Abstract: A semiconductor device includes a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern and second sheet patterns, a height of the second lower pattern being smaller than a height of the first lower pattern; a first gate structure on the first lower pattern; a second gate structure on the second lower pattern; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a width of an upper surface of the first lower pattern is different from a width of an upper surface of the second lower pattern, and wherein a number of first sheet patterns is different from a number of second sheet patterns.

Abstract: A semiconductor device includes first and second sheet patterns spaced apart from each other on a first region of the substrate, a first gate electrode extending between the first and second sheet patterns, third and fourth sheet patterns spaced apart from each other on a second region of the substrate, and a second gate electrode extending between the third and fourth sheet patterns. The first gate electrode includes a first work function controlling film, which is between the first and second sheet patterns, and a first filling conductive film on the first work function controlling film. The second gate electrode includes a second work function controlling film, which is between the third and fourth sheet patterns, and a second filling conductive film on the second work function controlling film. A distance between the third and fourth sheet patterns is greater than a distance between the first and second sheet patterns.

Abstract: A method of manufacturing a semiconductor device includes: forming first to third preliminary active patterns on a substrate to have different intervals therebetween, forming first and second field insulating layers between the first and second preliminary active patterns and between the second and third preliminary active patterns, respectively, and forming first to third gate electrodes respectively on first to third active patterns formed based on the first to third preliminary active patterns, separated by first and second gate isolation structures.

Abstract: Provided is a phantom device having an internal organ simulating phantom. The phantom device comprises: a phantom receiving radiation emitted from a radiation emitting unit and comprising therein a simulant that simulates an internal organ; a lifting unit installed under the phantom to support the phantom and moving the phantom relative to the radiation emitting unit, the lifting unit comprising: a worm shaft axially rotated by an external torque and having a worm formed on an outer circumferential surface thereof, a cylindrical worm wheel having gear grooves formed on an outer circumferential surface thereof to engage with the worm and a female screw formed on an inner circumferential surface thereof, and rotated by the axial rotation of the worm shaft; and a driven screw engaging with the female screw of the worm wheel, and moved up and down by the rotation of the worm wheel to move up and down the phantom; and a horizontal moving unit interlocking with the lifting unit and horizontally moving the phantom.

Abstract: Provided is a phantom device having an internal organ simulating phantom. The phantom device comprises: a phantom receiving radiation emitted from a radiation emitting unit and comprising therein a simulant that simulates an internal organ; a lifting unit installed under the phantom to support the phantom and moving the phantom relative to the radiation emitting unit, the lifting unit comprising: a worm shaft axially rotated by an external torque and having a worm formed on an outer circumferential surface thereof, a cylindrical worm wheel having gear grooves formed on an outer circumferential surface thereof to engage with the worm and a female screw formed on an inner circumferential surface thereof, and rotated by the axial rotation of the worm shaft; and a driven screw engaging with the female screw of the worm wheel, and moved up and down by the rotation of the worm wheel to move up and down the phantom; and a horizontal moving unit interlocking with the lifting unit and horizontally moving the phantom.