Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: The present disclosure relates to a method for carrying out dose delivery quality assurance for high-precision radiation treatment, in which parameters affecting a pass rate of dose delivery quality assurance can be derived through regression analysis, which is a known statistical analysis method, and a pass rate prediction model capable of predicting each parameter and the pass rate of dose delivery quality assurance can be derived, and accordingly, it can be predicted in advance whether dose delivery quality assurance will be passed according to the parameters through the above prediction model, without repeatedly carrying out dose delivery quality assurance according to a patient's treatment plan, and as a result, the efficiency of dose delivery quality assurance can be enhanced, and the time or capacity required for such quality assurance is reduced, such that radiation treatment for an actual patient can be quickly and precisely carried out.

Abstract: A connection member includes a first region, a second region, and a third region, where a number of conductive layers in the second region is greater than a number of conductive layers in the first region and is greater than a number of conductive layers in the third region, a first layer, which is an uppermost layer of the second region, extends to the third region, a second layer, which is a lowermost layer of the third region, extends to the second region, and a side portion of the second region at a boundary between the second region and the third region is covered by the first layer and the second layer.

Abstract: A connection member includes a first region, a second region, and a third region, where a number of conductive layers in the second region is greater than a number of conductive layers in the first region and is greater than a number of conductive layers in the third region, a first layer, which is an uppermost layer of the second region, extends to the third region, a second layer, which is a lowermost layer of the third region, extends to the second region, and a side portion of the second region at a boundary between the second region and the third region is covered by the first layer and the second layer.

Abstract: An electronic device package includes: a substrate including a central region, and a first side region and a second side region at opposite sides of the central region; a first component in the first side region or the second side region, the first component having a first height above a surface of the substrate; a second component in the central region, the second component having a second height above the surface of the substrate that is lower than the first height; a reinforcement member in the central region and overlapping the second component, the reinforcement member having a third height above the surface of the substrate that is lower than the first height and higher than the second height; and an encapsulation member covering the first component and the second component.

Abstract: A connection member includes a first region, a second region, and a third region, where a number of conductive layers in the second region is greater than a number of conductive layers in the first region and is greater than a number of conductive layers in the third region, a first layer, which is an uppermost layer of the second region, extends to the third region, a second layer, which is a lowermost layer of the third region, extends to the second region, and a side portion of the second region at a boundary between the second region and the third region is covered by the first layer and the second layer.

Abstract: An electronic device package includes: a substrate including a central region, and a first side region and a second side region at opposite sides of the central region; a first component in the first side region or the second side region, the first component having a first height above a surface of the substrate; a second component in the central region, the second component having a second height above the surface of the substrate that is lower than the first height; a reinforcement member in the central region and overlapping the second component, the reinforcement member having a third height above the surface of the substrate that is lower than the first height and higher than the second height; and an encapsulation member covering the first component and the second component.

Abstract: The present invention relates to an induced pluripotent stem cell (iPS) model for cardiofaciocutaneous (CFC) syndrome, a method for producing the model, and uses of the iPS model in the analysis of neural development in CFC syndrome. Specifically, the CFC syndrome-derived iPS and generation and differentiation of an embryonic body were induced from the fibroblasts of a CFC syndrome patient, and the CFC syndrome-derived iPS and embryonic body were confirmed to exhibit broken embryonic body shapes and no differentiation into neurons. When a CFC syndrome-derived embryonic body was induced by treating with p-ERK and p-SMAD1 inhibitors, the embryonic body exhibited a normal embryonic body shape and effectively differentiated into neurons. Thus, the CFC syndrome patient-derived stem cell model of the invention can be effectively used in the research for neural development in cardiofaciocutaneous syndrome.

Abstract: The present invention relates to an induced pluripotent stem cell (iPS) model for cardiofaciocutaneous (CFC) syndrome, a method for producing the model, and uses of the iPS model in the analysis of neural development in CFC syndrome. Specifically, the CFC syndrome-derived iPS and generation and differentiation of an embryonic body were induced from the fibroblasts of a CFC syndrome patient, and the CFC syndrome-derived iPS and embryonic body were confirmed to exhibit broken embryonic body shapes and no differentiation into neurons. When a CFC syndrome-derived embryonic body was induced by treating with p-ERK and p-SMAD1 inhibitors, the embryonic body exhibited a normal embryonic body shape and effectively differentiated into neurons. Thus, the CFC syndrome patient-derived stem cell model of the invention can be effectively used in the research for neural development in cardiofaciocutaneous syndrome.