Abstract: An integrated circuit device includes an active region, a silicon oxide dielectric film covering the active region, a metal oxide dielectric film apart from the active region with the silicon oxide dielectric film therebetween and including a first local region and a second local region that has a dopant content ratio greater than that of the first local region, a metal-containing word line apart from the silicon oxide dielectric film with each of the first local region and the second local region of the metal oxide dielectric film therebetween, and a doped silicon layer including a portion contacting the metal-containing word line and facing the second local region of the metal oxide dielectric film.

Abstract: There is provided a semiconductor memory device in which the degree of integration and electrical characteristics are improved. The semiconductor memory device includes a channel region, a word line which extends in a first direction, a gate insulating film between the channel region and the word line, and a gate liner between the gate insulating film and the word line, where the gate liner includes silicon, where the gate liner includes a first portion and a second portion, the first portion of the gate liner is free of an impurity element, and the second portion of the gate liner includes the impurity element.

Abstract: A semiconductor memory device may include a substrate including a cell area and a peripheral area around the cell area, a cell area isolation film within the substrate and separating the cell area and the peripheral area, a cell gate structure within the cell area and the cell area isolation film and including a cell gate electrode extending in a first direction and a cell gate plug on and connected to the cell gate electrode, wherein the cell gate electrode includes a lower cell gate electrode and an upper cell gate electrode stacked in a second direction, and an insertion cell gate film therebetween and including lanthanum (La), the cell gate electrode includes a first region and a second region arranged in the first direction, the insertion cell gate film is included in the first region, and is not included in the second region.

Abstract: A semiconductor memory device includes a channel region, a word line extending in a first direction, a gate insulating film being between the channel region and the word line and including silicon oxide, a first gate metal oxide film being between the gate insulating film and the word line, the first gate metal oxide film including first metal oxide, and a capping gate metal oxide film on an upper face of the word line and including second metal oxide, wherein the first gate metal oxide film includes a doped impurity element, and a concentration of the doped impurity element in the first gate metal oxide film is greater than a concentration of the doped impurity element in the capping gate metal oxide film.

Abstract: A semiconductor memory device includes a channel region, a word line extending in a first direction, the word line including a first portion and a second portion stacked in a second direction perpendicular to the first direction, a gate insulating film between the channel region and the word line, and a gate metal oxide film between the gate insulating film and the word line, the gate metal oxide film including metal oxide, wherein the gate metal oxide film includes a first portion overlapping the first portion of the word line in a third direction and the second portion overlapping the second portion of the word line in the third direction, the first portion of the gate metal oxide film includes an impurity element, the second portion of the gate metal oxide film does not include the impurity element, and the second direction is perpendicular to the third direction.

Abstract: A user wears a virtual reality mask (VR mask) (100) and then watches a virtual reality image. The VR mask (100) blocks light incident from the outside. When the user wears the VR mask (100), the user cannot discover an obstacle (500) positioned outside the VR mask (100). The user may collide with the obstacle (500) and may be injured by the obstacle (500). Accordingly, in order to prevent injury to the user who uses the VR mask (100), it is necessary to make the user recognize the obstacle (500) positioned outside the VR mask (100). In order to recognize an obstacle, a virtual reality image and the obstacle may be displayed together, or the amount of light incident from the outside may be adjusted.

Abstract: A user wears a virtual reality mask (VR mask) (100) and then watches a virtual reality image. The VR mask (100) blocks light incident from the outside. When the user wears the VR mask (100), the user cannot discover an obstacle (500) positioned outside the VR mask (100). The user may collide with the obstacle (500) and may be injured by the obstacle (500). Accordingly, in order to prevent injury to the user who uses the VR mask (100), it is necessary to make the user recognize the obstacle (500) positioned outside the VR mask (100). In order to recognize an obstacle, a virtual reality image and the obstacle may be displayed together, or the amount of light incident from the outside may be adjusted.