Patents by Inventor Kyungmoo Lee

Kyungmoo Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7431028
    Abstract: A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.
    Type: Grant
    Filed: April 12, 2007
    Date of Patent: October 7, 2008
    Assignee: Siltron Inc.
    Inventors: Eunsang Ji, Kyungmoo Lee
  • Patent number: 7370646
    Abstract: A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.
    Type: Grant
    Filed: April 12, 2007
    Date of Patent: May 13, 2008
    Assignee: Siltron Inc.
    Inventors: Eunsang Ji, Kyungmoo Lee
  • Patent number: 7353818
    Abstract: A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.
    Type: Grant
    Filed: April 12, 2007
    Date of Patent: April 8, 2008
    Assignee: Siltron Inc.
    Inventors: Eunsang Ji, Kyungmoo Lee
  • Patent number: 7261099
    Abstract: A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.
    Type: Grant
    Filed: October 21, 2005
    Date of Patent: August 28, 2007
    Assignee: Siltron Inc.
    Inventors: Eunsang Ji, Kyungmoo Lee
  • Publication number: 20070190912
    Abstract: A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.
    Type: Application
    Filed: April 12, 2007
    Publication date: August 16, 2007
    Inventors: Eunsang Ji, Kyungmoo Lee
  • Publication number: 20070186917
    Abstract: A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.
    Type: Application
    Filed: April 12, 2007
    Publication date: August 16, 2007
    Inventors: Eunsang Ji, Kyungmoo Lee
  • Publication number: 20070190897
    Abstract: A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.
    Type: Application
    Filed: April 12, 2007
    Publication date: August 16, 2007
    Inventors: Eunsang Ji, Kyungmoo Lee
  • Publication number: 20060107940
    Abstract: A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.
    Type: Application
    Filed: October 21, 2005
    Publication date: May 25, 2006
    Inventors: Eunsang Ji, Kyungmoo Lee