Abstract: An apparatus is disclosed which includes an ultraviolet laser and at least one reflective mirror having a substrate which is made from beryllium, an aluminum metal matrix, or silicon carbide. The at least one mirror is adapted to reflect a laser beam generated from the ultraviolet laser, which can then be used on a silicon film used in the production of an electronic display. The laser beam can be used to anneal the silicon film, or in a laser lift-off process for separating the silicon film from a temporary substrate upon which the silicon film was mounted.

Abstract: An apparatus which includes an ultraviolet laser and at least one reflective mirror having a substrate which is made from beryllium, an aluminum metal matrix, or silicon carbide. The at least one mirror is adapted to reflect a laser beam generated from the ultraviolet laser, which can then be used on a silicon film used in the production of an electronic display. The laser beam can be used to anneal the silicon film, or in a laser lift-off process for separating the silicon film from a temporary substrate upon which the silicon film was mounted.

Abstract: A base plate containing a having a top and a bottom and comprising a beryllium oxide composition containing at least 95 wt % beryllium oxide and optionally fluorine/fluoride ion. The base plate demonstrates a clamping pressure of at least 133 kPa at a temperature of at least 600° C. and a bulk resistivity greater than 1×105 ohm-m at 800° C.

Abstract: An apparatus is disclosed which includes an ultraviolet laser and at least one reflective mirror having a substrate which is made from beryllium, an aluminum metal matrix, or silicon carbide. The at least one mirror is adapted to reflect a laser beam generated from the ultraviolet laser, which can then be used on a silicon film used in the production of an electronic display. The laser beam can be used to anneal the silicon film, or in a laser lift-off process for separating the silicon film from a temporary substrate upon which the silicon film was mounted.

Abstract: Various exemplary embodiments of the present invention relate to a method for controlling magnetic leakage flux in a sputtering target containing magnetic and non-magnetic elements. The method relates to selecting a particle size of at least one non-magnetic phase in a microstructure, where the particle size of the non-magnetic phase is greater than or equal to one micron. The non-magnetic phase is combined with at least one magnetic phase in the microstructure, where the magnetic phase is greater than or equal to 10 atomic percent and is greater than one micron in size. The selected particle size of the non-magnetic phase decreases the diffusion between the magnetic and non-magnetic phases in the microstructure, and may increase the pass through flux (PTF) of the sputtering target. The magnetic phase and non-magnetic phases may be combined in the microstructure by hot isostatic pressing, sintering, spark plasma sintering, or vacuum hot pressing.

Abstract: A cover-locking device for a video tape cassette comprising a cover-locking pin having a lock-releasing protrusion and an engaging protrusion and being pivotably supported in a half-down of the cassette. The cover-locking device also comprises a push member integrally formed on the inner surface of a half-up of the cassette, and an operating member formed on the upper portion of the cover-locking pin. The operating member is always in contact with the push member.