Abstract: A method of manufacturing an all-solid-state battery electrode, an all-solid-state battery electrode manufactured by the method, and an all-solid-state battery including the electrode are disclosed. In the method, a specific type of binder included in the electrode is prepared in a fiber form by applying pressure to the binder under specific conditions, so that the fiber-form binder thus prepared has an average fineness that satisfies a specific range. Therefore, the all-solid-state battery including the electrode has an advantage of having high capacity even in the case of electrode thickening for high loading.

Abstract: A folded module includes a housing, a carrier disposed in the housing and rotatable with respect to the housing about a first axis perpendicular to an optical axis, a rotation holder disposed on the carrier and rotatable with respect to the carrier about a second axis both perpendicular to the optical axis and the first axis, a reflective member disposed on the rotation holder to change a path of incident light, and a first auxiliary member coupled to the carrier to surround a portion of the rotation holder. The first auxiliary member includes a damping member protruding in a direction parallel to the first axis.

Abstract: A power control circuit for a vehicle includes a power switch, N-type semiconductor switches electrically connected between a power supply terminal to which an input voltage is applied and the power switch and in which the N-type semiconductor switches are connected back-to-back, a charge pump circuit for generating a drive voltage to drive the N-type semiconductor switches by boosting the input voltage, a reverse voltage protection circuit electrically connected between an output terminal of the charge pump circuit and a node in which the N-type semiconductor switches are connected to each other, a microcontroller for generating a pulse width modulation signal for the operation of the charge pump circuit, and a voltage attenuation circuit for attenuating the drive voltage and applying the attenuated drive voltage to the microcontroller.

Abstract: A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a second direction different from the first direction, second horizontal conductive lines stacked on the substrate in the first direction, each of the second horizontal conductive lines extending in the second direction, a vertical conductive line between the first horizontal conductive line and the second horizontal conductive line and extending in the first direction, a plurality of first magnetic tunnel junction patterns between the vertical conductive line and each of the first horizontal conductive lines, and a plurality of second magnetic tunnel junction patterns between the vertical conductive lines and each of the second horizontal conductive lines.

Abstract: A memory device includes a base die configured to transmit transmission data that are driven to a first voltage range through a transmission line based on base data, and a core die configured to generate core data by shifting a voltage level of the transmission data received through the transmission line to a second voltage range.

Abstract: An intake/exhaust device of an apparatus for continuously growing a silicon ingot is disclosed.

Abstract: An ingot growing apparatus, according to an embodiment of the present invention, comprises: a growth furnace in which a main crucible accommodating molten silicon for growing an ingot is disposed; a preliminary melting part which receives and melts a solid silicon material and a dopant, and has a preliminary crucible that supplies the molten silicon to the main crucible; a transfer part which transfers the solid silicon material and the dopant to the preliminary crucible; a silicon supply part which supplies the solid silicon material to the transfer part; and a dopant supply part which is disposed on an upper side of the transfer part and supplies the dopant to the transfer part according to a concentration of the dopant melted in the main crucible.

Abstract: Proposed is a detachable mooring system for an offshore structure, including a first tension adjuster connected to an offshore structure, and blocking a pulling chain from proceeding from an outlet of a body toward an inlet, a second tension adjuster connected to one end of the pulling chain and blocking the pulling chain from proceeding from an outlet of a body toward an inlet, a mooring chain having a first longitudinal end connected to one surface of the second tension adjuster body and having a second longitudinal end connected to an anchor on the seabed, a first lead rope having one longitudinal end connected to one end of the pulling chain discharged out through the first tension adjuster outlet, and a second lead rope having one longitudinal end connected to the second tension adjuster body.

Abstract: An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.

Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus according to an aspect of the present invention comprises a growth furnace for growing an ingot, and a main crucible which is accommodated in the growth furnace and accommodates molten silicon, wherein the main crucible comprises: a main crucible bottom portion; a main crucible side portion that extends upwardly from the main crucible bottom portion; and a main crucible inclined portion that has an inclined surface extending upward and outward from the main crucible side portion. In addition, when the molten silicon is supplied from the upper side of the main crucible side portion into the main crucible, the molten silicon is guided into the main crucible along the inclined surface, thereby preventing the molten silicon from splashing around the main crucible.

Abstract: The present invention relates to an apparatus for continuously growing an ingot, and more particularly to an apparatus for continuously growing an ingot which is capable of melting a silicon material in a solid state by means of an induction heating method, and supplying the molten silicon material to a main crucible.

Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus comprising a heater according to an aspect of the present invention may comprise: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to an outer surface of the crucible and surrounding the outer surface of the crucible; and a heater for heating the susceptor, wherein the heater may comprise: a coil which is fixed at a position spaced a predetermined distance apart from an outer surface of the susceptor, is formed to be wound along the outer surface of the susceptor to generate a magnetic field, and heats the susceptor by electromagnetic induction due to the magnetic field; and a shield which is formed to surround an outer surface of the coil to support the coil and blocks the coil from being exposed to the inner space of the growth furnace.

Abstract: Disclosed is a continuous ingot growing apparatus. The continuous ingot growing apparatus according to the present invention may include a growth furnace in which a main crucible is positioned, wherein the main crucible accommodates molten-state silicon to grow an ingot, a material supply unit which supplies a solid-state silicon material before being melted into molten-state silicon, a quantitative supply unit which measures an amount of the solid-state silicon material supplied from the material supply unit and supplies a predetermined amount of the solid-state silicon material, and a preliminary melting unit which melts the predetermined amount of the solid-state silicon material supplied from the quantitative supply unit and supplies molten-state silicon to the main crucible.

Abstract: Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus according to an embodiment of the present invention comprises: a growth furnace in which a main crucible for receiving molten silicon in order to grow an ingot is disposed; a susceptor formed so as to surround the outer surface of the main crucible and including a plurality of heating members which are electrically insulated from each other; and a heater which generates a magnetic field and heats the plurality of heating members through electromagnetic induction by the magnetic field, wherein the plurality of heating members form loops along the outer surface of the main crucible.

Abstract: Disclosed is an ingot growing apparatus. The ingot growing apparatus according to the embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon to grow an ingot, a preliminary crucible which receives a solid silicon material, melts the solid silicon material, and supplies molten silicon to the main crucible, a measurement unit which is installed to pass through the growth furnace and measures a change in level of the surface of the molten silicon in the main crucible, and a control unit which controls supply of the molten silicon in the preliminary crucible to the main crucible on the basis of the measured change in the level of the surface of the molten silicon.

Abstract: A novel peptide analog of acylated oxyntomodulin and its uses are disclosed. A pharmaceutical composition containing the novel peptide analog is useful and effective for preventing and treating obesity or overweightness, or diabetes accompanied by obesity and overweightness. The peptide analog and a composition containing the peptide analog are superior to those of wild-type oxyntomodulin in dual agonism on GLP-1 and glucagon receptors and longer in vivo half-life. A pharmaceutical composition containing the peptide analog is effective in the treatment of metabolic diseases such as obesity and diabetes mellitus.

Abstract: A novel long-acting acylated oxyntomodulin peptide analogue having dual agonism on GLP-1 and glucagon receptors (dual GLP-1R/GlucagonR agonism) and a pharmaceutical composition including the same are disclosed. The novel long-acting acylated oxyntomodulin peptide analogue and the composition are useful for the prevention and treatment of obesity and overweight, or non-insulin-dependent diabetes accompanied by obesity and overweight. The acylated oxyntomodulin peptide analog has dual agonism for GLP-1/glucagon receptors and has an excellent increased in vivo half-life, and the pharmaceutical composition containing the same is useful for the treatment of metabolic diseases such as obesity and diabetes.

Abstract: A novel peptide analog of acylated oxyntomodulin and its uses are disclosed. A pharmaceutical composition containing the novel peptide analog is useful and effective for preventing and treating obesity or overweightness, or diabetes accompanied by obesity and overweightness. The peptide analog and a composition containing the peptide analog are superior to those of wild-type oxyntomodulin in dual agonism on GLP-1 and glucagon receptors and longer in vivo half-life. A pharmaceutical composition containing the peptide analog is effective in the treatment of metabolic diseases such as obesity and diabetes mellitus.

Abstract: The present invention relates to a novel peptide analog of acylated oxyntomodulin and a pharmaceutical composition comprising the same for preventing and treating obesity or overweightness, or diabetes accompanied by obesity and overweightness. The peptides are superior to those of natural oxyntomodulin in dual agonism on GLP-1 and glucagon receptors and longer in vivo half-life. A pharmaceutical composition comprising said peptides is effective in the treatment of metabolic diseases such as obesity and diabetes mellitus.