Abstract: The present disclosure relates to an organic compound having the following structure, and an organic light emitting diode (OLED) and an organic light emitting device including the organic compound. The organic compound can be a bipolar compound having a p-type moiety and an n-type moiety and has high energy level and proper energy bandgap for an emissive layer of the OLED. As the organic compound is applied into the emissive layer, the OLED can maximize its luminous properties as holes and electrons are recombined uniformly over the whole area in an emitting material layer (EML).

Abstract: A 3-dimensional (3D) printing device using a support body composition including a curing agent includes a support body, a structure body, and a controller, in which the support body composition includes a curing agent configured to cure the structure body.

Abstract: An electronic device is provided. The electronic device includes a camera including a lens unit and a lens driving unit and a processor configured to obtain a first image of an object from the camera, move the lens unit by a specified amount using the lens driving unit, obtain a second image of the object that corresponds to a position to which the lens unit is moved, determine a focus position for an image of the object based on a difference between the first image, the second image, and the specified amount of movement, determine an amount of movement for moving the lens unit to the focus position including determining a distance between the object and the lens unit and correcting the determined amount of movement based on the determined distance, and move the lens unit by the determined amount of movement using the lens driving unit.

Abstract: An electronic device includes a camera and a processor. The processor is configured to: obtain a first image from the camera with respect to an external object, move a lens device depending on a specified amount of movement using a lens driver, obtain a second image corresponding to a position to which the lens device moves with respect to the external object, determine a first partial area of the first image corresponding to a specified portion of the external object, determine a second partial area of the second image corresponding to the first partial area based on the first partial area and the specified movement amount, determine a focus position with respect to the lens device based on a defocus difference between the first partial area and the second partial area and the specified movement amount, and move the lens device to the focus position using the lens driver.

Abstract: Disclosed is a crucible that exhibits stable evaporation efficiency and durability with respect to Al, is used in an evaporation source of an electron-beam evaporator, and includes a storage unit, which includes a wall and a bottom and in which a deposition material is placed, and a wetting prevention unit that includes another wall, which is taller than the wall of the storage unit, and another bottom, and is combined with an exterior of the storage unit. The wetting prevention unit is provided so that only the wall of the storage unit is wet with Al, and accordingly, the lifespan of the crucible is lengthened. Further, contact with the ceramic material in order to prevent wetting is minimized, thereby preventing a reduction in the physical properties of the thin film due to the impurities mixed with the deposited Al.

Abstract: An electronic device includes a camera and a processor. The processor is configured to: obtain a first image from the camera with respect to an external object, move a lens device depending on a specified amount of movement using a lens driver, obtain a second image corresponding to a position to which the lens device moves with respect to the external object, determine a first partial area of the first image corresponding to a specified portion of the external object, determine a second partial area of the second image corresponding to the first partial area based on the first partial area and the specified movement amount, determine a focus position with respect to the lens device based on a defocus difference between the first partial area and the second partial area and the specified movement amount, and move the lens device to the focus position using the lens driver.

Abstract: An electronic device is provided. The electronic device includes a camera including a lens unit and a lens driving unit and a processor configured to obtain a first image of an object from the camera, move the lens unit by a specified amount using the lens driving unit, obtain a second image of the object that corresponds to a position to which the lens unit is moved, determine a focus position for an image of the object based on a difference between the first image, the second image, and the specified amount of movement, determine an amount of movement for moving the lens unit to the focus position including determining a distance between the object and the lens unit and correcting the determined amount of movement based on the determined distance, and move the lens unit by the determined amount of movement using the lens driving unit.

Abstract: The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption layer, but in the invention, the buffer layer and the transparent electrode are not formed on a light absorption layer, and the buffer layer, the transparent electrode, and the grid electrode are formed under a CIGS face such that solar light is directly input to the light absorption layer without obstacles, and the first electrode and the buffer layer are patterned in a saw-toothed structure to engage with each other to reduce a distance by which electrons or holes generated by absorbing light energy move to the electrode or the buffer layer.

Abstract: A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s100); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s200); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s300); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer 200 (s400); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s500).

Abstract: A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu2ZnSnS4 thin film layer; forming a Cu2ZnSn(S,Se)4 thin film layer; and forming a Cu2ZnSnS4 thin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

Abstract: Disclosed herein is a device for controlling a sample temperature during photoelectric measurement of the sample. The device for controlling a sample temperature during photoelectric measurement of the sample includes: a sample stage to which a measurement target sample is fixed; a cooling unit for cooling the sample by injecting air; and a temperature measuring unit having a thermometer that measures a temperature of the sample. The device has an effect of easily controlling the temperature of a measurement target sample by employing a direct control method for a sample temperature, in which air or cooled air is injected to the sample.

