Abstract: A display device includes a substrate, an insulating layer disposed on the substrate, and including a trench in a portion thereof adjacent to an emission area without overlapping the emission area in a plan view, a first electrode disposed on the insulating layer, and overlapping the emission area and partially overlapping the trench in the plan view, an emission layer disposed on the first electrode, and overlapping the trench in the plan view, and a second electrode disposed on the emission layer, and overlapping the trench in the plan view, and disconnected by the trench.

Abstract: A display device according to an embodiment includes: a first conductive layer that is disposed on a substrate; a transistor that is disposed on the substrate; and a light emitting element that is electrically connected to the transistor, wherein the transistor includes a semiconductor layer that at least partially overlaps the first conductive layer and is disposed on the first conductive layer, and a gate electrode that is disposed on the semiconductor layer. The semiconductor layer includes a first region that does not overlap the first conductive layer, a third region that overlaps the first conductive layer, and a second region that is disposed between the first region and the third region and traverses an edge of the first conductive layer. The first width of the semiconductor layer in the first region is smaller than a second width of the semiconductor layer in the second region.

Abstract: A display device according to an embodiment includes: a first conductive layer that is disposed on a substrate; a transistor that is disposed on the substrate; and a light emitting element that is electrically connected to the transistor, wherein the transistor includes a semiconductor layer that at least partially overlaps the first conductive layer and is disposed on the first conductive layer, and a gate electrode that is disposed on the semiconductor layer. The semiconductor layer includes a first region that does not overlap the first conductive layer, a third region that overlaps the first conductive layer, and a second region that is disposed between the first region and the third region and traverses an edge of the first conductive layer. The first width of the semiconductor layer in the first region is smaller than a second width of the semiconductor layer in the second region.

Abstract: Provided is a bus network system including: a master node switch; and a plurality of slave node switches, wherein each of the plurality of slave node switches includes at least one band limit switch configured to transmit signals in a given band, and each of the plurality of slave node switches is configured to be physically on/off controlled.

Abstract: Provided is a bus network system including: a master node switch; and a plurality of slave node switches, wherein each of the plurality of slave node switches includes at least one band limit switch configured to transmit signals in a given band, and each of the plurality of slave node switches is configured to be physically on/off controlled.