Abstract: A spray unit in which a plurality of nozzle heads are integrally coupled and a substrate treatment apparatus including the spray unit are provided. The substrate treatment apparatus includes: a substrate support unit supporting a substrate and including a spin head, which rotates the substrate; a treatment liquid retrieval unit retrieving substrate treatment liquids used in treating the substrate; and a spray unit including a plurality of nozzle heads and pipes, which are connected to the nozzle heads, and providing the substrate treatment liquids onto the substrate through the nozzle heads and the pipes, wherein the nozzle heads are moved at the same time.

Abstract: Provided are an ozone water decomposition apparatus and method that can decompose ozone water quickly and stably.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a first process treating unit configured to treat a substrate in a single-type method; a second process treating unit configured to treat a substrate in a batch-type method; and a posture changing unit provided between the first process treating unit and the second process treating unit and configured to change a posture of the substrate between a vertical posture and a horizontal posture, and wherein the substrate is loaded to and unloaded from the first process treating unit.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a treating bath for liquid treating a plurality of substrates and having an accommodation space for accommodating a treating liquid; and a posture changing member for changing a posture of a substrate which is immersed in the treating liquid from a vertical posture to a horizontal posture.

Abstract: Provided is an apparatus for treating a substrate. In the exemplary embodiment, the apparatus for treating the substrate includes a support member configured to support a substrate and provided rotatably; a treating liquid nozzle configured to supply selectively a high-temperature first treating liquid and a high-temperature second treating liquid onto the substrate; and a controller configured to control the treating liquid nozzle so that the treating liquid nozzle first supplies the first treating liquid onto the substrate and then supplies the second treating liquid onto the substrate.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus comprises a first treating part performing, a liquid treatment on a plurality of substrates in a batch-type treating, method and a second treating part treating the substrates which have been treated at the first treating part, and performing, the liquid treatment or a drying treatment on a single substrate a single-type treating method.

Abstract: An apparatus for treating a substrate includes a support unit that supports the substrate and a nozzle that dispenses liquid plasma to etch a film formed on the substrate supported on the support unit.

Abstract: A method of filling a contact hole of a semiconductor device preceded by dry cleaning for removing a damaged layer resulting from dry etching is provided. The method includes selectively exposing an underlying material layer by a dry etch and dry cleaning including passing plasma excited from a source gas over the exposed underlying material layer to remove the damaged layer formed from the dry etch. Subsequently, an electrically conductive layer with which to fill the contact hole is formed. The formation of the electrically conductive layer is performed in a separate chamber connected sequentially to a chamber for performing the dry cleaning to prevent the exposed underlying material layer inside the dry cleaned contact hole from being exposed to a source of contamination.

Abstract: A copper-plating electrolyte includes an aqueous copper salt solution, a water-soluble &bgr;-naphtholethoxylate compound having the formula wherein n is an integer from 10 to 24, one selected from the group consisting of a disulfide having the formula XO3S(CH2)3SS(CH2)3SOX3 and a water-soluble mercaptopropanesulfonic acid or salt thereof having the formula HS(CH2)3SO3X, where X is sodium, potassium, or hydrogen, a water-soluble polyethylene glycol having a molecular weight ranging from about 4,600 to about 10,000, and a water-soluble polyvinylpyrrolidone having a molecular weight ranging from about 10,000 to about 1,300,000.

Abstract: A method of manufacturing a semiconductor device having a hemispherical grain (HSG) layer employs a dry cleaning process. A polysilicon layer is formed on a specific material layer on a semiconductor substrate. Next, a polysilicon pattern, at least a portion of which is exposed, is formed by etching the polysilicon layer. The exposed surface of the polysilicon pattern is then dry cleaned by supplying hydrogen in a plasma state and a fluorine-based gas toward the exposed surface. The exposed surface of the polysilicon pattern may also be wet cleaned before being dry cleaned to wash away pollutants which may have been left thereon. An HSG layer is then formed on the cleaned surface of the polysilicon pattern. After the HSG layer is formed, the surface of the HSG layer may be dry cleaned again by supplying hydrogen in a plasma state and a fluorine-based gas toward the surface of the HSG layer. The surface of the HSG layer may also be further wet cleaned before being dry cleaned.

Abstract: A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substrate. Cleaning solutions includes ammonium, hydrogen peroxide, deionized water, and chelating agent. The chelating agent includes one to three compounds selected from the group consisting of carboxylic acid compounds, phosphonic acid compounds, and hydroxyl aromatic compounds. The fluorine-containing gas is a gas selected from the group consisting of nitrogen trifluoride (NF3), hexafluorosulphur (SF6), and trifluorochlorine (ClF3).

