Abstract: A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract: Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer.

Abstract: The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units.

Abstract: The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: A light emitting device includes a first light emitting diode chip comprising a red wavelength, a second light emitting diode chip comprising a different red wavelength from the wavelength of the first light emitting diode chip, and a plurality of third light emitting diode chips disposed around the first and second light emitting diode chips. The light emitting device emits light in a wavelength region similar to that of solar light, thereby improving color rendition.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: An AC light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. A first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip, and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence period of the second long-persistent phosphor is different from that of the first long-persistent phosphor.

Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract: A light emitting module having a lens is disclosed. The light emitting module includes: a substrate having recesses; light emitting elements mounted within the recesses of the substrate; and a lens which is coupled with the substrate and diffuses the light emitted from the light emitting elements. The light emitting module can have a slim structure by mounting the light emitting elements within the recesses formed in the substrate.

Abstract: A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.

Abstract: An AC light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. A first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip, and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence period of the second long-persistent phosphor is different from that of the first long-persistent phosphor.

Abstract: Disclosed is a light-emitting element for high-current drive. The light-emitting element comprises: a light-emitting diode chip which emits ultraviolet light; and a wavelength conversion layer which converts the wavelength of the ultraviolet light emitted from the light-emitting diode chip into visible light. The light-emitting diode chip is driven at a current density of at least 150 A/cm2.

Abstract: A light emitting device includes a first light emitting diode chip comprising a red wavelength, a second light emitting diode chip comprising a different red wavelength from the wavelength of the first light emitting diode chip, and a plurality of third light emitting diode chips disposed around the first and second light emitting diode chips. The light emitting device emits light in a wavelength region similar to that of solar light, thereby improving color rendition.

Abstract: Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated.

Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.