Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: Discussed are a light-emitting device and a light-emitting display device having improved efficiency and increased lifespan. A plurality of stacks is provided between an anode and a cathode for at least a subpixel to emit a predetermined color, and emissive layers in different stacks include the same color-based materials having different luminous properties.

Abstract: The present invention relates to a peptide with anti-inflammatory activity, wherein the peptide comprises SEQ ID NO: 1, the peptide has above 80% homology of amino acid sequence with above-mentioned sequence, or the peptide is the fragment of the above-mentioned peptides. The present invention also relates to an inflammatory composition comprising the above mentioned peptides. According to the present invention, a peptide comprising a sequence of SEQ ID NO: 1 has an outstanding efficacy in both suppressing inflammation and in prophylactic means. Therefore, the composition comprising the peptide of this invention can be used as anti-inflammatory pharmaceutical composition or as cosmetic composition, in turn, treating and preventing a variety of different types of inflammatory diseases.

Abstract: A pseudo dual port memory device in which an operating speed is improved and stability is increased is provided. The pseudo dual port memory device may include a memory cell, a pair of bit lines connected to the memory cell, a write driver, a sense amp, and a column multiplexer which is connected to the bit lines, receives a write multiplexer control signal and a read multiplexer control signal, connects the bit lines to the write driver in response to the write multiplexer control signal, and connects the bit lines to the sense amp in response to the read multiplexer control signal. A precharge control signal generation circuit which is connected to the column multiplexer may generate a precharge control signal on the basis of the read and write multiplexer control signals, and a bit line precharge circuit may precharge the bit lines based on the precharge control signal.

Abstract: Disclosed is a hot-stamping component, which includes a base steel plate; and a plated layer on the base steel plate and including a first layer, a second layer, and an intermetallic compound portion having an island shape in the second layer, wherein the first layer and the second layer are sequentially stacked, and an area fraction of the intermetallic compound portion with respect to the second layer is an amount of 20% to 60%.

Abstract: An arc extinction apparatus according to an embodiment of the present disclosure comprises a chamber unit, a division unit, a filter unit, and a cover unit. A discharge port is formed in the chamber unit such that a fluid in the chamber unit is discharged to the outside. An insertion groove is provided on inner faces of the chamber unit that face each other. The division unit is coupled to the inside of the chamber unit. In addition, the division unit divides a path of the fluid discharged through the discharge port into multiple paths. The filter unit is disposed in the discharge port and filters out at least one predetermined material from the fluid passing through the discharge port. The cover unit comprises a plurality of exhaust pipes and is coupled to the discharge port from the outside of the filter unit.

Abstract: Provided is a novel bacterial strain Bacteroides vulgatus MGM001 (Bacteroides vulgatus MGM001) and its use. The LPS from the strain of the subject matter has cytotoxicity weaker than the conventional ones and shows synergistic effect on the inhibition of biofilm formation when used in combination with LTA.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: The present disclosure relates to a ransomware attack detection device and method, and a recording medium having a program recorded thereon, the program for implementing the method. More particularly, the present disclosure relates to a multiprocess clustering-based ransomware attack detection device and method, and a recording medium having a program recorded thereon, the program being configured to implement the method, wherein a cluster ID for a cluster assigned to processes created at a kernel level of an operating system (OS) is created, processes branched from one parent process information read and written by the processes are clustered for each cluster ID, and a ransomware attack is detected and blocked according to whether the clustered information is changed or damaged.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to one embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa which is disposed on the n-type semiconductor layer, comprises an active layer and a p-type semiconductor layer, and has a plurality of via-holes exposing the n-type semiconductor layer; n-ohmic contact layers contacting the n-type semiconductor layer in the via-holes; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-pad metal layer electrically connected to the n-ohmic contact layers; a p-pad metal layer electrically connected to the p-ohmic contact layer; an n-bump electrically connected to the n-pad metal layer; and a p-bump electrically connected to the p-pad metal layer, wherein the p-pad metal layer is formed so as to surround the n-pad metal layer.

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

Abstract: Provided is a banknote sorter. A light source unit obliquely illuminates light at a designated angle onto a surface of a banknote when the banknote is being transferred through the banknote sorter by a driving means. A light sensor unit is placed to sense the light that is irradiated at the designated angle onto the surface of the banknote and/or tape, reflected from the surface of the banknote and/or the tape, and is incident onto the light sensor unit at an angle different from the designated angle. A control unit controls the light source unit, processes sensing information from the light sensor unit, and discriminates any tape on the banknote.

Abstract: An air circuit breaker is disclosed. The air circuit breaker according to an embodiment of the present disclosure includes a cover magnet unit. The cover magnet unit is directly coupled to an upper cover which forms the outer appearance of the air circuit breaker. The cover magnet unit is positioned adjacent to a fixed contact and forms a magnetic field. Due to the formed magnetic field, an electromagnetic force in a direction toward an arc extinguishing unit is applied to a generated arc. Accordingly, the generated arc may be rapidly moved and extinguished. The cover magnet unit is inserted into a surface of the upper cover and is not exposed to the outside. Therefore, the generated arc is not in contact with the cover magnet unit. As a result, the cover magnet unit is not damaged by the generated arc.

Abstract: A capacitor component includes: a plurality of conductive nanowires disposed to be spaced apart from each other; first and second connecting conductive layers respectively disposed on one end and the other end of the plurality of conductive nanowires, and connected to the plurality of conductive nanowires; a conductive body surrounding the plurality of conductive nanowires; and a dielectric film disposed between the plurality of conductive nanowires, each of the first and second connecting conductive layers, and the conductive body.

Abstract: The present disclosure provides a nanowire bundle including a plurality of cores including metal and arranged in a predetermined shape at regular intervals; a first glass portion including glass and covering the plurality of cores; and a second glass portion including glass and covering the first glass portion, and a method for manufacturing the nanowire bundle.

Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

Abstract: Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.

Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material. The Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.