Abstract: A semiconductor package including a first semiconductor chip including a logic structure and a second semiconductor chip bonded to the first semiconductor chip may be provided. The first semiconductor chip may include signal lines on a first surface of a first semiconductor substrate and connected to the logic structure, a power delivery network on a second surface of the first semiconductor substrate, the second surface being opposite to the first surface, and penetration vias penetrating the first semiconductor substrate and connecting the power delivery network to the logic structure. The second semiconductor chip may include a capacitor layer that is on a second semiconductor substrate and is adjacent to the power delivery network.

Abstract: A battery module includes a cell stack including stacked pouch-type secondary battery cells, which have electrode leads in opposite directions; a bus bar frame having first and second vertical plates and an upper plate connected to the first and second vertical plates to be hinged to at least one of the first and second vertical plates; and a mono-frame having a rectangular tube shape with an inner space in which the cell stack mounted to the bus bar frame is disposed. A plurality of bus bars are provided at outer surfaces of the first and second vertical plates, and the electrode leads of the cells are electrically connected to the corresponding bus bars through slots formed in the first and second vertical plates. A sensing member electrically connected to the bus bars of the vertical plates to sense electrical characteristics of the cells is disposed at the upper plate.

Abstract: A display device includes scan lines disposed in a first direction; data lines disposed in a second direction substantially perpendicular to the first direction; and unit pixel regions adjacent to the scan lines and the data lines, each unit pixel region including sub-pixels. A portion of an opening region of at least one of the sub-pixels overlaps a unit pixel region adjacent to a unit pixel region corresponding to the at least one of the sub-pixels, and a side of the opening region of the at least one of the sub-pixels extends in a third direction inclined with respect to each of the first direction and the second direction.

Abstract: A display device includes scan lines disposed in a first direction; data lines disposed in a second direction substantially perpendicular to the first direction; and unit pixel regions adjacent to the scan lines and the data lines, each unit pixel region including sub-pixels. A portion of an opening region of at least one of the sub-pixels overlaps a unit pixel region adjacent to a unit pixel region corresponding to the at least one of the sub-pixels, and a side of the opening region of the at least one of the sub-pixels extends in a third direction inclined with respect to each of the first direction and the second direction.

Abstract: A display device includes scan lines disposed in a first direction; data lines disposed in a second direction substantially perpendicular to the first direction; and unit pixel regions adjacent to the scan lines and the data lines, each unit pixel region including sub-pixels. A portion of an opening region of at least one of the sub-pixels overlaps a unit pixel region adjacent to a unit pixel region corresponding to the at least one of the sub-pixels, and a side of the opening region of the at least one of the sub-pixels extends in a third direction inclined with respect to each of the first direction and the second direction.

Abstract: A display device includes scan lines disposed in a first direction; data lines disposed in a second direction substantially perpendicular to the first direction; and unit pixel regions adjacent to the scan lines and the data lines, each unit pixel region including sub-pixels. A portion of an opening region of at least one of the sub-pixels overlaps a unit pixel region adjacent to a unit pixel region corresponding to the at least one of the sub-pixels, and a side of the opening region of the at least one of the sub-pixels extends in a third direction inclined with respect to each of the first direction and the second direction.

Abstract: A display device includes gate lines disposed on a substrate in a first direction, data lines disposed on the substrate in a second direction crossing the first direction, the data lines being insulated from the gate lines, a first insulating film disposed between the data lines, a second insulating film disposed on the data lines and the first insulating film, and a first electrode disposed on the second insulating film. The first insulating film does not overlap the data lines in a direction perpendicular to the substrate.

Abstract: A battery module includes a cell stack including stacked pouch-type secondary battery cells, which have electrode leads in opposite directions; a bus bar frame having first and second vertical plates and an upper plate connected to the first and second vertical plates to be hinged to at least one of the first and second vertical plates; and a mono-frame having a rectangular tube shape with an inner space in which the cell stack mounted to the bus bar frame is disposed. A plurality of bus bars are provided at outer surfaces of the first and second vertical plates, and the electrode leads of the cells are electrically connected to the corresponding bus bars through slots formed in the first and second vertical plates. A sensing member electrically connected to the bus bars of the vertical plates to sense electrical characteristics of the cells is disposed at the upper plate.

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed.

Abstract: There is provided with a complex ocean power system combining ocean current power generation for generating electricity by forming a plurality of ocean current generators in front and rear of sluice structures of tidal power dams and sluice power generation for generating electricity by forming a plurality of ocean current generators in sluice conduits of the sluice structures, comprising: constructing barrages, which cross over the sea, to make up a lake; installing sluice structures of tidal power dams between the barrages 10 to generate electricity by changing a potential energy difference between seawaters caused by tides and ebbs to kinetic energy; installing ocean current generators in front and rear of the sluice structures and in the sluice conduits of the sluice structures to generate electricity by rotating turbine blades using the flow of the incoming seawater from a sea side into a lake side during flood tide and the flow of the seawater discharged from the lake side into the sea side during ebb t

Abstract: An integrated power system combining tidal power generation and ocean current power generation comprises: constructing barrages across the sea to make up a lake; installing turbine structures of a tidal power plant and sluice structures of a tidal power dam for generating electricity by using the potential energy difference between seawaters caused by tides and ebbs; forming an ocean current power park in a lake side by installing a plurality of ocean current generators, for generating electricity by using the flow of the seawater discharged through turbine generators, in a rear lake side of the turbine structures of the tidal power plant; and forming an ocean current power park in a sea side by installing ocean current generators, for generating electricity by using the seawater with the fast speed discharged into the sea through sluice gates, in a rear sea side of the sluice structures of the tidal power dam.

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed.

Abstract: A turbine structure and a gate structure for tidal power plants of the present invention features that middle walls which can be installed as two units of one block are installed with an inside stuffing and a flexible joint so as to absorb and reduce the internal and external effects of the buoyancy and mechanical vibration of the turbine structures and the gate structures on the tidal power plants, save construction costs by shortened construction period and reduced concrete placing quantity, and prevent the cracks of concrete and the generation of hydration heat.

Abstract: Fishways of turbine structures and gate structures for environmentally-friendly tidal power plant through which fish can pass through are provided. The fishway comprises of sea side fishways and lake side fishways to allow fish to move between the sea side and the lake side by forming inside stuffing space filled with seawater for shorter construction period and concrete reduced placing quantity in a certain section of the vertical middle walls installed on the base of which the bottom part is on the marine rock to form blocks of turbine structures and gate structures in a tidal power plant, and seawater on the sea side and the lake side is flown through the front and rear of such inside stuffing space.