Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

Abstract: Disclosed are a polyoxymethylene resin composition and a molded product including the same, wherein the polyoxymethylene resin composition includes a polyoxymethylene resin; and, based on 100 parts by weight of the polyoxymethylene resin, 0.01 to 0.5 parts by weight of alkaline earth metal hydroxide, 0.01 to 1 parts by weight of porous organic/inorganic hybrid silicate, 0.01 to 1 parts by weight of LDPE (Low Density Polyethylene), and 0.02 to 0.5 parts by weight of polyhydric alcohol fatty acid ester, thereby exhibiting improved thermal stability and mold deposit resistance of a molded product while retaining the inherent properties of polyoxymethylene resin, such as mechanical strength and impact resistance.

Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

Abstract: A display apparatus and a controlling method thereof are provided. The controlling method of a display apparatus according to an exemplary embodiment includes, in response to a power-off command being input, storing information regarding an application which is executed at the time when the power-off command is input and entering a standby mode, and in response to a user interaction being detected while the display apparatus maintains a standby mode, entering a pre-power on mode where power is applied to an element included in the display apparatus by performing kernel-level booting.

Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

Abstract: According to example embodiments, a memory device includes a memory cell array, a controller including a normal program controller and a dummy program controller, and a driver. The memory cell array includes a first memory block on a substrate. The first memory block includes a plurality of cell strings on the substrate extending in a vertical direction. The normal program controller is configured to generate a first control signal for programming normal cells of a selected cell string that is selected based on an address received by the controller. The dummy program controller is configured to generate a second control signal for programming at least one dummy cell included in each of the plurality of cell strings before generation of the first control signal. The driver is configured to apply a first operation voltage set for programming the normal cells of the selected cell string to the first memory block in response to the first controller signal.

Abstract: The present invention relates to a method for preparing 1,3,5-trioxane using a distillation tower including a reactor, a distillation section, and an extraction section. Particularly, the present invention relates to a method for preparing 1,3,5-trioxane, in which the water phase separated from the stream discharged through the extraction unit of the reaction distillation tower is used in the process of extracting 1,3,5-trioxane.

Abstract: The present invention relates to a method for preparing 1,3,5-trioxane using a reaction distillation tower including a reactor and integrally formed distillation and extraction sections. Particularly, the present invention relates to a method for preparing 1,3,5-trioxane characterized in that the amount of formaldehyde discharged to the outside of the system is reduced, to thereby increase the yield of 1,3,5-trioxane by recirculating a portion of the water phase, which is discharged through the top of the reaction extraction tower, to the extraction section, and thus to the upper portion of the extractor supply stream which supplies extractant to the extraction section.

Abstract: The present invention relates to a method for preparing 1,3,5-trioxane using a reaction distillation tower including a reactor and integrally formed distillation and extraction sections. Particularly, the present invention relates to a method for preparing 1,3,5-trioxane characterized in that the amount of formaldehyde discharged to the outside of the system is reduced, to thereby increase the yield of 1,3,5-trioxane by recirculating a portion of the water phase, which is discharged through the top of the reaction extraction tower, to the extraction section, and thus to the upper portion of the extractor supply stream which supplies extractant to the extraction section.

Abstract: The present invention relates to a method for preparing 1,3,5-trioxane using a distillation tower including a reactor, a distillation section, and an extraction section. Particularly, the present invention relates to a method for preparing 1,3,5-trioxane, in which the water phase separated from the stream discharged through the extraction unit of the reaction distillation tower is used in the process of extracting 1,3,5-trioxane.

Abstract: A non-volatile memory device includes a cell array including a plurality of memory cells, a page buffer block controlling bitlines of the plurality of memory cells to program the memory cells to a first target state or a second target state, and a control logic configured to skip a verify operation for the memory cells programmed to the first target state and perform a verify operation for the memory cells programmed to the second target state during a second program loop when the memory cells programmed to the first target state are determined to be in a pass condition during a first program loop.

Abstract: A non-volatile memory device includes a cell array including a plurality of memory cells, a page buffer block controlling bitlines of the plurality of memory cells to program the memory cells to a first target state or a second target state, and a control logic configured to skip a verify operation for the memory cells programmed to the first target state and perform a verify operation for the memory cells programmed to the second target state during a second program loop when the memory cells programmed to the first target state are determined to be in a pass condition during a first program loop.

Abstract: A beverage can with a small external sweet reservoir is provided. The reservoir is rotate-ably attached to the bottom of the beverage can. A hole for introducing the sweets is developed a he bottom of the beverage can. The reservoir is a shallow cylindrical can, which is divided into pluralities of sections of same internal volume by pluralities of dividers that are installed inside of the reservoir and are extending radially from the center thereof. Each section is filled with sugar solution, except first section. Face of the reservoir toward the main can body is open. Rubber gaskets are attached at each end of the dividers and the open end of the reservoir, which contacts with the beverage can, to prevent leak of the sugar solution. As a customer turns the reservoir, additional sugar solution is introduced to the beverage can through the hole and the user can adjust sweetness or the beverage.