Abstract: A lithium secondary battery includes a cathode formed from a cathode active material including a cathode active material particle having a specific concentration ratio, an anode; and a separation layer interposed between the cathode and the anode. The lithium secondary battery has improved formation discharge amount, formation discharge efficiency and power output.

Abstract: A self-circularization RNA construct that can be expressed in a DNA vector and simultaneously circularized through a self-targeting and splicing reaction to form a circRNA is disclosed. The circRNA can consist only of a gene of interest which can be a coding, non-coding, or a combination thereof. The gene of interest has the advantage of being able to rapidly express a peptide or protein. The formed circRNA has a circular structure and has a stable and high half-life because 5? and 3? ends are not exposed. Accordingly, functional RNA such as miRNA, anti-miRNA, siRNA, shRNA, aptamer, functional RNA for gene/RNA editing, ADAR (adenosine deaminase acting on the RNA)-recruiting RNA, mRNA vaccine, mRNA therapeutic agent, vaccine adjuvant, and CAR-T mRNA can be produced as a stable circRNA in cells.

Abstract: A lithium secondary battery includes a cathode formed from a cathode active material including a first cathode active material particle and a second cathode active material particle, an anode and a separator interposed between the cathode and the anode. The first cathode active material particle includes a lithium metal oxide including a continuous concentration gradient in at least one region between a central portion and a surface portion. The second cathode active material particle includes a lithium metal oxide including elements the same as those of the first cathode active material particle, and the second cathode active material particle has a uniform composition from a central portion to a surface.

Abstract: A substrate support unit of an etching process chamber includes a substrate support portion configured to support a substrate, a cathode under the substrate support portion, the cathode including an upper surface portion under the substrate support portion, the upper surface portion being smaller than a size of the substrate, and a step portion positioned a step downward from an edge portion of the upper surface portion, and a focus ring at an edge portion of the substrate, the focus ring being on the step portion and encompassing a side wall of the step portion and an edge portion of the substrate, the focus ring being configured to make a uniform distribution of an electric field on the substrate.

Abstract: Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.

Abstract: Disclosed is a plasma processing apparatus and a method thereof. A plasma processing apparatus includes a chamber for processing a semiconductor substrate by generating plasma, upper and lower electrodes installed in the chamber, a high frequency power supply for supplying high frequency power to the upper and lower electrodes, and a phase controller adjusting a phase difference of the high frequency power supplied to the upper and lower electrodes.

Abstract: Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.