Abstract: A cooling structure includes a housing having a cooling channel defined therein through which a coolant flows and includes a sealing cap fitted to a hole of the housing to seal the hole. The sealing cap includes a blocking member configured to be in contact with an internal surface of the housing. The cooling structure may be for cooling a motor, such as an in-wheel vehicle motor.

Abstract: A channel structure includes a cooling channel continuously formed inside a housing. A coolant is configured to flow in the cooling channel. The cooling channel includes a plurality of channel portions spaced apart from each other and extending in the housing by changing directions.

Abstract: The present disclosure provides a sealing device and an in-wheel motor including the sealing device. The in-wheel motor includes a stator, a rotor rotatably disposed with respect to the stator, an annular inner seal connected to the stator and spaced apart from the rotor by a predetermined gap so as to be disposed between the stator and the rotor, and an annular slinger coupled to an end portion of the rotor, wherein the annular inner seal seals between the slinger and the in-wheel motor.

Abstract: Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.

Abstract: The plasma processing apparatus for processing a semiconductor substrate using plasma and a method thereof can maintain a steady state simultaneously while maximizing a plasma electron density. The plasma processing apparatus includes: a chamber which generates plasma to process a semiconductor substrate; upper and lower electrodes arranged in the chamber; a DC power-supply unit which applies a DC voltage to either one of the upper and lower electrodes; and a controller which adjusts a power ratio of the DC voltage applied from the DC power-supply unit to either one of the upper and lower electrodes. As a result, the apparatus certainly confines electrons, so that the electrodes are not emitted from the plasma, resulting in a maximized plasma electron density.

Abstract: Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.