Abstract: Provided is a method for areal selective forming of a thin film according to an exemplary embodiment of the present disclosure including: a substrate preparation step of supplying and stabilizing a substrate including a growth area and a non-growth area into a chamber; a precursor supply step of supplying a metal precursor compound into the chamber and adsorbing the metal precursor compound to the substrate; a purge step of purging the inside of the chamber; and a thin film formation step of supplying a reaction material into the chamber to react with the metal precursor compound and form a thin film, in which the metal precursor compound is a Group 5 metal precursor compound represented by Chemical Formula 1 below:

Abstract: Provided is an apparatus and method for encoding/decoding a moving picture based on adaptive scanning. The moving picture apparatus and method can increase a compression rate based on adaptive scanning by performing intra prediction onto blocks of a predetermined size, and scanning coefficients acquired from Discrete Cosine Transform (DCT) of a residue signal and quantization differently according to the intra prediction mode. The moving picture encoding apparatus includes: a mode selector for selecting and outputting a prediction mode; a predictor for predicting pixel values of pixels to be encoded of an input video based on the prediction mode to thereby output a residue signal block; a transform/quantization unit for performing DCT onto the residue signal block and quantizing the transformed residue signal block; and an encoder for adaptively scanning and encoding the quantized residue signal block based on the prediction mode.

Abstract: Proposed is a connection tube support of a waste heat recovery boiler supporting a connection tube unit having a plurality of connection tubes that is disposed inside a waste heat recovery boiler and perform heat exchange between a fluid flowing inside and exhaust gas flowing outside, wherein the connection tube support includes a header storing fluid flowing through the connection tube unit and supporting one end of the connection tube unit by being connected to one end of the connection tube unit, and a tube sheet supporting a circumferential surface of each of the plurality of connection tubes, wherein the tube sheet has the plurality of connection tubes having been passed therethrough and is provided with a plurality of support holes respectively supporting circumferential surfaces of the plurality of connection tubes having been passed therethrough.

Abstract: A capacitor component includes: a plurality of conductive nanowires disposed to be spaced apart from each other; first and second connecting conductive layers respectively disposed on one end and the other end of the plurality of conductive nanowires, and connected to the plurality of conductive nanowires; a conductive body surrounding the plurality of conductive nanowires; and a dielectric film disposed between the plurality of conductive nanowires, each of the first and second connecting conductive layers, and the conductive body.

Abstract: A package for semiconductor is disclosed. The semiconductor package according to an aspect of the present invention may include a semiconductor chip; a first insulating layer for embedding the semiconductor chip and protecting the semiconductor chip; a redistribution layer disposed on the first insulating layer; a second insulating layer disposed on the first insulating layer and for embedding the redistribution layer and protecting the redistribution layer; and a conductive pad disposed on the second insulating layer.

Abstract: A memory device and operating method of the memory device are provided. The memory device comprises a memory cell storing data based on a first voltage, a row decoder selecting a wordline of the memory cell based on the first voltage, and a wordline predecoder configured to generate a “predec” signal, which is for generating a wordline voltage to be provided to the row decoder. The wordline predecoder is driven by the first voltage and a second voltage, which is different from the first voltage, receives a row address signal, associated with selecting the wordline, and an internal clock signal associated with adjusting operating timings of elements included in the memory device. The wordline predecoder performs a NAND operation on the row address signal and the internal clock signal, and provides the “predec” signal generated based on a result of the NAND operation to the row decoder.

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

Abstract: A wafer transfer apparatus includes a plate, a first belt unit on a first surface of the plate and including a first linear motion (LM) guide movable up and down, a second belt unit on the first surface of the plate and including a second LM guide movable up and down, a robot between the first belt unit and the second belt unit connected to the first LM guide and the second LM guide, and configured to transfer a wafer in a vertical direction, and a buffer unit between the first belt unit and the second belt unit in a first direction and disposed between the plate and the robot in a second direction perpendicular to the first direction, wherein the buffer unit includes a plurality of centrifugal fans configured to discharge fluid from an inner space of the buffer unit to an outside of the buffer unit.

Abstract: Disclosed is a method of manufacturing a blank for hot stamping, which includes forming a plated layer on a steel plate by immersing the steel plate in a plating bath including aluminum and silicon; and heating the steel plate on which the plated layer is formed at a first temperature for a first time period.

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: An air circuit breaker is disclosed. An air circuit breaker according to one aspect of the present disclosure includes a cradle and a circuit breaker main body drawn-in and drawn-out to/from the cradle; and further includes: an interlock lever connected to an off button of the circuit breaker main body to move vertically; and a transfer device unit provided on the lower side of the cradle, wherein the transfer device unit can include a key interlock assembly, which is provided to be horizontally movable so that, in a state of having moved toward one side thereof, the movement of the interlock lever is restricted and, in a state of having moved toward the other side thereof, the movement of the interlock lever is permitted.

Abstract: Disclosed are an arc extinguishing unit, a circuit breaking unit, and an air circuit breaker including the same. The present disclosure provides an arc extinguishing unit, a circuit breaking unit, and an air circuit breaker, including: side plates spaced apart from each other and disposed to face each other; a plurality of grids disposed between the side plates, spaced apart from each other, and coupled to the side plates, respectively; and a grid cover located above the grid and covering the grid, wherein the grid includes a grid leg extending downward to surround from both sides a protruding contact disposed to extend upward from a movable contact; and a first protective part formed to surround at least a portion of the grid leg at a lower portion of the grid leg.

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: Provided is a novel bacterial strain Bacteroides vulgatus MGM001 (Bacteroides vulgatus MGM001) and its use. The LPS from the strain of the subject matter has cytotoxicity weaker than the conventional ones and shows synergistic effect on the inhibition of biofilm formation when used in combination with LTA.

Abstract: An arc extinction apparatus according to an embodiment of the present disclosure comprises a chamber unit, a division unit, a filter unit, and a cover unit. A discharge port is formed in the chamber unit such that a fluid in the chamber unit is discharged to the outside. An insertion groove is provided on inner faces of the chamber unit that face each other. The division unit is coupled to the inside of the chamber unit. In addition, the division unit divides a path of the fluid discharged through the discharge port into multiple paths. The filter unit is disposed in the discharge port and filters out at least one predetermined material from the fluid passing through the discharge port. The cover unit comprises a plurality of exhaust pipes and is coupled to the discharge port from the outside of the filter unit.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: The present disclosure relates to a ransomware attack detection device and method, and a recording medium having a program recorded thereon, the program for implementing the method. More particularly, the present disclosure relates to a multiprocess clustering-based ransomware attack detection device and method, and a recording medium having a program recorded thereon, the program being configured to implement the method, wherein a cluster ID for a cluster assigned to processes created at a kernel level of an operating system (OS) is created, processes branched from one parent process information read and written by the processes are clustered for each cluster ID, and a ransomware attack is detected and blocked according to whether the clustered information is changed or damaged.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to one embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa which is disposed on the n-type semiconductor layer, comprises an active layer and a p-type semiconductor layer, and has a plurality of via-holes exposing the n-type semiconductor layer; n-ohmic contact layers contacting the n-type semiconductor layer in the via-holes; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-pad metal layer electrically connected to the n-ohmic contact layers; a p-pad metal layer electrically connected to the p-ohmic contact layer; an n-bump electrically connected to the n-pad metal layer; and a p-bump electrically connected to the p-pad metal layer, wherein the p-pad metal layer is formed so as to surround the n-pad metal layer.

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.