Patents by Inventor Kyung-han AHN

Kyung-han AHN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing electronic component
    Patent number: 10102969
    Abstract: A method of manufacturing an electronic component having high inductance (L) and an excellent quality (Q) factor and direct current (DC)-bias characteristics includes forming a magnetic body in which internal coil parts are embedded, and forming a cover part including a magnetic metal plate on at least one of upper and lower portions of the magnetic body.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: October 16, 2018
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Moon Soo Park, Jong Sik Yoon, Kyung Han Ahn, Dong Hwan Lee, Hye Yeon Cha, Jong Ho Lee
  • Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the same
    Patent number: 9495990
    Abstract: Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.
    Type: Grant
    Filed: January 8, 2014
    Date of Patent: November 15, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-min Kang, Kyung-han Ahn, Sang-mock Lee
  • Soft magnetic exchange-coupled composite structure, and high-frequency device component, antenna module, and magnetoresistive device including the soft magnetic exchange-coupled composite structure
    Patent number: 9437358
    Abstract: A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.
    Type: Grant
    Filed: January 2, 2014
    Date of Patent: September 6, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-min Kang, Kyung-han Ahn, Young-jae Kang, Sang-mock Lee
  • METHOD OF MANUFACTURING ELECTRONIC COMPONENT
    Publication number: 20160189863
    Abstract: A method of manufacturing an electronic component having high inductance (L) and an excellent quality (Q) factor and direct current (DC)-bias characteristics includes forming a magnetic body in which internal coil parts are embedded, and forming a cover part including a magnetic metal plate on at least one of upper and lower portions of the magnetic body.
    Type: Application
    Filed: November 16, 2015
    Publication date: June 30, 2016
    Inventors: Moon Soo PARK, Jong Sik YOON, Kyung Han AHN, Dong Hwan LEE, Hye Yeon CHA, Jong Ho LEE
  • Method of preparing transition metal pnictide magnetocaloric material, transition metal pnictide magnetocaloric material, and device including the same
    Patent number: 9378879
    Abstract: A method of preparing a boron-doped transition metal pnictide magnetocaloric material, the method including: contacting a transition metal halide; a pnictogen element, a pnictogen oxide, or a combination thereof; a boron-containing oxide; and a reducing metal to provide a mixture; and heat treating the mixture to prepare the boron-doped transition metal pnictide magnetocaloric material.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: June 28, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soon-jae Kwon, Tae-gon Kim, Kyung-han Ahn
  • Thermoelectric material having reduced thermal conductivity, and thermoelectric device and module including the same
    Patent number: 9190594
    Abstract: A thermoelectric material including: a thermoelectric matrix including grains with a composition of Formula 1: (BixSb1-x)a(TeySe1-y)b??Formula 1 wherein 1.8?a?2.2, 2.8?b?3.2, 0?x?1, and 0?y?1, and wherein a plurality of dislocations is present along a grain boundary between adjacent grains of the composition of Formula 1.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: November 17, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-il Kim, Kyu-hyoung Lee, Sung-woo Hwang, Kyung-han Ahn
  • Nano-complex thermoelectric material, and thermoelectric module and thermoelectric apparatus including the same
    Patent number: 9190593
    Abstract: A thermoelectric material including: a thermoelectric matrix; and a plurality of metal nanoparticles disposed in the thermoelectric matrix, wherein a difference between a work function of thermoelectric matrix and a work function of a metal particle of the metal nanoparticles is about ?1.0 electron volt to about 1.0 electron volt.
    Type: Grant
    Filed: October 25, 2012
    Date of Patent: November 17, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-woo Hwang, Kyu-hyoung Lee, Sang-il Kim, Kyung-han Ahn
  • Power factor enhanced thermoelectric material and method of producing same
    Patent number: 9130066
    Abstract: A thermoelectric material including a compound represented by Chemical Formula 1 MxCuyBi2-x(Te1-zSez)3??(1) wherein in the Chemical Formula, M is at least one metal element, and x, y, and z independently satisfy the following ranges 0<x?0.1, 0<y?0.05, and 0?z?0.5.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: September 8, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Woo Hwang, Sang Il Kim, Byung Ki Ryu, Kyung Han Ahn
  • Thermoelectric material, thermoelectric device using the same, and method of manufacturing thereof
    Patent number: 8986566
    Abstract: A thermoelectric material including a composition according to Chemical Formula 1: (Bia-xSb1-a-yMb)2-i(TecSe1-c)3-j??Chemical Formula 1 wherein M is an element of Group 13, 0?a?1, 0<b?0.004, 0?x?b, 0?y?b, x+y=b, 0?c?1, ?0.2?i?0.2, and ?0.2?j?0.2.
