the grid leg at a lower portion of the grid leg.

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: An arc extinction apparatus according to an embodiment of the present disclosure comprises a chamber unit, a division unit, a filter unit, and a cover unit. A discharge port is formed in the chamber unit such that a fluid in the chamber unit is discharged to the outside. An insertion groove is provided on inner faces of the chamber unit that face each other. The division unit is coupled to the inside of the chamber unit. In addition, the division unit divides a path of the fluid discharged through the discharge port into multiple paths. The filter unit is disposed in the discharge port and filters out at least one predetermined material from the fluid passing through the discharge port. The cover unit comprises a plurality of exhaust pipes and is coupled to the discharge port from the outside of the filter unit.

Abstract: Provided is a novel bacterial strain Bacteroides vulgatus MGM001 (Bacteroides vulgatus MGM001) and its use. The LPS from the strain of the subject matter has cytotoxicity weaker than the conventional ones and shows synergistic effect on the inhibition of biofilm formation when used in combination with LTA.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: The present disclosure relates to a ransomware attack detection device and method, and a recording medium having a program recorded thereon, the program for implementing the method. More particularly, the present disclosure relates to a multiprocess clustering-based ransomware attack detection device and method, and a recording medium having a program recorded thereon, the program being configured to implement the method, wherein a cluster ID for a cluster assigned to processes created at a kernel level of an operating system (OS) is created, processes branched from one parent process information read and written by the processes are clustered for each cluster ID, and a ransomware attack is detected and blocked according to whether the clustered information is changed or damaged.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

Abstract: A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to one embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa which is disposed on the n-type semiconductor layer, comprises an active layer and a p-type semiconductor layer, and has a plurality of via-holes exposing the n-type semiconductor layer; n-ohmic contact layers contacting the n-type semiconductor layer in the via-holes; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-pad metal layer electrically connected to the n-ohmic contact layers; a p-pad metal layer electrically connected to the p-ohmic contact layer; an n-bump electrically connected to the n-pad metal layer; and a p-bump electrically connected to the p-pad metal layer, wherein the p-pad metal layer is formed so as to surround the n-pad metal layer.