Abstract: A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.

Abstract: A touch sensitive display device utilizing infrared ray sensing transistors. The transistors are configured, and comprise specified materials, to allow them to be formed with fewer photolithography processes, reducing cost and manufacturing time.

Abstract: An anisotropic conductive film includes a first thin film layer including concave portions, conductive balls arranged in the concave portions, insulating balls disposed on and between the conductive balls and each having a diameter smaller than the conductive balls, and a second thin film layer disposed covering the insulating balls. A display apparatus includes a pad part and a driving chip, which are electrically connected by the anisotropic conductive film.

Abstract: A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.

Abstract: A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers.

Abstract: A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer.

Abstract: In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor.

Abstract: A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.

Abstract: Exemplary embodiments of the present invention disclose a liquid crystal display (LCD) and a method of manufacturing the same. The LCD may have a display area and a peripheral area. An organic layer of the peripheral area may be patterned using a half-tone mask, and a protrusion member may be formed in the peripheral area. Accordingly, the thin film transistor array panel and the corresponding substrate may be prevented from being temporary adhered in the peripheral area such that the density of the liquid crystal molecules filled in the peripheral area may be uniformly maintained and the display quality of the liquid crystal display may be improved.

Abstract: The present application relates to a liquid crystal display including a first substrate, a plurality of gate lines, a plurality of data lines, thin film transistors connected to the gate and data lines, a barrier rib formed on the data lines, and pixel electrodes connected to the thin film transistors. The thin film transistors can be formed using a colored organic film that has an optical density in a range of 1 to 3. Color filters fill the regions surrounded by the barrier rib. Pixel electrodes can be formed on the color filters. A common electrode can be formed on the second substrate facing the first substrate. A liquid crystal layer can be situated between the first and second substrates, which are spaced apart at a predetermined distance by spacers.

Abstract: An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.

Abstract: A liquid crystal display capable of reducing the stray capacitance of a non-display region and a method of manufacturing the same. The liquid crystal display includes a first substrate, gate lines and data lines intersecting each other on the first substrate to define pixels, a second substrate arranged opposite to the first substrate, a common electrode formed in a display area of the second substrate in which an image is displayed, and a floating electrode formed in a non-display region of the second substrate in which no image is displayed.

Abstract: Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

Abstract: A display panel and a method for manufacturing the same are provided. A blue color filter and a first light shielding pattern are simultaneously formed on top of a substrate through a photolithography process using a blue photoresist layer. Light shielding columns functioning as column spacers are formed above thin film transistors to prevent light leakage through the thin film transistors.

Abstract: A display device includes a gate line delivering a gate on/off voltage, a data line insulated to the gate line, a pixel transistor including a gate electrode connected to the gate line, a drain electrode connected to the data line and a source electrode spaced apart with the drain electrode, a pixel electrode connected to the source electrode, a dummy gate line delivering a kick-back compensation voltage complimentary to the gate on/off voltage, and a compensation capacitance formed between a dummy gate electrode connected to the dummy gate line and a dummy source electrode connected to the pixel electrode.