Abstract: The present disclosure provides autotaxin (ATX) inhibitor compounds and compositions including said compounds. The present disclosure also provides methods of using said compounds and compositions for inhibiting ATX. Also provided are methods of preparing said compounds and compositions, and synthetic precursors of said compounds.

Abstract: Provided is an ultra large-width coating device applied to a consecutive process. More particularly, the present invention relates to a coating device capable of maximizing productivity by consecutively manufacturing a large-width film without reducing physical properties of the manufactured film by overcoming a problem in that a coating width is limited during a coating process using the existing contact type coating roller, and a method for manufacturing an ultra large-width membrane using the same.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: A gripper includes a body part, a finger base part coupled to the body part, and a finger part coupled to a first side of the body part or the finger base part and coupled to the body part or the finger base part to be reciprocal, wherein the finger part comprises a first link structure and a second link structure, sides of which are coupled to the finger base part, respectively, and wherein, in the first link structure and the second link structure, a first support area of the first link structure and a second support area of the second link structure reciprocate in only one of a plurality of directions that cross a direction in which the finger part reciprocates with respect to the finger base part.

Abstract: A gripper includes a body part, a finger base part coupled to the body part to be rotatable, the finger base part including a first finger base part and a second finger base part configured such that when the first finger base part is rotated in a first direction with respect to the body part, the second finger base part is provided to be rotatable in a second direction opposite the first direction with respect to the body part, and a finger part coupled to a first side of the body part or the finger base part to be reciprocal.

Abstract: A display device includes a display panel including a plurality of pixels, a data driver configured to provide data voltages to the pixels, and a gate driver configured to provide gate signals to the pixels. The display device also includes a controller configured to control the data driver and the gate driver, and to control the magnitude of a sensing initialization voltage applied to the pixels based on a frame rate value when operating in a variable frame mode.

Abstract: The present invention relates to a peptide with anti-inflammatory activity, wherein the peptide comprises SEQ ID NO: 1, the peptide has above 80% homology of amino acid sequence with above-mentioned sequence, or the peptide is the fragment of the above-mentioned peptides. The present invention also relates to an inflammatory composition comprising the above mentioned peptides. According to the present invention, a peptide comprising a sequence of SEQ ID NO: 1 has an outstanding efficacy in both suppressing inflammation and in prophylactic means. Therefore, the composition comprising the peptide of this invention can be used as anti-inflammatory pharmaceutical composition or as cosmetic composition, in turn, treating and preventing a variety of different types of inflammatory diseases.

Abstract: Disclosed is a hot-stamping component, which includes a base steel plate; and a plated layer on the base steel plate and including a first layer, a second layer, and an intermetallic compound portion having an island shape in the second layer, wherein the first layer and the second layer are sequentially stacked, and an area fraction of the intermetallic compound portion with respect to the second layer is an amount of 20% to 60%.

Abstract: The present disclosure relates to a gamma voltage generating circuit and a display device including the same. The gamma voltage generating circuit may include: a first output terminal to output a first gamma voltage set as a black grayscale voltage; a second output terminal to output a second gamma voltage set as a higher grayscale voltage than the black grayscale voltage; a third output terminal to output a third gamma voltage set as a highest grayscale voltage of the first pixel area; and a fourth output terminal to output a fourth gamma voltage set as a highest grayscale voltage of the second pixel area.

Abstract: A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.

Abstract: A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.

Abstract: The present disclosure relates to a data driving circuit and a display device including the same, and the data driving circuit includes a plurality of data input terminals to which pixel data of an input image is input, and a plurality of voltage input terminals to which gamma tab voltages for each color having different voltage levels, and common gamma tab voltages having different voltage levels are each input. When the input image includes pixel data having different grayscale values for each color, a data voltage of a corresponding color is changed when any one of the gamma tab voltages for each color is changed, and data voltages of all colors are changed when any one of the common gamma tab voltages is changed.

Abstract: A display device and a mobile terminal including the display device are discussed. The display device can include a display panel including a first pixel area and a second pixel area, a cover glass disposed on a first surface of the display panel in the second pixel area, an optical module disposed under a second surface of the display panel to face the second pixel area and configured to direct infrared light towards a light transmitting part of the second pixel area, and a diffractive optical element disposed on or in at least one of the cover glass and the display panel at a position corresponding to the light transmitting part of the second pixel area. The diffractive optical element can separate the infrared light from the optical module into a plurality of dot beams.

Abstract: The present disclosure relates to a gamma voltage generating circuit and a display device including the same. The gamma voltage generating circuit may include: a first output terminal to output a first gamma voltage set as a black grayscale voltage; a second output terminal to output a second gamma voltage set as a higher grayscale voltage than the black grayscale voltage; a third output terminal to output a third gamma voltage set as a highest grayscale voltage of the first pixel area; and a fourth output terminal to output a fourth gamma voltage set as a highest grayscale voltage of the second pixel area.

Abstract: The present disclosure relates to a method and device for providing training content. A method may comprise displaying a question card including a first area and a second area; determining a recommended question using an artificial intelligence (AI) model trained on the basis of training data of a user; displaying, on the first area of a screen of a learner terminal, a plurality of prediction values for information obtained by analyzing a correlation between the training ability of the user and the recommended question using the AI model, together with the recommended question; displaying summary information about the recommended question on the second area of the screen of the learner terminal; and displaying a question object of the recommended question on the screen of the learner terminal when the user decides to solve the recommended question on the basis of the plurality of prediction values and the summary information.

Abstract: Provided are a gate driving circuit and a display device including the same. The gate driving circuit includes a first outputter for outputting a first scan pulse that swings between a gate-on voltage and a first gate-off voltage, a second outputter for outputting a second scan pulse that swings between the gate-on voltage and a second gate-off voltage, and a controller for controlling the first and second outputters. The first gate-off voltage is set to be higher or lower than the second gate-off voltage.

Abstract: A display device can include a display panel to display an input image across a first subpixel region and a second subpixel region; a display panel driver to supply pixel data of the input image to subpixels of the display panel; a light source disposed under the display panel in an area overlapped by the second subpixel region; and a controller to drive the light source in an emission permitting section set within a non-driving period of a group of subpixels among the subpixels that are disposed in at least a portion of the second subpixel region.

Abstract: A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.

Abstract: A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.