Abstract: A method of manufacturing a semiconductor device such as a contact structure and a gate structure having a silicide layer comprises the steps of: forming a contact hole for exposing a part of the silicon substrate by etching a part of an interdielectric layer formed on a silicon substrate; and first cleaning an exposed surface of the silicon substrate, comprising the steps of: forming a reactive layer by supplying a hydrogen gas in a plasma state and a fluorine-series gas to the silicon substrate and by chemically reacting with an oxide film formed on the exposed surface of the silicon substrate; and annealing to cause the reactive layer to be removed by vaporizing the reactive layer; forming a silicide layer on the surface of the silicon substrate exposed in the contact hole; second cleaning comprising the steps of: forming a reactive layer by supplying a hydrogen gas in a plasma state and a fluorine-series gas to the silicon substrate and by chemically reacting with an oxide film formed on the exposed surfa

Abstract: A copper-plating electrolyte includes an aqueous copper salt solution, a water-soluble &bgr;-naphtholethoxylate compound having the formula 1

Abstract: A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substrate. Cleaning solutions includes ammonium, hydrogen peroxide, deionized water, and chelating agent. The chelating agent includes one to three compounds selected from the group consisting of carboxylic acid compounds, phosphonic acid compounds, and hydroxyl aromatic compounds. The fluorine-containing gas is a gas selected from the group consisting of nitrogen trifluoride (NF3), hexafluorosulphur (SF6), and trifluorochlorine (ClF3).

Abstract: To form isolation trenches on a semiconductor substrate, chemical mechanical polishing (CMP) stopping patterns are formed on the substrate, and the substrate is then etched using the CMP stopping patterns as a mask. Then an insulating material is deposited to fill the trenches and cover the CMP stopping patterns. The insulating material is etched using a CMP process until the CMP stopping patterns become exposed, and is then etched using a wet or dry etching process. The wet or dry etching is continued until protruding insulating material above a surface of the substrate is a predetermined thickness, which corresponds to an amount of the insulating material that is etched during removal of the CMP stopping patterns and during intermediate processes prior to formation of a gate oxide layer.

Abstract: A method of manufacturing a semiconductor device having a hemispherical grain (HSG) layer employs a dry cleaning process. A polysilicon layer is formed on a specific material layer on a semiconductor substrate. Next, a polysilicon pattern, at least a portion of which is exposed, is formed by etching the polysilicon layer. The exposed surface of the polysilicon pattern is then dry cleaned by supplying hydrogen in a plasma state and a fluorine-based gas toward the exposed surface. The exposed surface of the polysilicon pattern may also be wet cleaned before being dry cleaned to wash away pollutants which may have been left thereon. An HSG layer is then formed on the cleaned surface of the polysilicon pattern. After the HSG layer is formed, the surface of the HSG layer may be dry cleaned again by supplying hydrogen in a plasma state and a fluorine-based gas toward the surface of the HSG layer. The surface of the HSG layer may also be further wet cleaned before being dry cleaned.

Abstract: Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.

Abstract: Disclosed is a method of forming storage cell capacitors for use in dynamic random access memories, which comprises, after sequentially depositing a reaction barrier layer and a platinum layer on top of a contact plug which formed on a semiconductor substrate having a node, wet etching the reaction barrier layer to form lateral recesses underneath edges of the platinum layer, and forming sidewall spacer in the lateral recesses and underneath the platinum layer. Also, according to an another embodiment of the invention, a method comprise two important features, one is to surround sidewalls of a reaction barrier layer with an oxide layer, and the other is to form a platinum layer, serving as a storage node electrode of a capacitor, having an inclined plane of more than 80 degrees. The upper portion of the platinum layer has a steeply-sloped pattern of more than 80.degree.

Abstract: Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.

Abstract: A gas supply apparatus, for use in a semiconductor device manufacturing process, provides a showerhead for evenly supplying various kinds of gases to a reaction chamber. The gas supplying apparatus for use in the formation of a thin film of a semiconductor device includes a first porous plate having a plurality of first holes formed throughout its surface, and a central bore formed at its center; and a second porous plate having first projections which are regularly formed throughout its central portion, and second projections which contain depressions continuously formed around the first projections. The gas supplying apparatus evenly distributes gas into the reaction chamber, thereby improving the uniformity of the film thickness to be grown on a substrate.