Abstract: A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.

Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10?8 Torr.

Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10?8 Torr.

Abstract: A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.

Abstract: A semiconductor device, including a substrate; an interlayer insulating layer having a trench on the substrate, the trench having a bottom and sidewalls; a dielectric layer on the bottom and sidewalls of the trench; a work function control layer on the dielectric layer; a wetting layer on the work function control layer; a gap fill layer on the wetting layer; and a reactive layer between the wetting layer and the gap fill layer, the reactive layer being thicker than the gap fill layer.

Abstract: In some embodiments of the inventive subject matter, methods include forming an oxide layer on a semiconductor substrate, injecting nitrogen into the oxide layer to form a nitrogen injection layer and to change the oxide layer to an oxynitride layer, removing a part of the oxynitride layer to leave a portion of the oxynitride layer in a first area and expose the nitrogen injection layer in a second area and forming an insulating layer comprising a portion on the portion of the oxynitride layer in the first area and a portion on the nitrogen injection layer in the second area. The insulating layer may have a higher dielectric constant than the oxide layer.

Abstract: In some embodiments of the inventive subject matter, methods include forming an oxide layer on a semiconductor substrate, injecting nitrogen into the oxide layer to form a nitrogen injection layer and to change the oxide layer to an oxynitride layer, removing a part of the oxynitride layer to leave a portion of the oxynitride layer in a first area and expose the nitrogen injection layer in a second area and forming an insulating layer comprising a portion on the portion of the oxynitride layer in the first area and a portion on the nitrogen injection layer in the second area. The insulating layer may have a higher dielectric constant than the oxide layer.

Abstract: The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

Abstract: The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

Abstract: The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

Abstract: The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.