Patents by Inventor Kyu-man CHA

Kyu-man CHA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit device and method of manufacturing the same
    Patent number: 9922979
    Abstract: An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: March 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-yup Chung, Jong-shik Yoon, Hwa-sung Rhee, Hee-don Jeong, Je-Min Yoo, Kyu-man Cha, Jong-mil Youn, Hyun-jo Kim
  • INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160284706
    Abstract: An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.
    Type: Application
    Filed: February 3, 2016
    Publication date: September 29, 2016
    Inventors: Jae-yup CHUNG, Jong-shik YOON, Hwa-sung RHEE, Hee-don JEONG, Je-Min YOO, Kyu-man CHA, Jong-mil YOUN, Hyun-jo KIM