Abstract: A display device includes a pixel including a first sub-pixel to third sub-pixels, each arranged in a first direction and emitting light of a color, a first to third vertical power lines, each extending in a second direction different from the first direction, overlapping the first to third sub-pixels, respectively, and transmitting first to third powers, respectively, a first to third horizontal power lines, each extending in the first direction and electrically connected to the first to third vertical power lines through a contact hole, respectively. Voltages of the first power, the second power, and the third power are different from each other.

Abstract: An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.

Abstract: An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.

Abstract: Disclosed are a sensor-embedded display panel and an electronic device including the sensor-embedded display panel. The sensor-embedded panel may include a light emitting element and a photosensor on a substrate. The light emitting element may include a light emitting layer and the photosensor may include a photosensitive layer in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include respective portions of a first common auxiliary layer. The first common auxiliary layer may be continuous along the in-place direction of the substrate and under each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a fluorine-containing p-type semiconductor and a non-fullerene n-type semiconductor. The non-fullerene n-type semiconductor may form a pn junction with the p-type semiconductor.

Abstract: A display device includes electrodes spaced from each other in a display area, light emitting elements between the electrodes, test electrodes spaced from each other in a test area, and a test transistor electrically connected to the electrodes and the test electrodes.

Abstract: A display device includes: a first internal bank and a second internal bank spaced apart on a substrate; a first reflective layer disposed on the first internal bank; a second reflective layer spaced apart from the first reflective layer and disposed on the second internal bank; a first insulating layer disposed on the first reflective layer and the second reflective layer; a first electrode disposed on the first insulating layer and overlapping the first reflective layer; a second electrode disposed on the first insulating layer, overlapping the second reflective layer, and being spaced apart from the first electrode; a second insulating layer disposed on the first electrode and the second electrode; and a light emitting element disposed on the second insulating layer and overlapping a space between the first electrode and the second electrode.

Abstract: A display device that includes a display area and a non-display area surrounding the display area, a substrate, pixels disposed in the display area of the substrate, a grounding part disposed in the non-display area of the substrate, and a flexible printed circuit board disposed in the non-display area of the substrate to apply a driving signal to drive the pixels, wherein the non-display area includes first through fourth portions, the fourth portion on which the flexible printed circuit board is disposed, and the second portion spaced-apart from the fourth portion by the display area, the grounding part including a first ground pattern and a second ground pattern that are arranged alternately in the second portion of the non-display area.

Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.

Abstract: A display device includes: first to fourth alignment electrodes sequentially arranged while being spaced from each other in a first direction in a first emission area; a bank on the first to fourth alignment electrodes, the bank including first and second horizontal extension parts extending in the first direction and first to third vertical extension parts extending in a second direction crossing the first direction, the bank partitioning the first emission area and a second emission area; first light emitting elements overlapping with the first alignment electrode and the second alignment electrode on the first alignment electrode and the second alignment electrode; second light emitting elements overlapping with the second alignment electrode and the third alignment electrode on the second alignment electrode and the third alignment electrode; and third light emitting elements overlapping with the third and fourth alignment electrodes on the third and fourth alignment electrodes.

Abstract: A display device including: a first sub-pixel, a second sub-pixel, and a third sub-pixel adjacent to each other, each of the first, second, and third sub-pixels including an emission area and a non-emission area, where each of the first, second, and third sub-pixels includes: a first alignment electrode and a second alignment electrode spaced from each other; a first insulating layer on the first alignment electrode and the second alignment electrode; light emitting elements on the first insulating layer on the first alignment electrode and the second alignment electrode in the emission area; a second insulating layer on the first insulating layer and the light emitting elements; and a third insulating layer on the second insulating layer, wherein the second and the third insulating layers are not on at least one area of the first alignment electrode in at least the non-emission area.