Abstract: Disclosed is a method of forming a CIGS-based thin film having high efficiency using a simple process at relatively low temperatures. The method includes an Ag thin film forming step and an ACIGS forming step of depositing Cu, In, Ga, and Se on the surface of the Ag thin film using a vacuum co-evaporation process. Ag, constituting the Ag thin film, is completely diffused, while Cu, In, Ga, and Se are deposited to form ACIGS together with Cu, In, Ga, and Se co-evaporated in a vacuum during the ACIGS forming step. The Ag thin film is formed and CIGS elements are then deposited using vacuum co-evaporation to form an ACIGS thin film having improved power generation efficiency at a relatively low temperature of 400° C. or less using only a single-stage vacuum co-evaporation process.

Abstract: A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—Ag2Se core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.

Abstract: Disclosed is a crucible that exhibits stable evaporation efficiency and durability with respect to Al, is used in an evaporation source of an electron-beam evaporator, and includes a storage unit, which includes a wall and a bottom and in which a deposition material is placed, and a wetting prevention unit that includes another wall, which is taller than the wall of the storage unit, and another bottom, and is combined with an exterior of the storage unit. The wetting prevention unit is provided so that only the wall of the storage unit is wet with Al, and accordingly, the lifespan of the crucible is lengthened. Further, contact with the ceramic material in order to prevent wetting is minimized, thereby preventing a reduction in the physical properties of the thin film due to the impurities mixed with the deposited Al.

Abstract: A method for manufacturing a light absorption layer of a thin film solar cell includes: manufacturing a Ib group element-VIa group element binary system nano particle; manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solution precursor including a solvent, binder and Va group element to the Ib group element-VIa group element binary system nano particle; distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element; coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer; and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element.

Abstract: A method for manufacturing a CI(G)S-based thin film using a Cu—Se two-component nanoparticle flux, and a CI(G)S-based thin film manufactured by the method are provided. The method for manufacturing the CI(G)S-based thin film, according to the present invention, comprises the steps of: manufacturing Cu—Se two-component nanoparticles and In nanoparticles; manufacturing a slurry comprising the Cu—Se two-component nanoparticles by mixing the Cu—Se two-component nanoparticles, a solvent, and a binder, and manufacturing a slurry comprising the In nanoparticles by mixing the In nanoparticles, a solvent, and a binder; forming a thin film in which a plurality of layers are laminated by alternately coating the slurry comprising the Cu—Se two-component nanoparticles and the slurry comprising the In nanoparticles on a substrate, regardless of order; and heat-processing the thin film which is formed.

Abstract: Disclosed herein is a device for controlling a sample temperature during photoelectric measurement of the sample. The device for controlling a sample temperature during photoelectric measurement of the sample includes: a sample stage to which a measurement target sample is fixed; a cooling unit for cooling the sample by injecting air; and a temperature measuring unit having a thermometer that measures a temperature of the sample. The device has an effect of easily controlling the temperature of a measurement target sample by employing a direct control method for a sample temperature, in which air or cooled air is injected to the sample.

Abstract: A method of fabricating a CIGS thin film for solar cells using a simplified co-vacuum evaporation process and a CIGS thin film fabricated by the method are disclosed. The method includes: (a) depositing Cu, Ga and Se on a substrate having a substrate temperature ranging from 500° C. to 600° C. through co-vacuum evaporation, (b) depositing Cu, Ga, Se and In through co-vacuum evaporation while maintaining the same substrate temperature as in step (a), and (c) depositing Ga and Se through co-vacuum evaporation, followed by depositing Se alone through vacuum evaporation while lowering the temperature of the substrate. The method can realize crystal growth and band-gap grading by Ga composition distribution while simplifying process steps and significantly reducing a film-deposition time, as compared with a conventional co-vacuum evaporation process, thereby providing improvement in process efficiency.

Abstract: Disclosed are a method of manufacturing a CI(G)S-based thin film including aging of a slurry composed of binary nanoparticles, and a CI(G)S-based thin film manufactured thereby. The method of manufacturing the CI(G)S-based thin film includes: preparing CI(G)S-based binary nanoparticles; mixing the binary nanoparticles, a solution precursor including a CI(G)S-based element, a solvent and a chelating agent, thus preparing a hybrid slurry; aging the hybrid slurry for 5 to 10 days; subjecting the aged hybrid slurry to coating, thus forming a CI(G)S-based thin film; and subjecting the CI(G)S-based thin film to heat treatment. Thereby, high reproducibility can be ensured upon manufacturing a CI(G)S-based thin film for solar cells, and thus reliability of the produced thin film can be increased.

Abstract: Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.