Patents by Inventor Kyung II Hong

Kyung II Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices including stress-inducing layers and methods of forming the same
    Patent number: 10937952
    Abstract: A semiconductor device includes a first electrode disposed on a substrate, a magnetic tunnel junction (MTJ) on the first electrode, a capping layer on the MTJ, a stress-inducing layer on the capping layer, and a second electrode on the stress-inducing layer. The stress-inducing layer may have tensile stress.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: March 2, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong Kyu Lee, Young Hyun Kim, Jung Hwan Park, Jung Min Lee, Kyung Ii Hong
  • SEMICONDUCTOR DEVICES INCLUDING STRESS-INDUCING LAYERS AND METHODS OF FORMING THE SAME
    Publication number: 20190393410
    Abstract: A semiconductor device includes a first electrode disposed on a substrate, a magnetic tunnel junction (MTJ) on the first electrode, a capping layer on the MTJ, a stress-inducing layer on the capping layer, and a second electrode on the stress-inducing layer. The stress-inducing layer may have tensile stress.
    Type: Application
    Filed: November 8, 2018
    Publication date: December 26, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong Kyu Lee, Young Hyun Kim, Jung Hwan Park, Jung Min Lee, Kyung II Hong