Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.

Abstract: A semiconductor manufacturing equipment may include a process chamber for treating a substrate; a front-end module including a first transfer robot, wherein the first transfer robot may be configured to transport the substrate received in a container; a transfer chamber between the front-end module and the process chamber, wherein the transfer chamber may be configured to load or unload the substrate into or out of the process chamber; and a cassette capable of receiving a replaceable component capable of being used in the process chamber. The front-end module may include a seat plate configured to move in a sliding manner so as to retract or extend into or from the front-end module. The cassette may be configured to be loaded into the front-end module while the cassette is seated on the seat plate.

Abstract: A transfer apparatus installed in a transfer chamber of substrate processing equipment can be precisely calibrated with respect to a substrate support of a process chamber. Also, the calibration can be performed while a vacuum pressure is maintained in the transfer chamber. The tool for calibrating the transfer apparatus includes a base plate and a light source mounted to the base plate. The base plate is mounted to the process chamber, and the light source is positioned and oriented to direct a beam of light onto a reference mark on the substrate support. Then, an end effecter of the transfer apparatus is moved to a transfer position over the substrate support. The end effecter has a reference hole that is aligned with the reference mark when the end effecter is in a centered state relative to the substrate support. The beam of light is used to determine whether the reference hole is aligned with the reference mark.