Abstract: Disclosed herein are a retardation film for IPS mode, a polarizing plate including the same, and a liquid crystal display including the same. The retardation film for IPS mode has an out-of-plane retardation at a wavelength of 450 nm (Rth (450) of about ?80 nm to 0 nm, an out-of-plane retardation at a wavelength of 550 nm (Rth (550) of about ?60 nm to 10 nm, an out-of-plane retardation at a wavelength of 650 nm (Rth (650) of about ?60 nm to 10 nm, and an in-plane retardation (Re) at a wavelength of 550 nm of about 0 nm to 10 nm.

Abstract: Disclosed herein are a retardation film for IPS mode, a polarizing plate including the same, and a liquid crystal display including the same. The retardation film for IPS mode has an out-of-plane retardation at a wavelength of 450 nm (Rth (450) of about ?80 nm to 0 nm, an out-of-plane retardation at a wavelength of 550 nm (Rth (550) of about ?60 nm to 10 nm, an out-of-plane retardation at a wavelength of 650 nm (Rth (650) of about ?60 nm to 10 nm, and an in-plane retardation (Re) at a wavelength of 550 nm of about 0 nm to 10 nm.

Abstract: A semiconductor device bonded by an anisotropic conductive film and an anisotropic conductive film composition, the anisotropic conductive film including a reactive monomer having an epoxy equivalent weight of about 120 to about 180 g/eq; a hydrogenated epoxy resin; and a sulfonium cation curing catalyst.

Abstract: An electronic device includes an anisotropic conductive adhesive film as a connection material, wherein the anisotropic conductive adhesive film has a flowability of 50% or more after preliminary pressing at 80° C. and 1 MPa for 1 second and final pressing at 180° C. and 3 MPa for 5 seconds, and a connection resistance increment greater than 0% but not greater than 25%, as calculated by Expression 1: Connection resistance increment (%)=|(A?B)/A|×100??(Expression 1) where A is a connection resistance measured after preliminary pressing at 80° C. and 1 MPa for 1 second and final pressing at 180° C. and 3 MPa for 5 seconds, and B is a connection resistance measured after reliability evaluation at a temperature of 85° C. and a humidity of 85% for 250 hours following preliminary pressing and final pressing.

Abstract: An electronic device includes a connection material formed from an adhesive composition that includes: a polymer resin; a cationic polymerization catalyst represented by Formula 1; and an organic base, where, in Formula 1, R1 may be selected from the group of hydrogen, C1-C6 alkyl, C6-C14 aryl, —C(?O)R4, —C(?O)OR5, and —C(?O)NHR6 (in which R4, R5, and R6 may each independently be selected from C1-C6 alkyl and C6-C14 aryl), R2 may be C1-C6 alkyl, and R3 may be selected from the group of a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group, a C1-C6 alkyl-substituted benzyl group, and a naphthylmethyl group.

Abstract: An electronic device includes an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition. The anisotropic conductive film-forming composition includes a polycyclic aromatic ring-containing epoxy resin, a fluorene epoxy resin, nano silica and conductive particles.

Abstract: An anisotropic conductive film composition for bonding an electronic device may include a hydrogenated bisphenol A epoxy monomer represented by Formula 1 or a hydrogenated bisphenol A epoxy oligomer represented by Formula 2: where n may be an integer from 1 to about 50.

Abstract: An electronic device includes an anisotropic conductive adhesive film as a connection material, wherein the anisotropic conductive adhesive film has a flowability of 50% or more after preliminary pressing at 80° C. and 1 MPa for 1 second and final pressing at 180° C. and 3 MPa for 5 seconds, and a connection resistance increment greater than 0% but not greater than 25%, as calculated by Expression 1: Connection resistance increment (%)=(A?B)/A×100??(Expression 1) where A is a connection resistance measured after preliminary pressing at 80° C. and 1 MPa for 1 second and final pressing at 180° C. and 3 MPa for 5 seconds, and B is a connection resistance measured after reliability evaluation at a temperature of 85° C. and a humidity of 85% for 250 hours following preliminary pressing and final pressing.

Abstract: An anisotropic conductive film composition for bonding an electronic device may include a hydrogenated bisphenol A epoxy monomer represented by Formula 1 or a hydrogenated bisphenol A epoxy oligomer represented by Formula 2: where n may be an integer from 1 to about 50.

Abstract: A semiconductor device bonded by an anisotropic conductive film and an anisotropic conductive film composition, the anisotropic conductive film including a reactive monomer having an epoxy equivalent weight of about 120 to about 180 g/eq; a hydrogenated epoxy resin; and a sulfonium cation curing catalyst.

Abstract: An electronic device includes a connection material formed from an adhesive composition that includes: a polymer resin; a cationic polymerization catalyst represented by Formula 1; and an organic base, where, in Formula 1, R1 may be selected from the group of hydrogen, C1-C6 alkyl, C6-C14 aryl, —C(?O)R4, —C(?O)OR5, and —C(?O)NHR6 (in which R4, R5, and R6 may each independently be selected from C1-C6 alkyl and C6-C14 aryl), R2 may be C1-C6 alkyl, and R3 may be selected from the group of a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group, a C1-C6 alkyl-substituted benzyl group, and a naphthylmethyl group.