Abstract: A display panel may include a light emitting element including a light emitting layer and a sensor including a photosensitive layer on a substrate. The light emitting element and the sensor each may include respective portions of first and second common auxiliary layers, which may be continuous under and over the light emitting layer and the photosensitive layer. The first and second common auxiliary layers respectively may include a hole transport material and an electron transport material. The photosensitive layer may include first and second semiconductor layers close to the first and second common auxiliary layers, respectively. The first and second semiconductor layers respectively may include a p-type semiconductor and an n-type semiconductor. The second semiconductor layer may have an uneven surface facing the second common auxiliary layer and may have an average roughness (Rq) of greater than or equal to about 5 nm.

Abstract: An organic compound is represented by Chemical Formula 1A or Chemical Formula 1B. In Chemical Formulas 1A and 1B, Ar1, Ar2, R1, R2, n, and m are each the same as in the detailed description.

Abstract: Disclosed is an amplification circuit, which includes a first amplifier that receives an external signal and performs first band pass filtering on the external signal to output a first filter signal, and a second amplifier that receives the first filter signal and performs second band pass filtering on the first filter signal to output a second filter signal, and a frequency pass bandwidth of the second band pass filtering is narrower than a frequency pass bandwidth of the first band pass filtering.

Abstract: A hybrid communication device, an operation method thereof, and a communication system including the same are provided. The hybrid communication device includes a contact unit that includes an antenna for receiving a first communication signal and an electrode for receiving a second signal, a switch controller that includes a first switch and a second switch and controls the first switch and the second switch based on a change in capacitance of the electrode, and a signal processing unit that receives at least one of the first communication signal and the second communication signal from the contact unit via the first switch and processes the received signal. The first switch is connected to the contact unit, and the signal processing unit is connected to the first switch.

Abstract: The present invention relates to a phosphine precursor for the preparation of a quantum dot, and a quantum dot prepared therefrom. Using the phosphine precursor for the preparation of a quantum dot of the present invention, a quantum dot with improved luminous efficiency and higher luminous color purity can be provided.

Abstract: A polishing composition and a method of fabricating a semiconductor device using the same, the polishing composition including an abrasive; a first additive that includes a C5 to C30 hydrocarbon including an amide group and a carboxyl group or a C5 to C30 hydrocarbon including two or more amine groups; and a second additive that includes a sulfonic acid, a sulfonate, or a sulfonate salt.

Abstract: A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof. The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices.

Abstract: A polishing composition and a method of fabricating a semiconductor device using the same, the polishing composition including an abrasive; a first additive that includes a C5 to C30 hydrocarbon including an amide group and a carboxyl group or a C5 to C30 hydrocarbon including two or more amine groups; and a second additive that includes a sulfonic acid, a sulfonate, or a sulfonate salt.

Abstract: A chemical-mechanical polishing slurry composition, comprising a polishing agent, an amine-based polishing activator, and a roughness adjusting agent, wherein the amine-based polishing activator is a tertiary or quaternary amine, and the roughness adjusting agent is a disaccharide. According to the slurry composition, the roughness of tungsten and silicon oxide films can be modified and the number of particles present on the wafer surface after polishing can be reduces so that defects of the wafer can be prevented.

Abstract: A multilayer ceramic electronic component includes: a ceramic body including a dielectric layer and first and second internal electrodes stacked to be alternately exposed to one side surface and the other side surface with the dielectric layer disposed therebetween; and first and second external electrodes disposed on outer surfaces of the ceramic body to be connected to the first and second internal electrodes, respectively, in which the first and second external electrodes include first and second nickel plating layer having a nickel fineness of 89% or more and 93% or less, respectively.

Abstract: A multilayer ceramic electronic component includes: a ceramic body including a dielectric layer and first and second internal electrodes stacked to be alternately exposed to one side surface and the other side surface with the dielectric layer disposed therebetween; and first and second external electrodes disposed on outer surfaces of the ceramic body to be connected to the first and second internal electrodes, respectively, in which the first and second external electrodes include first and second nickel plating layer having a nickel fineness of 89% or more and 93% or less, respectively.

Abstract: A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof. The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices.

Abstract: A chemical-mechanical polishing slurry composition, comprising a polishing agent, an amine-based polishing activator, and a roughness adjusting agent, wherein the amine-based polishing activator is a tertiary or quaternary amine, and the roughness adjusting agent is a disaccharide. According to the slurry composition, the roughness of tungsten and silicon oxide films can be modified and the number of particles present on the wafer surface after polishing can be reduces so that defects of the wafer can be prevented.

Abstract: A non-adhesive sputtering structure includes a sputtering target having a plate shape; and a backing plate having a plate shape. The backing plate faces the sputtering target, and facing surfaces of the sputtering target and the backing plate are in contact with each other. The backing plate includes a body having a longitudinal axis; and a cooling member through which a cooling material flows in a longitudinal direction of the body substantially parallel to the longitudinal axis. The cooling material conducts heat generated from the sputtering target from sputtering to outside the backing plate. The non-adhesive sputtering structure further includes a plurality of non-adhesive fastening members which maintain the facing surfaces of the backing plate and the sputtering target in contact with each other. The non-adhesive fastening members are extended through a thickness of the backing plate and correspond to regions of the backing plate excluding the cooling member.

Abstract: The present invention relates to an electrolyte for a lithium secondary battery and a lithium secondary battery including the same, wherein the electrolyte comprises an organic solvent and an electrolyte additive, represented by chemical formula 1 and mixed lithium salts in the organic solvent so that room and high temperature life-time properties of the battery can be improved. Said chemical 1 is defined in the specification.

Abstract: A non-adhesive sputtering structure includes a sputtering target having a plate shape; and a backing plate having a plate shape. The backing plate faces the sputtering target, and facing surfaces of the sputtering target and the backing plate are in contact with each other. The backing plate includes a body having a longitudinal axis; and a cooling member through which a cooling material flows in a longitudinal direction of the body substantially parallel to the longitudinal axis. The cooling material conducts heat generated from the sputtering target from sputtering to outside the backing plate. The non-adhesive sputtering structure further includes a plurality of non-adhesive fastening members which maintain the facing surfaces of the backing plate and the sputtering target in contact with each other. The non-adhesive fastening members are extended through a thickness of the backing plate and correspond to regions of the backing plate excluding the cooling member.

Abstract: A light guide member for guiding light may include a first pattern on a first side of the light guide member, the first pattern may include a plurality of first features extending along a first direction, and a plurality of second features extending along a second direction, wherein the first direction crosses the second direction, the first feature has a first feature size, the second feature has a second feature size, and the first feature size may be less than the second feature size.

Abstract: A light guide member for guiding light may include a first pattern on a first side of the light guide member, the first pattern may include a plurality of first features extending along a first direction, and a plurality of second features extending along a second direction, wherein the first direction crosses the second direction, the first feature has a first feature size, the second feature has a second feature size, and the first feature size may be less than the second feature size.