Abstract: A thin film deposition apparatus includes a reaction chamber, a main disk installed in the reaction chamber, and a gas discharging unit disposed outside the main disk. The gas discharging unit recollects a gas in the reaction chamber, and includes: a base member that includes an outer sidewall, an inner sidewall, and a lower wall that connects the outer and inner sidewalls, and is ring-shaped with an open upper portion. At least one through hole is formed in the lower wall. A discharge sleeve is configured to be inserted into the through hole, wherein a gas outlet is formed in the discharge sleeve. An upper cover that is ring-shaped covers the open upper portion of the base member. A plurality of gas inlets are formed in the upper cover.

Abstract: There is provided a vapor phase deposition apparatus including: a reaction chamber having a susceptor with a wafer mounted thereon and depositing and growing an epitaxial thin film on the wafer; a housing having the reaction chamber disposed therein and having a window opened and closed to allow the wafer to be loaded into or unloaded from the wafer reaction chamber; and an exhaust unit discharging gas from within the housing to the outside to adjust internal pressure of the housing.

Abstract: Susceptor and chemical vapor deposition (CVD) apparatus including the same. The susceptor includes: a plurality of susceptor slices that form a disk when combined together; and at least one pocket disposed on an upper surface of each of the plurality of susceptor slices and containing a member on which a material is to be deposited, wherein, a connection part is formed between side surfaces of neighboring susceptor slices and allows the plurality of susceptor slices to be combined to each other in a separable/detachable manner.