Abstract: Provided are a source supplying unit and a method for supplying a source. The source supplying unit includes a pot configured to store a source material, an injector communicating with the pot to inject the source material evaporated from the pot, a high frequency coil part surrounding an outside of the pot, and a resistance-type heating part disposed at an outside of the injector. Since a high frequency induction heating method and a resistance-type heating method are combined to evaporate a source material to be supplied, a large amount of source material can be used, and the thickness and quality of a thin film can be easily controlled.

Abstract: The present invention relates to a plasma reactor for manufacturing electronic components which includes a reactor having a plasma generation region therein, and gas injection for injecting a reaction gas into the reactor. In the plasma reactor, a magnetic coil array unit is formed along an outer circumferential surface of the reactor, and a plurality of support members on which a coil is wound are installed along an outer circumferential surface of the reactor. A coil is wound onto each support member by a certain number of windings, and each magnetic coil is connected in series to each other in such a manner that the coils connected to neighboring support members have opposite polarities. The gas injector includes a gas spraying plate through which a gas is injected, and a separate gas spraying port formed in the gas spraying plate so that a main reaction gas and a mixing gas are sprayed along different paths.