Patents by Inventor Kyung-hyun Park

Kyung-hyun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120153161
    Abstract: Provided are a THz-wave generation/detection module and a device including the same, which increase heating efficiency and are miniaturized. The module includes a photomixer chip, a lens, a PCB, and a package. The photomixer chip includes an active layer, an antenna, and a plurality of electrode pads. The lens is disposed on the photomixer chip. The PCB includes a plurality of solder balls connected to the electrode pads, under the photomixer chip. The package surrounds a bottom and side of the PCB, and dissipates heating of the active layer, which is transferred from the electrode pad of the photomixer chip to the PCB, to outside.
    Type: Application
    Filed: December 2, 2011
    Publication date: June 21, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sang-Pil Han, Kyung Hyun Park, Hyunsung Ko, Namje Kim, Chul-Wook Lee, Dong-Hun Lee, Young Ahn Leem
  • Publication number: 20120147907
    Abstract: Disclosed is a terahertz wave generator which includes a dual mode semiconductor laser device configured to generate at least two laser lights having different wavelengths and to beat the generated laser lights; and a photo mixer formed on the same chip as the dual mode semiconductor laser device and to generate a continuous terahertz wave when excited by the beat laser light.
    Type: Application
    Filed: September 6, 2011
    Publication date: June 14, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Namje KIM, Kyung Hyun PARK, Young Ahn LEEM, Hyunsung KO, Sang-Pil HAN, Chul-Wook LEE, Dong-Hun LEE
  • Patent number: 8149890
    Abstract: Provided is a multiple distributed feedback laser device which includes a first distributed feedback region, a modulation region, a second distributed feedback region, and an amplification region. An active layer is disposed on the substrate of the first distributed feedback region, the modulation region, the second distributed feedback region, and the amplification region. A first diffraction grating is disposed in the first distributed feedback region to be coupled to the active layer in the first distributed feedback region. A second diffraction grating is disposed in the second distributed feedback region to be coupled to the active layer in the second distributed feedback region. The multiple distributed feedback laser device further includes a first micro heater configured to supply heat to the first diffraction grating and a second micro heater configured to supply heat to the second diffraction grating.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: April 3, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Kyung Hyun Park, Namje Kim, Young Ahn Leem, Sang-Pil Han, Hyunsung Ko, Chul-Wook Lee, Dong-Hun Lee, Jaeheon Shin, Eundeok Sim, Yongsoon Baek
  • Publication number: 20120068090
    Abstract: Provided are a frequency tunable terahertz transceiver and a method of manufacturing a dual wavelength laser. The frequency tunable terahertz transceiver includes: a dual wavelength laser including two distributed feedback lasers that are manufactured in one substrate and output optical signals of respectively different wavelengths; and an optical device receiving the outputted optical signals to generate a terahertz wave.
    Type: Application
    Filed: January 10, 2011
    Publication date: March 22, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventor: Kyung Hyun PARK
  • Publication number: 20120051386
    Abstract: Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.
    Type: Application
    Filed: February 8, 2011
    Publication date: March 1, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Namje KIM, Kyung Hyun PARK, Young Ahn LEEM, Chul-Wook LEE, Sang-Pil HAN, Dong-Hun LEE, Min Yong JEON
  • Patent number: 8039802
    Abstract: Provided are an apparatus for generating/detecting terahertz wave and a method of manufacturing the same. The apparatus includes a substrate, a photo conductive layer, a first electrode and a second electrode, and a lens. The photo conductive layer is formed on an entire surface of the substrate. The first electrode and a second electrode formed on the photo conductive layer. The first and second electrodes are spaced from each other by a certain gap. The lens is formed on the first and second electrodes. The lens is filled in the gap between the first and second electrodes.
    Type: Grant
    Filed: April 21, 2010
    Date of Patent: October 18, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jaeheon Shin, Kyung Hyun Park, Namje Kim, Sang-Pil Han, Chul-Wook Lee, Eundeok Sim, Yongsoon Baek
  • Publication number: 20110192978
    Abstract: Provided is a terahertz wave apparatus. The terahertz wave apparatus includes: a wavelength-fixed laser emitting a first laser light having a fixed first wavelength; a wavelength-swept laser emitting a second laser light having a tunable second wavelength; a coupler coupling the first laser light with the second laser light; and a generator converting a mixed light emitted from the coupler into a terahertz wave, wherein a frequency of the terahertz wave is continuously tunable.
