Abstract: A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

Abstract: A white LED with an improved structure for high light emitting efficiency is provided. The white LED includes a light source device and a phosphor containing light emitting nanoparticles and an inorganic phosphor which emit white light by being excited by the light source.

Abstract: An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the light absorption and emission effects of quantum dots and can convert high energy light to low energy light. The efficiency of a solar cell may be improved by providing the cell with a film that converts light above the spectrum-responsive region to light in the cell's spectrum-responsive region. The absorption wavelength region of the films can be broadened by providing the quantum dot compound in a variety of average particle sizes, for example, by providing a mixture of a first quantum dot compound having a first average particle size and a first quantum dot compound having a second average particle size.

Abstract: Provided is a substrate for forming a pattern comprising an inorganic layer having a modified surface, wherein the modified surface is formed by coating a surface of the inorganic layer with a bifunctional molecule comprising a functional group having an affinity for a nanocrystal at one end of the molecule and a functional group having an affinity for the inorganic layer at the other end of the molecule. A method for forming a pattern of nanocrystals is also provided.

Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.

Abstract: Disclosed are an inorganic electroluminescent diode and a method of fabricating the same. Specifically, this invention provides an inorganic electroluminescent diode, which includes a semiconductor nanocrystal layer formed of inorganic material, an electron transport layer or a hole transport layer formed on the semiconductor nanocrystal layer using amorphous inorganic material, and a hole transport layer or an electron transport layer formed beneath the semiconductor nanocrystal layer using inorganic material, and also provides a method of fabricating such an inorganic electroluminescent diode. According to the method of fabricating the inorganic electroluminescent diode of this invention, an inorganic electroluminescent diode can be fabricated while maintaining the properties of luminescent semiconductor material of the semiconductor crystal layer, and also an inorganic electroluminescent diode which is stably operated and has high luminescent efficiency can be provided.

Abstract: A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.

Abstract: A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.

Abstract: A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.

Abstract: An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the light absorption and emission effects of quantum dots and can convert high energy light to low energy light. The efficiency of a solar cell may be improved by providing the cell with a film that converts light above the spectrum-responsive region to light in the cell's spectrum-responsive region. The absorption wavelength region of the films can be broadened by providing the quantum dot compound in a variety of average particle sizes, for example, by providing a mixture of a first quantum dot compound having a first average particle size and a first quantum dot compound having a second average particle size.

Abstract: Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.

Abstract: An electroluminescent element and an electronic device including the electroluminescent element include a glass template having a silica layer as a matrix, electrodes and a luminescent material. Since the electroluminescent element according to the present invention includes silica as a matrix, the electroluminescent element has a stabilized structure even though a space between the luminescent layer and the electrode of the glass template is not filled. Further, such an electroluminescent element may be easily prepared, and thus may be effectively applied to various electronic devices, such as display devices, illumination devices and backlight units.

Abstract: An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the light absorption and emission effects of quantum dots and can convert high energy light to low energy light. The efficiency of a solar cell may be improved by providing the cell with a film that converts light above the spectrum-responsive region to light in the cell's spectrum-responsive region. The absorption wavelength region of the films can be broadened by providing the quantum dot compound in a variety of average particle sizes, for example, by providing a mixture of a first quantum dot compound having a first average particle size and a first quantum dot compound having a second average particle size.

Abstract: A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

Abstract: A method of surface treating a phase change layer may include, before forming the phase change layer, forming a coating layer on a surface of a bottom layer on which the phase change layer is to be formed, wherein the coating layer has a chemical structure for contributing to the adherence of an alkyl radical to the surface of the bottom layer. After forming the coating layer, the phase change layer may be formed using an atomic layer deposition (ALD) method.

Abstract: A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface.

Abstract: A gate structure using nanodots as a trap site, a semiconductor device having the gate structure and methods of fabricating the same are provided. The gate structure may include a tunneling layer, a plurality of nanodots on the tunneling layer, and a control insulating layer including a high-k dielectric layer on the tunneling layer and the nanodots. A semiconductor memory device may further include a semiconductor substrate, the gate structure according to example embodiments on the semiconductor substrate and a first impurity region and a second impurity region in the semiconductor substrate, wherein the gate structure is in contact with the first and second impurity regions.

Abstract: Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures in a particular direction, and removing the nanostructures by etching. According to the method, the size, shape, orientation and regularity of pores of the porous material can be easily controlled, and the preparation of the porous material is simplified, leading to a reduction in preparation costs. Further disclosed is a porous material prepared by the method.

Abstract: Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures in a particular direction, and removing the nanostructures by etching. According to the method, the size, shape, orientation and regularity of pores of the porous material can be easily controlled, and the preparation of the porous material is simplified, leading to a reduction in preparation costs. Further disclosed is a porous material prepared by the method.