    Type: Grant
    Filed: June 7, 2012
    Date of Patent: March 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-hyoung Lee, Sung-woo Hwang, Sang-il Kim, Sang-mock Lee, Kyung-han Ahn
  • HARD MAGNETIC EXCHANGE-COUPLED COMPOSITE STRUCTURES AND PERPENDICULAR MAGNETIC RECORDING MEDIA INCLUDING THE SAME
    Publication number: 20150024238
    Abstract: Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.
    Type: Application
    Filed: January 8, 2014
    Publication date: January 22, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-min KANG, Kyung-han AHN, Sang-mock LEE
  • SOFT MAGNETIC EXCHANGE-COUPLED COMPOSITE STRUCTURE, AND HIGH-FREQUENCY DEVICE COMPONENT, ANTENNA MODULE, AND MAGNETORESISTIVE DEVICE INCLUDING THE SOFT MAGNETIC EXCHANGE-COUPLED COMPOSITE STRUCTURE
    Publication number: 20150024236
    Abstract: A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.
    Type: Application
    Filed: January 2, 2014
    Publication date: January 22, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-min KANG, Kyung-han AHN, Young-jae KANG, Sang-mock LEE
  • THERMOELECTRIC MATERIAL, AND THERMOELECTRIC MODULE AND THERMOELECTRIC APPARATUS INCLUDING THE THERMOELECTRIC MATERIAL
    Publication number: 20130298954
    Abstract: A thermoelectric material including a composition of Formula 1: (Bi1-x-zSbxAz)u(Te1-ySey)w,??Formula 1 wherein A is a transition metal, 0?x<1, 0?y?1, 0<z?0.03, 1.8?u?2.2, and 2.8?w?3.2.
    Type: Application
    Filed: March 25, 2013
    Publication date: November 14, 2013
    Inventors: Kyung-han AHN, Sang-il KIM, Byung-ki RYU, Kyu-hyoung LEE, Sung-woo HWANG
  • POWER FACTOR ENHANCED THERMOELECTRIC MATERIAL AND METHOD OF PRODUCING SAME
    Publication number: 20130299754
    Abstract: A thermoelectric material including a compound represented by Chemical Formula 1 MxCuyBi2-x(Te1-zSez)3 ??(1) wherein in the Chemical Formula, M is at least one metal element, and x, y, and z independently satisfy the following ranges 0<x?0.1, 0<y?0.05, and 0?z?0.5.
    Type: Application
    Filed: April 18, 2013
    Publication date: November 14, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Woo HWANG, Sang Il KIM, Byung Ki RYU, Kyung Han AHN
  • THERMOELECTRIC MATERIAL HAVING REDUCED THERMAL CONDUCTIVITY, AND THERMOELECTRIC DEVICE AND MODULE INCLUDING THE SAME
    Publication number: 20130284967
    Abstract: A thermoelectric material including: a thermoelectric matrix including grains with a composition of Formula 1: (BixSb1-x)a(TeySe1-y)b??Formula 1 wherein 1.8?a?2.2, 2.8?b?3.2, 0?x?1, and 0?y?1, and wherein a plurality of dislocations is present along a grain boundary between adjacent grains of the composition of Formula 1.
    Type: Application
    Filed: April 26, 2013
    Publication date: October 31, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sang-il KIM, Kyu-hyoung LEE, Sung-woo HWANG, Kyung-han AHN
  • METHOD OF PREPARING TRANSITION METAL PNICTIDE MAGNETOCALORIC MATERIAL, TRANSITION METAL PNICTIDE MAGNETOCALORIC MATERIAL, AND DEVICE INCLUDING THE SAME
    Publication number: 20130264512
    Abstract: A method of preparing a boron-doped transition metal pnictide magnetocaloric material, the method including: contacting a transition metal halide; a pnictogen element, a pnictogen oxide, or a combination thereof; a boron-containing oxide; and a reducing metal to provide a mixture; and heat treating the mixture to prepare the boron-doped transition metal pnictide magnetocaloric material.
    Type: Application
    Filed: February 28, 2013
    Publication date: October 10, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Soon-jae Kwon, Tae-gon Kim, Kyung-han Ahn
  • THERMOELECTRIC MATERIAL, THERMOELECTRIC DEVICE USING THE SAME, AND METHOD OF MANUFACTURING THEREOF
    Publication number: 20130105725
    Abstract: A thermoelectric material including a composition according to Chemical Formula 1: (Bia-xSb1-a-yMb)2-i(TecSe1-c)3-j??Chemical Formula 1 wherein M is an element of Group 13, 0?a?1, 0<b?0.004, 0?x?b, 0?y?b, x+y=b, 0?c?1, ?0.2?i?0.2, and ?0.2?j?0.2.
    Type: Application
    Filed: June 7, 2012
    Publication date: May 2, 2013
    Applicant: SAMSUNG ELECTRONICS CO. LTD.
    Inventors: Kyu-hyoung LEE, Sung-woo HWANG, Sang-il KIM, Sang-mock LEE, Kyung-han AHN