Abstract: The present disclosure relates to a remote parking control apparatus, a system including the same, and a method thereof. The remote parking control apparatus includes a communication device configured to perform wireless communication with a parking assistant system in a vehicle, a controller configured to constitute one or more available remote control mode selection screen, and if one of the one or more available remote control mode is selected, constitute a control mode screen, and a display configured to display the one or more available remote control mode selection screen and the control mode screen.

Abstract: Disclosed are novel compounds of specific chemical structures having inhibitory activity on c-Myc/Max/DNA complex formation or pharmaceutically acceptable salts thereof.

Abstract: The present disclosure discloses a battery module including a cell assembly including a plurality of cells arranged in a direction, and an end plate member configured to cover at least outermost sides of the cell assembly in the cell arrangement direction, wherein the end plate member includes two or more openings configured as holes bored in a thickness direction of end plates, and a frame part located between neighboring openings and having rigidity.

Abstract: Disclosed are novel compounds of specific chemical structures having inhibitory activity on c-Myc/Max/DNA complex formation or pharmaceutically acceptable salts thereof.

Abstract: Disclosed are novel compounds of specific chemical structures having inhibitory activity on c-Myc/Max/DNA complex formation or pharmaceutically acceptable salts thereof.

Abstract: Disclosed are novel compounds of specific chemical structures having inhibitory activity on c-Myc/Max/DNA complex formation or pharmaceutically acceptable salts thereof.

Abstract: Certain embodiments of the invention relate to mutant forms of flock house virus B2 protein characterized by having enhanced suppressor of RNA silencing activity as compared to wild type flock house virus B2 protein. Certain embodiments of the invention relate to nucleic acid sequences and vectors that encode and/or direct expression of such mutant forms of flock house virus B2 protein in eukaryotic cells. Certain embodiments of the invention relate to methods of using such mutant forms of flock house virus B2 protein and/or nucleic acid sequences and vectors that encode and/or direct expression thereof in eukaryotic cells to increase a replication rate of a plant or animal virus in a plant or animal cell.

Abstract: Certain embodiments of the invention relate to mutant forms of flock house virus B2 protein characterized by having enhanced suppressor of RNA silencing activity as compared to wild type flock house virus B2 protein. Certain embodiments of the invention relate to nucleic acid sequences and vectors that encode and/or direct expression of such mutant forms of flock house virus B2 protein in eukaryotic cells. Certain embodiments of the invention relate to methods of using such mutant forms of flock house virus B2 protein and/or nucleic acid sequences and vectors that encode and/or direct expression thereof in eukaryotic cells to increase a replication rate of a plant or animal virus in a plant or animal cell.

Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Abstract: In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Abstract: In a method of manufacturing a semiconductor device, an isolation layer pattern is formed on a substrate to define a field region covered by the isolation layer pattern and first and second active regions that is not covered by the isolation layer pattern and protrudes from the isolation layer pattern. A first anti-reflective layer is formed on the isolation layer pattern. A first photoresist layer is formed on the first and second active regions of the substrate and the first anti-reflective layer. The first photoresist layer is partially etched to form a first photoresist pattern covering the first active region. Impurities are implanted into the second active region to form a first impurity region.

Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Abstract: In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Abstract: Certain embodiments of the invention relate to mutant forms of flock house virus B2 protein characterized by having enhanced suppressor of RNA silencing activity as compared to wild type flock house virus B2 protein. Certain embodiments of the invention relate to nucleic acid sequences and vectors that encode and/or direct expression of such mutant forms of flock house virus B2 protein in eukaryotic cells. Certain embodiments of the invention relate to methods of using such mutant forms of flock house virus B2 protein and/or nucleic acid sequences and vectors that encode and/or direct expression thereof in eukaryotic cells to increase a replication rate of a plant or animal virus in a plant or animal cell.

Abstract: Example embodiments relate to an overlay measurement device and method of forming an overlay pattern. The overlay measurement device includes a tray part with a substrate having a first region and a second region, a measurement part which measures an overlay of a first or second element, and a processor part which receives data measured by the measurement part and corrects the position of the first or second element, wherein the substrate comprises a first layer comprising the first overlay marks, a second layer comprising the second overlay marks, which intersects the first direction, in the second region and not comprising overlay marks which are used to measure the overlay of the second element; and the photoresist pattern which is formed on the first and second layers and overlaps the first and second overlay marks.

Abstract: Disclosed are immunological compositions and methods for reducing activity of glucagon signaling using antibodies against glucagon receptor.

Abstract: There is provided a white light emitting device including: a blue LED emitting blue light; a red phosphor excited by the blue light, emitting red light, and including a nitrogen (N)-containing compound; a yellow phosphor excited by the blue light and emitting yellow light; a first green phosphor excited by the blue light, emitting first green light having a first full width half maximum, and including a nitrogen (N)-containing compound; and a second green phosphor excited by the blue light and emitting second green light having a second full width half maximum larger than the first full width half maximum of the first green phosphor.

Abstract: In a method of manufacturing a semiconductor device, an isolation layer pattern is formed on a substrate to define a field region covered by the isolation layer pattern and first and second active regions that is not covered by the isolation layer pattern and protrudes from the isolation layer pattern. A first anti-reflective layer is formed on the isolation layer pattern. A first photoresist layer is formed on the first and second active regions of the substrate and the first anti-reflective layer. The first photoresist layer is partially etched to form a first photoresist pattern covering the first active region. Impurities are implanted into the second active region to form a first impurity region.

Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Abstract: The present invention relates to a diet management system and method, wherein individual information data about users going through diet management are received and users are classified by body morphology, and a user-specific customised solution is provided in accordance with user body morphology classification-based diet targets, lifestyle analysis results and condition diagnostic data, and the user's current circumstances are received and a customised solution is provided that has been changed to match therewith. The present invention makes it possible to provide, in timely fashion, a solution wherein systemic diet management is effected that matches the characteristics of each individual person who is dieting, and wherein changes are effected so as to reflect the current condition of the person who is dieting.