Abstract: A phase change memory device includes a semiconductor substrate active region, a plurality of first conductivity type silicon pillars, and a plurality of second conductivity type silicon patterns. The plurality of first conductivity type silicon pillars is formed on the semiconductor active region such that each first conductivity type silicon pillar is provided for two adjoining cells. The plurality of second conductivity type silicon patterns is formed on the plurality of first conductivity type silicon pillars such that two second conductivity type silicon patterns are formed on opposite sidewalls of each first conductivity type silicon pillars. Two adjoining cells together share only one first conductivity type silicon pillar and each adjoining cell is connected to only one second conductivity type silicon pattern which constitutes a PN diode which serves as a single switching element for each corresponding cell.

Abstract: Disclosed are a vacuum insulation panel and an insulation structure of a refrigerator using the same. The vacuum insulation panel comprises a core material formed by gather glass fiber, a getter having a container to receive an absorbent having quicklime of 90 wt % or greater as a main component, and a sealing cover formed to surround the core material and the getter. The core material can be formed at low cost in such a manner that glass fiber is tangled and gathered by penetrating glass wool having glass fiber using a needle. Since the getter is made of quicklime that can first remove water corresponding to a main component of the absorbent, the getter can be manufactured at low cost and has improved insulation efficiency.

Abstract: A semiconductor device includes a silicon substrate; a device isolation structure formed in the silicon substrate to delimit an active region which has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outside the gate forming areas; an asymmetric bulb-type recess gate formed in each gate forming area of the active region and having the shape of a bulb on the lower end portion of the sidewall thereof facing the source forming area; and source and drain areas respectively formed on the surface of the substrate on both sides of the asymmetric bulb-type recess gate.

Abstract: The present invention relates to an external film for an electric home appliance and a home appliance using the same, there are advantages in that strength of the external film is reinforced and the product is reduced in weight while having the feeling of texture of metal materials, as a PET layer or a PVC layer is provided at upper and lower surfaces of a metal layer such as an A1 layer.

Abstract: The reinforcing component for a refrigerator, which is formed by mixing a base material as a synthetic resin material and a supplement component formed by arranging reinforcing fibers according to a pultrusion method, and combined with one or more portions of on one portion of an inner side of an outer case of the refrigerator to contact with foam, a corner of the bottom of the refrigerator or in a mechanic chamber of the refrigerator, an outer plate or an inner plate of a door of the refrigerator, and the interior of a side wall forming an inner space of the refrigerator can reduce the weight of the refrigerator while maintaining the strength.

Abstract: A phase change memory device includes a semiconductor substrate active region, a plurality of first conductivity type silicon pillars, and a plurality of second conductivity type silicon patterns. The plurality of first conductivity type silicon pillars is formed on the semiconductor active region such that each first conductivity type silicon pillar is provided for two adjoining cells. The plurality of second conductivity type silicon patterns is formed on the plurality of first conductivity type silicon pillars such that two second conductivity type silicon patterns are formed on opposite sidewalls of each first conductivity type silicon pillars. Two adjoining cells together share only one first conductivity type silicon pillar and each adjoining cell is connected to only one second conductivity type silicon pattern which constitutes a PN diode which serves as a single switching element for each corresponding cell.

Abstract: Disclosed is a non-volatile memory having three data states and a method for manufacturing the same. The non-volatile memory includes a silicon substrate having a device separation film; a floating gate formed on the silicon substrate; a tunnel oxide film interposed between the silicon substrate and the floating gate below both ends of the floating gate; a ferroelectric substance interposed between the silicon substrate and the floating gate inside the tunnel oxide film; a diffusion barrier film enclosing the ferroelectric substance; a control gate formed on the substrate including the floating gate; a gate oxide film formed below the control gate; spacers formed on both lateral walls of the laminated floating gate and control gate including the tunnel oxide film and gate oxide film, respectively; and source/drain regions formed within the substrate surfaces on both sides of the control gate including the spacers, respectively.

Abstract: A semiconductor device comprises buried bit lines which are formed to be brought into contact with drain areas of vertical pillar transistors. The buried bit lines are arranged along a first direction in a silicon substrate. The buried bit lines are formed of epi-silicon to reduce the resistance of the buried bit lines.

