Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.

Abstract: A chilled beam with a bipolar ion generator located in the plenum. Conditioned air flows into the plenum through an air inlet. The plenum is pressurized by the primary air delivered from the HVAC system. The conditioned air exits the plenum through nozzles into a mixing chamber. The increased velocity of the conditioned air exiting through the nozzles induces return air through return an air inlet, past a heating/cooling coil, and into the mixing chamber. The conditioned air and the return air mix in the mixing chamber to create supply air that exits the chilled beam through supply air outlets. The electrodes of the bipolar ion generator are positioned at different locations in the plenum and are oriented in different directions to the direction of the conditioned air flowing into the plenum.

Abstract: A method for fabricating a probe for a scanning probe microscope, wherein the probe includes a mounting block, a cantilever and a tip, includes the steps of: forming a first mask to define a pattern for the tip and a second mask to define a pattern for the cantilever on an SOI wafer having a handle layer containing {100} single-crystalline silicon, an insulating layer and a device layer containing {111} single-crystalline silicon; etching the device layer by using the first and the second masks; forming a sidewall passivation layer on the device layer; etching the device layer by using the first mask to form the tip; etching the handle layer by using a third mask to define a pattern for the mounting block. By using the method, a probe made of {111} single-crystalline silicon can be fabricated with high yield.

Abstract: There is provided a micro piezoelectric actuator, an optical switching device including the micro piezoelectric actuator and a method for fabricating the same. The optical switching device includes a mirror, a first actuator for adjusting the tilt angle of the mirror on the X axis, a second actuator for adjusting the tilt angles of the mirror and the first actuator on the Y axis and a driving substrate for applying a driving signal to the first and second actuators. Each of the actuators has membranes, a piezoelectric device formed on each of the membranes and a connecting part having two elastic bodies coupled to the membranes and a connecting member coupled between the two elastic bodies. In this way, the optical switching device can tilt the mirror on the X axis independently from the tilting thereof on the Y axis.

Abstract: There is provided a micro piezoelectric actuator, an optical switching device including the micro piezoelectric actuator and a method for fabricating the same. The optical switching device includes a mirror, a first actuator for adjusting the tilt angle of the mirror on the X axis, a second actuator for adjusting the tilt angles of the mirror and the first actuator on the Y axis and a driving substrate for applying a driving signal to the first and second actuators. Each of the actuators has membranes, a piezoelectric device formed on each of the membranes and a connecting part having two elastic bodies coupled to the membranes and a connecting member coupled between the two elastic bodies. In this way, the optical switching device can tilt the mirror on the X axis independently from the tilting thereof on the Y axis.

Abstract: An atomic force microscope (AFM) capable of observing the topography of a sample surface at high speed with a high resolution under the atmospheric pressure and a driving method therefor is provided. The AFM comprises a light beam source unit, a light beam scanner, a scanning probe unit (or matrix), a light beam detection unit, a driving control unit and a display unit. The driving method comprises the steps of vibrating, responsive to a reference signal, a first actuator provided on each of scanning probes; detecting a deflection amount of a cantilever provided with a tip at its free end; and transmitting a servo signal to a second actuator based on the deflection amount of the cantilever.

Abstract: A method for manufacturing a thin film AMA is disclosed. The second sacrificial layer is formed by using amorphous silicon, poly silicon or a material having fluidity and the first sacrificial layer is formed by using amorphous silicon or poly silicon. The light efficiency is enhanced by the reflecting member having an even surface after the first and the second sacrificial layers are formed in order to have even surfaces. In addition, the active matrix, the active layer and the reflecting member have no damages because the second sacrificial layer is removed by using the oxygen plasma or the vapor of bromine fluoride or xenon fluoride and the first sacrificial layer is removed by using the vapor of bromine fluoride or xenon fluoride.

Abstract: Thin film AMA and method for manufacturing the thin film AMA are disclosed. The thin film AMA has an active matrix, a supporting member, actuating parts, a reflecting member, and a flatness enhancing member. The flatness enhancing member such as the stress balancing layer or the stiffening member is formed beneath the reflecting member in order to enhance the flatness of the reflecting member without a bending of the reflecting member. Therefore, the reflecting member can have the level surface by the flatness enhancing member though the deformation stress such as residual stress is generated in the reflecting member during forming the reflecting member, so the light efficiency is enhanced and the quality of the picture projected onto the screen is increased.

Abstract: Thin film AMA is disclosed. The thin film AMA has an active matrix, a supporting member, actuating parts and a reflecting member. The supporting member has a supporting line, a rectangular ring-shaped supporting layer, anchors. Insulating members are formed from top electrodes to the supporting layer. The anchors supporting the actuating parts are formed perpendicular to the actuating parts. The initial tiltings of the actuating parts are prevented because the stress concentration line doesn't generated. Therefore, the desired reflection angle of the reflecting member may be regular, so the light efficiency is enhanced and the quality of the picture projected onto the screen is increased. Also, the electrical shorts generated between the top electrodes and the bottom electrodes may be prevented by the insulating members, so point defects of pixels are effectively decreased.

Abstract: Thin film AMA in an optical projection system and a method for manufacturing the same are disclosed. The thin film AMA has a substrate having an electrical wiring and a connecting terminal, an actuator formed on the substrate, and a supporting element for supporting the actuator and for preventing an initial deflection of the actuator. The actuator has a bottom electrode, an active layer, a top electrode. The supporting element has a supporting layer attached beneath the bottom electrode for supporting the actuator, a supporting member for supporting the actuator, the supporting member being formed between the substrate where the connecting terminal is formed and a bottom of a first portion of the supporting layer, and a secondary supporting member for preventing an initial deflection of the actuator, the secondary supporting member being formed between the substrate and a bottom of a second portion of the supporting layer.