Abstract: A semiconductor device includes a substrate including an active pattern, a first interlayer dielectric layer on the substrate, the first interlayer dielectric layer including a recess on an upper portion thereof, and a lower connection line in the first interlayer dielectric layer, the lower connection line being electrically connected to the active pattern, and the lower connection line including a conductive pattern, the recess of the first interlayer dielectric layer selectively exposing a top surface of the conductive pattern, and a barrier pattern between the conductive pattern and the first interlayer dielectric layer, the first interlayer dielectric layer covering a top surface of the barrier pattern.

Abstract: A composition for preventing and/or treating cytokine release syndrome and a method of prevention and/or treatment of cytokine release syndrome are disclosed. The composition includes an aryl ethene compound, a pharmaceutically acceptable salt thereof, or a solvate thereof, as an active ingredient. The method includes administering the aryl ethene compound, an isomer, a pharmaceutically acceptable salt thereof, or a solvate thereof, in an effective amount to a subject in need thereof. The cytokine release syndrome may be caused by virulent infection. The administration of the compound reduces the pre-inflammatory cytokine levels in the subject.

Abstract: A battery module includes a sub module including a cell stack having a plurality of battery cells and a pair of bus bar frames respectively coupled to one side and the other side of the cell stack; a module housing configured to accommodate the sub module and configured to have an air inlet and an air outlet formed to circulate air; a sprinkler provided through the module housing at one side of the cell stack in a stacking direction; and an outlet closing device configured to move by a buoyancy generated by a cooling water introduced into the module housing through the sprinkler so that the air outlet is closed.

Abstract: A display device including a light emitting diode, a driving transistor, a second transistor, a third transistor, a fourth transistor, and a current blocking transistor. The current blocking transistor is a transistor of a different type from the driving transistor, and in case that a voltage of a gate electrode of the driving transistor is maintained at an initialization voltage, the current blocking transistor is turned off during a light emitting period to not transmit the light emitting current outputted by the driving transistor to an anode of the light emitting diode.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: A display device includes a substrate including a display area and a non-display area disposed near the display area, a plurality of pixels disposed in the display area, a plurality of signal lines disposed on the substrate and connected to the pixels, and a pad portion disposed in the non-display area and including a plurality of pads. The signal lines include a first crack detecting line connected to a first test voltage pad and a first pad at a first node, connected to a second pad at a second node, and extending around the non-display area between the first node and the second node, as well as a first data line including a first end connected to a first transistor connected to the first crack detecting line at the second node, and a second end connected to corresponding pixels from among the plurality of pixels.

Abstract: Disclosed is an in-memory device for operation of a multi-bit weight. A multi-bit memory cell array according to an exemplary embodiment of the present invention includes at least one multi-bit unit which stores input data based on an input signal and outputs a per-group sum value summed for every group by applying a multi-bit weight to the stored input data; and a final summation unit which is connected to at least one multi-bit unit, adjusts a ratio for every group to receive the peer-group sum value, and outputs a final output value by summing the input per-group sum value.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A portable hair printer includes a communication module, a printer module that performs a printing operation, a memory that stores a program for printing an image on a surface of a bundle of hairs, and a processor that executes the program, wherein the program is executed by the processor, receives an image to be dyed on the bundle of hairs from the user terminal through the communication module, and transmits the received image to the printer module to perform an image printing operation for the bundle of hairs, and the portable hair printer further comprises a housing having the communication module, the printer module, the memory, and the processor embedded therein, and the housing includes an upper housing and a lower housing hinged to each other around a hinge.

Abstract: Provided is a method of preparing a superabsorbent polymer. More particularly, provided is a method of preparing a superabsorbent polymer, in which variations in centrifugal retention capacity of superabsorbent polymer particles to be prepared are reduced by controlling heat treatment temperature conditions in a surface crosslinking step, thereby improving absorption properties of the superabsorbent polymer finally prepared.

