Abstract: A reconfigurable optical frequency selective structure having embedded therein: (a) an array of optical antennas for picking up propagating radiation in a visible or infrared frequency region and achieving preferential absorption of electromagnetic energy at a target wavelength k within the region, (b) an array of optical mesa structures of sub-wavelength scale including a phase-change material, the array of optical antennas being disposed atop the array of optical mesa structures respectively; (c) a metal ground plane disposed beneath the array of optical mesa structures, the array of optical mesa structures standing above the ground plane or an interfacial layer and being separated from one another to inhibit parasitic capacitance coupling therebetween; and (d) a plurality of heaters for selectively heating any one of the array of optical mesa structures to cause the phase change material in the selected optical mesa structure to change from an amorphous state, wherein the antenna atop the selected mesa

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: A transition metal dichalcogenide (TMD) transistor includes a substrate, an n-type two-dimensional (2D) TMD layer, a metal source electrode, a metal drain electrode, and a gate dielectric. The substrate has a top portion that is an insulating layer, and the n-type 2D TMD layer is on the insulating layer. The metal source electrode, the metal drain electrode, and the gate dielectric are on the n-type 2D TMD layer. The metal gate electrode is on top of the gate dielectric and is between the metal source electrode and the metal drain electrode.

Abstract: An electric field-controlled refractive index tunable device includes a phase change correlated transition metal oxide layer, and E-field responsive charge dopants. The E-field responsive charge dopants either accumulate in the phase change correlated transition metal oxide layer or are depleted from the phase change correlated transition metal oxide layer in response to an E-field applied to the phase change correlated transition metal oxide layer.

Abstract: A transition metal dichalcogenide (TMD) transistor includes a substrate, an n-type two-dimensional (2D) TMD layer, a metal source electrode, a metal drain electrode, and a gate dielectric. The substrate has a top portion that is an insulating layer, and the n-type 2D TMD layer is on the insulating layer. The metal source electrode, the metal drain electrode, and the gate dielectric are on the n-type 2D TMD layer. The metal gate electrode is on top of the gate dielectric and is between the metal source electrode and the metal drain electrode.

Abstract: A solid state optical beam steering device including a body of electro-optical material wherein the body of electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein the body has a first face and a second face opposite the first face, a first transparent resistive sheet on the first face of the body of electro optic material, wherein the first transparent resistive sheet has a first side and a second side, and a transparent conductor on the second face of the body of electro optic material, wherein the transparent conductor is coupled to the second side of the first transparent resistive sheet.

Abstract: A method of providing a spatial light modulator comprising: providing a substrate; providing a first phase change material cell on the substrate, the first phase change material cell comprising: a first electrical heater on the substrate; a first optical reflector layer on the electrical heater; and a first phase change material layer on the optical reflector layer; and providing at least a second phase change material cell on the substrate, the second phase change material cell comprising: a second electrical heater on the substrate; a second optical reflector layer on the second electrical heater; a second phase change material layer on the second optical reflector layer; and providing a light absorber layer between the first phase change material cell and the second phase change material cell.

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: A field effect transistor includes a substrate, a passivation layer on the substrate forming a passivated substrate, wherein the passivation layer is inert to XeF2, and a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate.

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: A solid state electrically variable focal length lens includes a plurality of concentric rings of electro-optical material, wherein the electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein each respective concentric ring further includes a transparent resistive sheet on a first face of the respective concentric ring, wherein the transparent resistive sheet extends along the first face, and a first voltage coupled between a first end and a second end of the transparent resistive sheet, wherein the first voltage may be varied to select an optical beam deflection angle.

Abstract: A solid state electrically variable focal length lens includes a plurality of concentric rings of electro-optical material, wherein the electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein each respective concentric ring further includes a transparent resistive sheet on a first face of the respective concentric ring, wherein the transparent resistive sheet extends along the first face, and a first voltage coupled between a first end and a second end of the transparent resistive sheet, wherein the first voltage may be varied to select an optical beam deflection angle.

Abstract: A spatial light modulator includes a substrate, a phase change material cell on the substrate, the phase change material cell including an electrical heater on the substrate, an optical reflector layer on the electrical heater, and a phase change material layer on the optical reflector layer.

Abstract: A solid state electrically variable focal length lens includes a plurality of concentric rings of electro-optical material, wherein the electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein each respective concentric ring further includes a transparent resistive sheet on a first face of the respective concentric ring, wherein the transparent resistive sheet extends along the first face, and a first voltage coupled between a first end and a second end of the transparent resistive sheet, wherein the first voltage may be varied to select an optical beam deflection angle.

Abstract: A solid state optical beam steering device including a body of electro-optical material wherein the body of electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein the body has a first face and a second face opposite the first face, a first transparent resistive sheet on the first face of the body of electro optic material, wherein the first transparent resistive sheet has a first side and a second side, and a transparent conductor on the second face of the body of electro optic material, wherein the transparent conductor is coupled to the second side of the first transparent resistive sheet.

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: An optical apparatus may comprise: an electrically reconfigurable optical layer comprising at least one phase-change material, wherein an optical property of the phase-change material is reconfigurable by an electric field; an optically transparent top electrode and a bottom electrode, the top and bottom electrodes configured to apply the electric field to the electrically reconfigurable optical layer, wherein the electrically reconfigurable optical layer is disposed between the optically transparent top electrode and the bottom electrode; and a colossal-K dielectric layer disposed between the electrically reconfigurable optical layer and the bottom electrode. The phase-change material of the electrically reconfigurable optical layer may comprise phase-change nickelate or tungsten oxide. The phase-change material of the electrically reconfigurable optical layer may have a perovskite structure.

Abstract: A device including a biopolymer membrane, a passivation layer on the biopolymer membrane, a graphene layer on the passivation layer, a source electrode on the graphene layer, and a drain electrode on the graphene layer, wherein the graphene layer extends between the source electrode and the drain electrode.

Abstract: An optical apparatus may comprise: an electrically reconfigurable optical layer comprising at least one phase-change material, wherein an optical property of the phase-change material is reconfigurable by an electric field; an optically transparent top electrode and a bottom electrode, the top and bottom electrodes configured to apply the electric field to the electrically reconfigurable optical layer, wherein the electrically reconfigurable optical layer is disposed between the optically transparent top electrode and the bottom electrode; and a colossal-K dielectric layer disposed between the electrically reconfigurable optical layer and the bottom electrode. The phase-change material of the electrically reconfigurable optical layer may comprise phase-change nickelate or tungsten oxide. The phase-change material of the electrically reconfigurable optical layer may have a perovskite structure.

Abstract: A neuroelectric sensor and stimulator system includes a first antenna, a reader coupled to the first antenna for transmitting stimulation controls and power to a second antenna, and for receiving sensor data transmitted from the second antenna via the first antenna, and at least one neuroelectric sensor stimulator array including the second antenna, a rectifier coupled to the second antenna for extracting power transmitted from the first antenna, a controller coupled to the second antenna for decoding controls transmitted from the first antenna to the second antenna for the neuroelectric sensor stimulator array, a plurality of sensors, a multiplexer coupled to the controller and to the plurality of sensors for selecting a single sensor, and a plurality of stimulators coupled to the controller for stimulating neurons, wherein the rectifier, the controller, the plurality of sensors, the multiplexer, and the plurality of stimulators include graphene.