Abstract: At least one magnetron cathode provided in a sputtering apparatus comprises a magnet assembly in which first and second types of magnet units whose N and S poles are oppositely disposed are alternately disposed adjacent to each other. Two types of loop loci in which drift electron motions are directed in the opposite directions are alternately formed adjacent to each other by said first and second magnet units on a surface of the target. Consequently, a hybrid orbit is formed, and an ion current generation region is enlarged. Furthermore, a moving mechanism for reciprocating the magnet assembly is provided in the magnetron cathode. The above configuration solves the problem involving generation of non-uniform ion bombardment of the target, and achieves a magnetron sputtering electrode capable of depositing a thin film on a relatively large rectangular substrate in a stationary state without moving the substrate.

Abstract: A discharge reaction apparatus utilizing dynamic magnetic field for subjecting the surface of an object to a depositing or an etching process is disclosed. The apparatus comprises a member for generating dynamic magnetic field along the surface of an electrode and a member for limiting or forbidding the circulating motion of electron around the electrode.