Abstract: A coil member according to an embodiment comprises: a substrate comprising a first surface and a second surface opposite to the first surface, and comprising a hole; a circuit pattern that is disposed on at least one of the first surface and the second surface and comprises a wiring pattern, a plating pattern, and a dummy pattern; and a protective layer that is disposed on the substrate and surrounds the circuit pattern, wherein the protective layer comprises a first protective layer disposed on the first surface and a second protective layer disposed on the second surface, the substrate comprises a first edge disposed on the outer edge of the substrate and a second edge surrounding the hole, and the substrate comprises a 1-1 region adjacent to the first edge, and a 1-2 region, wherein the 1-1 region is disposed between the first edge and the 1-2 region, a 1-1 protective layer is disposed on a first surface of the 1-1 region, a 1-2 protective layer is disposed on a first surface of the 1-2 region, and the thi

Abstract: A pixel includes an organic light emitting diode (OLED), a pixel circuit, and first and second transistors. The OLD includes a cathode electrode connected to a second power source. The pixel circuit includes a driving transistor having a gate electrode initialized by a third power source. The driving transistor controls the amount of current flowing from a first power source to the second power source via the OLED. The first transistor is connected between a fourth power source and the second power source and an anode electrode of the OLED. The first transistor is turned on based on a scan signal is supplied to a scan line. The second transistor is connected between a data line and the pixel circuit. The second transistor is turned on when the scan signal is supplied to the ith scan line.

Abstract: Provided is a method of preparing a superabsorbent polymer. More specifically, provided is a method of preparing a superabsorbent polymer capable of exhibiting improved initial absorbency and a rapid absorption rate by polymerizing monomers having acidic groups, of which part is neutralized with a basic material including potassium hydroxide, in the presence of an encapsulated foaming agent.

Abstract: The inventive concept relates to an apparatus for treating a substrate. In an embodiment, the apparatus includes a process chamber having a process space in which the substrate is treated with a fluid in a supercritical state, a support unit that supports the substrate in the process space, a fluid supply unit that supplies the fluid into the process space, a filler member disposed to face the substrate placed on the support unit in the process space, and a measurement unit that measures a state in the process space, the measurement unit being provided in the filler member.

Abstract: A method for controlling autonomous lane change of a moving body is disclosed. The method includes calculating a driving route from a current location of the moving body to a destination; determining whether an intersection or a forked road exists at a predetermined distance from the current location of the moving body on the calculated driving route; checking, when the intersection or the forked road exists, link information corresponding to a lane in which the moving body is located, and determining a moving direction toward the intersection or the forked road; determining an entry route for entering the intersection or the forked road according to the determined moving direction; and generating a control signal for controlling a moving direction of the moving body according to the determined entry route.

Abstract: A semiconductor package includes a connection structure including a redistribution layer, a plurality of under bump metal layers electrically connected to the redistribution layer, a passivation layer which overlaps at least portions of side faces of the plurality of under bump metal layers, and includes a first trench disposed between under bump metal layers adjacent to each other, a surface mounting element which is on the under bump metal layers adjacent to each other, connected to the redistribution layer, and overlaps the first trench, and an underfill material layer that is between a portion of the passivation layer and the surface mounting element, and is in the first trench. The first trench extends in a first direction and includes a first sub-trench having a first width in a second direction, and a second sub-trench having a second width different from the first width in the second direction.

Abstract: Disclosed are compositions and methods relating to variant alpha-amylases. The variant alpha-amylases are useful, for example, for starch liquefaction and saccharification, for cleaning starchy stains in laundry, dishwashing, and other applications, for textile processing (e.g., desizing), in animal feed for improving digestibility, and for baking and brewing.

Abstract: Provided is a cluster node recommendation system. A method of controlling the cluster node recommendation system includes: inputting user selection information from a user, the user selection information including at least one of a cloud vendor, an Information Technology (IT) resource size, and a free resource size; checking resource requirements of a designated application; outputting a node configuration by inputting the input user selection information and the checked resource requirements of the application to an artificial intelligence module; verifying validity by arranging a container in which the application is executed, in the output node configuration; and providing a final node configuration in which validity verification is made, to the user.

Abstract: Provided is a display device comprising a substrate including a pixel area and a non-pixel area adjacent to the pixel area, an inorganic layer disposed on the substrate and having a through hole overlapping the non-pixel area, a light emitting element disposed in the pixel area on the inorganic layer, and an organic layer filing the through hole and having an upper surface positioned at substantially a same level as an upper surface of the inorganic insulating layer based on a surface of the substrate.