    Type: Application
    Filed: October 20, 2010
    Publication date: August 11, 2011
    Applicants: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, KOREA RESEARCH INSTITUTE OF STANDARD AND SCIENCE
    Inventors: Min Yong JEON, Kyung Hyun PARK, Dae-Su YEE
  • Publication number: 20110150018
    Abstract: Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1×2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1×2 splitter, and a second diffraction grating is coupled to a second twig core of the 1×2 splitter. An active layer-micro heater is designed to supply heat to the active layer. First and second micro heaters are designed to supply heats to the first and second diffraction gratings, respectively, thereby varying a Bragg wavelength.
    Type: Application
    Filed: August 13, 2010
    Publication date: June 23, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Kyung Hyun PARK, Namje Kim, Young Ahn Leem, Sang-Pil Han, Chul-Wook Lee, Jaeheon Shin, Eundeok Sim, Yongsoon Baek
  • Publication number: 20110149368
    Abstract: Provided are a photomixer module and a method of generating a terahertz wave. The photomixer module includes a semiconductor optical amplifier amplifying incident laser light and a photomixer that is excited by the amplified laser light to generate a continuous terahertz wave. The photomixer is formed as a single module together with the semiconductor optical amplifier.
    Type: Application
    Filed: May 26, 2010
    Publication date: June 23, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Namje KIM, Kyung Hyun Park, Young Ahn Leem, Sang-Pil Han, Chul-Wook Lee, Eundeok Sim, Jaeheon Shin
  • Publication number: 20110142082
    Abstract: Provided is a fiber laser generating Terahertz wave. The fiber laser comprises: a light source generating a laser beam as a pump light; first and second resonators first and second resonators first and second resonators resonating the laser beam into first and second wavelengths; and a coupler separating and supplying the laser beam generated in the light source to the first and second resonators and again feeding back the laser beam having the first and second wavelengths resonated respectively in the first and second resonators to the light source.
    Type: Application
    Filed: October 20, 2010
    Publication date: June 16, 2011
    Applicant: ELECTRONIC AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Min Yong JEON, Kyung Hyun Park, Namje Kim, Young Ahn Leem, Sang-Pil Han, Yongsoon Baek, Jaeheon Shin
  • Patent number: 7933524
    Abstract: Provided are an apparatus for and a method of generating millimeter waves, in which millimeter-wave generation and frequency up-conversion can be achieved at the same time using a single device. The apparatus includes a mode-locking laser diode (LD) which has a distributed feedback (DFB) sector and a gain sector and generates high-frequency optical pulses through a passive mode locking process, a modulator which modulates an external optical signal using an electric signal and injects the modulated optical signal to the mode-locking LD to lock the optical pulses, and a radio frequency (RF) locking signaling unit which injects the electric signal to the modulator.
    Type: Grant
    Filed: August 8, 2006
    Date of Patent: April 26, 2011
    Assignees: Electronics and Telecommunications Research Institute, Industry-Academic Cooperation Foundation, Yonsei-University
    Inventors: Kyung Hyun Park, Young Ahn Leem, Kwang Hyun Lee, Woo Young Choi
  • Publication number: 20110090932
    Abstract: Provided is a multiple distributed feedback laser device which includes a first distributed feedback region, a modulation region, a second distributed feedback region, and an amplification region. An active layer is disposed on the substrate of the first distributed feedback region, the modulation region, the second distributed feedback region, and the amplification region. A first diffraction grating is disposed in the first distributed feedback region to be coupled to the active layer in the first distributed feedback region. A second diffraction grating is disposed in the second distributed feedback region to be coupled to the active layer in the second distributed feedback region. The multiple distributed feedback laser device further includes a first micro heater configured to supply heat to the first diffraction grating and a second micro heater configured to supply heat to the second diffraction grating.
    Type: Application
    Filed: December 29, 2010
    Publication date: April 21, 2011
    Inventors: Kyung Hyun PARK, Namje Kim, Young Ahn Leem, Sang-Pil Han, Hyunsung Ko, Chul-Wook Lee, Dong-Hun Lee, Jaeheon Shin, Eundeok Sim, Yongsoon Baek
  • Publication number: 20110068270
    Abstract: Provided are an apparatus for generating/detecting terahertz wave and a method of manufacturing the same. The apparatus includes a substrate, a photo conductive layer, a first electrode and a second electrode, and a lens. The photo conductive layer is formed on an entire surface of the substrate. The first electrode and a second electrode are formed on the photo conductive layer. The first and second electrodes are spaced from each other by a certain gap. The lens is formed on the first and second electrodes. The lens is filled in the gap between the first and second electrodes.