Abstract: An electronic device includes a display panel and a biometric sensor. The display panel includes a light emitter. The biometric sensor is stacked with the display panel and is configured to detect light emitted from the display panel and reflected by a recognition target that is external to the electronic device. The biometric sensor includes a silicon substrate and a photoelectric conversion element on the silicon substrate. The photoelectric conversion element includes a photoelectric conversion layer having wavelength selectivity.

Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

Abstract: A display device includes subpixels comprising a plurality of first type subpixels and a plurality of second type subpixels, a plurality of electrodes, each comprising an electrode stem portion and at least one electrode protrusion portion, a plurality of light emitting elements having a shape of extending in one direction and disposed on the electrode stem portion of the one electrode and the electrode protrusion portion of the other electrode, and a plurality of first contact electrodes contacting a first end of the light emitting elements and a plurality of second contact electrodes contacting a second end of the light emitting elements, wherein the light emitting elements comprise first type light emitting elements and second type light emitting elements, and the first ends of the first type light emitting elements and the second type light emitting elements face in opposite directions.

Abstract: A display device includes electrodes on a base layer; a first insulating layer on the electrodes; a bank on the first insulating layer, protruding in a thickness direction of the base layer, and surrounding a region; light emitting elements in the region on the base layer; and connection electrodes electrically connected to the light emitting elements. The connection electrodes include an anode connection electrode electrically connected to the light emitting elements, a cathode connection electrode electrically connected to the light emitting elements, and an extension connection electrode on the bank. The first insulating layer forms at least one first opening. The at least one first opening overlaps the extension connection electrode in a plan view.

Abstract: An organic sensor includes a first electrode, a second electrode, an organic active layer between the first electrode and the second electrode, and a protective layer between the organic active layer and the second electrode. Capacitance provided of the first electrode, the protective layer, and the second electrode is less than or equal to about 2×10?10 F.

Abstract: A display device includes a first voltage line disposed on a substrate, a first power supply voltage being applied to the first voltage line, a buffer layer disposed on the first voltage line, a first transistor including a semiconductor pattern disposed on the buffer layer, a first insulating layer disposed on the semiconductor pattern of the first transistor, a first capacitor electrode disposed on the first insulating layer, a second insulating layer disposed on the first capacitor electrode, and a first electrode and a second electrode disposed on the second insulating layer and spaced apart from each other, wherein the second electrode is electrically connected to the first voltage line, and the first voltage line overlaps the first capacitor electrode in a thickness direction of the substrate.

Abstract: A display device includes a light-emitting diode including a first conductivity-type semiconductor, an active layer, and a second conductivity-type semiconductor; a first voltage line to which a first voltage is applied; a second voltage line to which a second voltage is applied; a first transistor including a source electrode electrically connected to the first voltage line and a drain electrode electrically connected to a first electrode of the light-emitting diode and to the first conductivity-type semiconductor; a second transistor including a drain electrode electrically connected to a gate electrode of the first transistor and a source electrode electrically connected to a data line to apply a data signal; a capacitor electrically connected to the gate electrode of the first transistor and the first electrode; and a third transistor including a source electrode electrically connected to the second voltage line and a drain electrode electrically connected to the first electrode.

Abstract: Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

Abstract: A display device includes a first base substrate on which a plurality of sub-pixels are defined, a first insulating layer disposed on the first base substrate and including a first and second surfaces, the first surface facing the first base substrate, a plurality of light-emitting elements arranged in each of the plurality of sub-pixels on the first surface of the first insulating layer, a first and second electrodes directly arranged on the first surface of the first insulating layer and electrically contacting each end of each of the light-emitting elements, a circuit layer disposed between the first and second electrodes and the first base substrate and including first transistors electrically connected to the light-emitting elements, a color control structure arranged on the second surface of the first insulating layer and including a light-transmitting layer and wavelength conversion layers, and a color filter layer disposed on the color control structure.

Abstract: A photoelectric conversion device includes a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, the first material and the second material being configured to form a pn junction, and a third material different from the first material and the second material. The third material includes an electron withdrawing group.