Patents by Inventor KYUNG-DUCK LEE
KYUNG-DUCK LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11488996Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.Type: GrantFiled: March 19, 2020Date of Patent: November 1, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-Ki Lee, Hye-Jung Kim, Hong-Ki Kim, Kyung-Duck Lee
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Publication number: 20220344384Abstract: An image sensor includes a substrate with a first surface opposite a second surface, a pixel isolation pattern defining first and second unit pixels adjacent to each other in the substrate, and first and second separation patterns in the substrate. The first unit pixel includes first and second photoelectric conversion parts along a first direction. The second unit pixel includes third and fourth photoelectric conversion parts along a second direction intersecting the first direction. The first separation pattern extends in the second direction between the first and second photoelectric conversion parts. The second separation pattern extends in the first direction between the third and fourth photoelectric conversion parts. A width of the pixel isolation pattern, a width of the first separation pattern, and a width of the second separation pattern each decrease from the second surface of the substrate toward the first surface of the substrate.Type: ApplicationFiled: November 30, 2021Publication date: October 27, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Min Ji JUNG, Doo Sik SEOL, Sung Min AN, Kyung Duck LEE, Kyung Ho LEE, Seung Ki JUNG, You Jin JEONG, Tae Sub JUNG, Jeong Jin CHO, Masato FUJITA
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Publication number: 20220123032Abstract: An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.Type: ApplicationFiled: June 28, 2021Publication date: April 21, 2022Inventors: Kyung Duck LEE, Doo Sik SEOL, Kyung Ho LEE, Tae Sub JUNG, Masato FUJITA
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Publication number: 20200219913Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.Type: ApplicationFiled: March 19, 2020Publication date: July 9, 2020Inventors: YUN-KI LEE, HYE-JUNG KIM, HONG-Kl KIM, KYUNG-DUCK LEE
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Patent number: 10608033Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.Type: GrantFiled: February 25, 2019Date of Patent: March 31, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-Ki Lee, Hye-Jung Kim, Hong-Ki Kim, Kyung-Duck Lee
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Publication number: 20190189653Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.Type: ApplicationFiled: February 25, 2019Publication date: June 20, 2019Inventors: YUN-KI LEE, HYE-JUNG KIM, HONG-KI KIM, KYUNG-DUCK LEE
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Patent number: 10249667Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.Type: GrantFiled: March 20, 2018Date of Patent: April 2, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-Ki Lee, Hye-Jung Kim, Hong-Ki Kim, Kyung-Duck Lee
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Publication number: 20180211986Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.Type: ApplicationFiled: March 20, 2018Publication date: July 26, 2018Inventors: YUN-KI LEE, HYE-JUNG KIM, HONG-Kl KIM, KYUNG-DUCK LEE
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Patent number: 9947707Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.Type: GrantFiled: August 26, 2015Date of Patent: April 17, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-Ki Lee, Hye-Jung Kim, Hong-Ki Kim, Kyung-Duck Lee
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Patent number: 9876044Abstract: An image sensor includes a semiconductor layer including a first surface and a second surface, which are opposite to each other. A plurality of unit pixels is in the semiconductor layer. Each of the unit pixels includes a first photoelectric converter and a second photoelectric converter. A first isolation layer isolates adjacent unit pixels from one another. A second isolation layer is between the first photoelectric converter and the second photoelectric converter. The first isolation layer has a different shape from the second isolation layer.Type: GrantFiled: December 8, 2016Date of Patent: January 23, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-ki Lee, Kyung-duck Lee, Min-wook Jung
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Publication number: 20170170216Abstract: An image sensor includes a semiconductor layer including a first surface and a second surface, which are opposite to each other. A plurality of unit pixels is in the semiconductor layer. Each of the unit pixels includes a first photoelectric converter and a second photoelectric converter. A first isolation layer isolates adjacent unit pixels from one another. A second isolation layer is between the first photoelectric converter and the second photoelectric converter. The first isolation layer has a different shape from the second isolation layer.Type: ApplicationFiled: December 8, 2016Publication date: June 15, 2017Inventors: Yun-ki LEE, Kyung-duck LEE, Min-wook JUNG
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Publication number: 20160064430Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.Type: ApplicationFiled: August 26, 2015Publication date: March 3, 2016Inventors: YUN-KI LEE, HYE-JUNG KIM, HONG-KI KIM, KYUNG-DUCK LEE