    Type: Application
    Filed: April 21, 2010
    Publication date: March 24, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jaeheon SHIN, Kyung Hyun Park, Namje Kim, Sang-Pil Han, Chul-Wook Lee, Eundeok Sim, Yongsoon Baek
  • Patent number: 7868550
    Abstract: An MgO protective layer formed on a front substrate of a plasma display panel and a method of manufacturing the protective layer are disclosed. The protective layer is manufactured by using an MgO pellet, which is simultaneously doped with a first doping material of BeO and/or CaO among alkali earth metals and a second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3, as a deposition source through a vacuum deposition method. The protective layer remarkably improves a discharge efficiency of the PDP and shortens a discharge delay time, so that it is applied to a signal can PDP. Also, it lowers a manufacturing cost by reducing the number of electronic components.
    Type: Grant
    Filed: February 16, 2007
    Date of Patent: January 11, 2011
    Assignee: CE & Chem Inc.
    Inventors: Jeong Seok Kim, Seok Jung, You Han Kim, Jin Ho Pyo, Yong Seog Kim, Kyung Hyun Park
  • Patent number: 7864824
    Abstract: Provided is a multiple distributed feedback laser device. The laser device includes an active layer, a first diffraction grating, and a second diffraction grating. The substrate includes a first distributed feedback region, a modulation region, and a second distributed feedback region. The first diffraction grating is coupled to the active layer in the first distributed feedback region. The second diffraction grating is coupled to the active layer in the second distributed feedback region. In addition, the laser device includes a first micro heater and a second micro heater. The first micro heater supplies heat to the first diffraction grating. The second micro heater supplies heat to the second diffraction grating. The first micro heater and the second micro heater are controlled independently from each other.
    Type: Grant
    Filed: July 20, 2009
    Date of Patent: January 4, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Kyung Hyun Park, Jaeheon Shin, Namje Kim, Chul-Wook Lee, Eundeok Sim, Sang-Pil Han, Yongsoon Baek
  • Patent number: 7813388
    Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: October 12, 2010
    Assignee: Electronics And Telecommunications Research Institute
    Inventors: Kyung Hyun Park, Hyun Sung Ko, Young Ahn Leem, Min Yong Jeon, Eun Deok Sim, Sung Bock Kim
  • Publication number: 20100158056
    Abstract: Provided is a semiconductor laser device including: a gain area where multi-wavelength lights are generated and gain are provided; a first reflection area where among the multi-wavelength lights, a first-wavelength light is reflected to the gain area in response to a first selection signal; a second reflection area where among the multi-wavelength lights, a second-wavelength light is reflected to the gain area; and a phase control area where a phase of the second-wavelength light is shifted in response to a phase control signal, the phase control area being disposed between the first reflection layer and the second reflection layer.
    Type: Application
    Filed: June 30, 2009
    Publication date: June 24, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jae-Heon Shin, Kyung-Hyun Park, Nam-Je Kim, Chul-Wook Lee, Eun-Deok Sim, Sang-Pil Han, Yong-Soon Baek
  • Publication number: 20100142571
    Abstract: Provided is a multiple distributed feedback laser device. The laser device includes an active layer, a first diffraction grating, and a second diffraction grating. The substrate includes a first distributed feedback region, a modulation region, and a second distributed feedback region. The first diffraction grating is coupled to the active layer in the first distributed feedback region. The second diffraction grating is coupled to the active layer in the second distributed feedback region. In addition, the laser device includes a first micro heater and a second micro heater. The first micro heater supplies heat to the first diffraction grating. The second micro heater supplies heat to the second diffraction grating. The first micro heater and the second micro heater are controlled independently from each other.
    Type: Application
    Filed: July 20, 2009
    Publication date: June 10, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Kyung Hyun PARK, Jaeheon Shin, Namje Kim, Chul-Wook Lee, Eundeok Sim, Sang-Pil Han, Yongsoon Baek
  • Patent number: 7720128
    Abstract: Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.
    Type: Grant
    Filed: May 22, 2006
    Date of Patent: May 18, 2010
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Young Ahn Leem, Eun Deok Sim, Dong Churl Kim, Kyung Hyun Park
  • Publication number: 20100119231
    Abstract: In the manufacture and application of a PLC-ECL type wavelength tunable light source, provided is a wavelength tunable mechanism with improved performance and stability, a light source with improved packaging performance and mass productivity, and a light source applied to a WDM-PON with initialization and stabilization functions. The wavelength tunable light source having a PLC (planar lightwave circuit)-ECL (external cavity laser) structure includes a first housing in which a semiconductor optical gain medium is mounted, a second housing in which a PLC device is mounted, and a third housing in which an optical fiber is mounted. The first, second, and third housings make an optical axis alignment through an optical coupling lens and combined in a laser welding method.
    Type: Application
    Filed: October 31, 2007
    Publication date: May 13, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Byoung-Whi Kim, Manyong Park, Kyung-Hyun Park, Huyn-Ho Yun