Abstract: In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.

Abstract: In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.

Abstract: In a method of detecting a defect of the pattern in a semiconductor device, the pattern to be inspected is formed on a substrate, and then a thin film is continuously formed on the pattern, the defect of the pattern and the substrate to accurately detect the defect. The thin film has a reflectivity substantially greater than that of the pattern. The defect of the pattern is detected by inspecting the substrate having the thin film covering the pattern and the defect. A minute defect of the pattern such as residues or a micro bridge may be readily detected.

Abstract: In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.

Abstract: Borophosphosilicate glass (BPSG) films having impurity concentrations which remain stable over time are fabricated by removing moisture from a BPSG film and forming a shield film on the BPSG film to reduce reintroduction of moisture into the BPSG film. Moisture is removed from the BPSG film by annealing the BPSG film. The BPSG film may be used to test impurity concentrations in BPSG films of microelectronic devices. The BPSG films may also be used in the manufacture of microelectronic devices.