Abstract: A semiconductor device includes vertical pillar transistors formed in respective silicon pillars of a silicon substrate. The gates of the vertical pillar transistor are selectively formed on a single surface of lower portions of the silicon pillars, and drain areas of the vertical pillar transistors are connected with one another.

Abstract: A vacuum insulation panel and an insulation structure of a refrigerator applying the same are disclosed. The vacuum insulation panel comprises: a sealing cover (120) having an outermost layer exposed to the outside, a gas shielding layer stacked on the bottom surface of the outermost layer and formed of a thin metal sheet and a metal deposition film, and a heating-fusion bonding layer stacked on the bottom surface of the gas shielding layer and formed of an octane-base material; a core material (110) sealed by the sealing cover (120) in contact with the heating-fusion bonding layer, and provided with an extended insulation portion (130) some parts of which are extended between the bonding portions formed at the sealing cover (120); and a gas permeation preventing layer (125) formed on the sealing cover (120), so that can prevent an external air or moisture from penetrating into a vacuum insulation panel.

Abstract: Disclosed are a vacuum insulation panel and an insulation structure of a refrigerator using the same. The vacuum insulation panel comprises a core material formed by gather glass fiber, a getter having a container to receive an absorbent having quicklime of 90 wt % or greater as a main component, and a sealing cover formed to surround the core material and the getter. The core material can be formed at low cost in such a manner that glass fiber is tangled and gathered by penetrating glass wool having glass fiber using a needle. Since the getter is made of quicklime that can first remove water corresponding to a main component of the absorbent, the getter can be manufactured at low cost and has improved insulation efficiency.

Abstract: A semiconductor device includes a silicon substrate; a device isolation structure formed in the silicon substrate to delimit an active region which has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outside the gate forming areas; an asymmetric bulb-type recess gate formed in each gate forming area of the active region and having the shape of a bulb on the lower end portion of the sidewall thereof facing the source forming area; and source and drain areas respectively formed on the surface of the substrate on both sides of the asymmetric bulb-type recess gate.

Abstract: A semiconductor device has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outside of the gate forming areas in the active region. Recess gates are formed in the respective gate forming areas of the active region and depressed inward on the sidewalls of lower buried portions thereof formed in the substrate, which face the drain forming area, such that each of the lower buried portions has a decreased width, thereby creating an asymmetrical structure in which the distance between the lower buried portions of the recess gates is greater than the distance between upper buried portions of the recess gates. Source and drain areas formed on the surface of the substrate on both sides of the recess gates.

Abstract: Disclosed is a non-volatile memory having three data states and a method for manufacturing the same. The non-volatile memory includes a silicon substrate having a device separation film; a floating gate formed on the silicon substrate; a tunnel oxide film interposed between the silicon substrate and the floating gate below both ends of the floating gate; a ferroelectric substance interposed between the silicon substrate and the floating gate inside the tunnel oxide film; a diffusion barrier film enclosing the ferroelectric substance; a control gate formed on the substrate including the floating gate; a gate oxide film formed below the control gate; spacers formed on both lateral walls of the laminated floating gate and control gate including the tunnel oxide film and gate oxide film, respectively; and source/drain regions formed within the substrate surfaces on both sides of the control gate including the spacers, respectively.

Abstract: Disclosed are a fixing structure of insulation panels and a prefabricated refrigerator with the same. The fixing structure of insulation panels includes a recess recessed on one surface of a first insulation panel having an insulation portion inside a casing, and a protrusion formed to be inserted into the recess, on one surface of a second insulation panel having an insulation portion inside a casing, wherein the insulation portions of nonmetal material are exposed to a bottom of the recess and a front end of the protrusion so as to shield a transmission path of heat flowed along a casing contact surface of the insulation panels, thereby improving insulation efficiency.

Abstract: Disclosed is an iris identification system and method, and storage media having program thereof. The iris identification system comprising a characteristic vector database (DB) for pre-storing characteristic vectors to identify persons; an iris image extractor for extracting an iris image in the eye image inputted from the outside; a characteristic vector extractor for multi-dividing the iris image extracted by the iris image extractor, obtaining a iris characteristic region from the multi-divided each iris image, and extracting a characteristic vector from the iris characteristic region by a statistical method; and a recognizer for comparing the characteristic vector DB thereby identifying a person.