Patents by Inventor Kyu-Chul Chong

Kyu-Chul Chong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6127707
    Abstract: A semiconductor device and a fabricating method thereof are provided. In the semiconductor device, active regions of first and second conductivity types are formed on a semiconductor substrate, apart from each other by a predetermined distance, and a silicide layer is formed on the active regions, for connecting the active regions to one another. By forming an offset area between active regions or gates of opposite conductivity types to space them from each other by a predetermined distance, there exists no area having an increased dopant concentration and a reliable silicidation is ensured.
    Type: Grant
    Filed: December 30, 1998
    Date of Patent: October 3, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-Chul Chong, Heon-Jong Shin