Abstract: Image sensing devices are disclosed. In some implementations, an image sensing device may include a first sensor layer structured to include a plurality of first photoelectric conversion elements to receive light rays and generate photocharge corresponding to the light rays, a second sensor layer disposed below the first sensor layer, the second sensor layer structured to include a plurality of second photoelectric conversion element vertically overlapping the first photoelectric conversion elements to receive light rays and generate photocharge corresponding to the light rays having passed through the first sensor layer, and a bonding layer disposed between the first and second sensor layers, wherein the bonding layer comprises a lens layer structured to refract light rays having passed through the first sensor layer toward the second sensor layer such that an angle of incidence of the light rays is larger than a refraction angle of the light rays.

Abstract: An image sensing device is provided to include a pixel array including unit pixels. Each unit pixel includes a substrate including a sensing region that generates charge carriers in response to incident light, first and second signal detectors configured to receive control signals for generating a charge current in the sensing region of the substrate and capture the charge carriers moving by the charge current, a lens layer disposed to direct incident light toward the substrate in the unit pixel, and a noise blocking structures disposed over a peripheral region of the sensing region and underneath the lens and structured to leave space above the sensing region open to allow the incident light from the lens layer to reach the sensing region while shield a peripheral region of the sensing region in the substrate from the incident light.

Abstract: An image sensing device includes a first pixel array and a second pixel array. The first pixel array includes a plurality of first unit pixels consecutively arranged to generate a first pixel signal through a photoelectric conversion of incident light. The second pixel array is disposed below the first pixel array, and includes a plurality of second unit pixels consecutively arranged to generate a second pixel signal through a photoelectric conversion of the incident light. The first unit pixels are arranged to have a uniform spacing between adjacent first unit pixels in the first pixel array. The second unit pixels are arranged so that spacing between adjacent second unit pixels are not the same in the second pixel array.

Abstract: An image sensor is disclosed. In some implementations, the image sensor includes a substrate including one or more photoelectric conversion elements arranged in the substrate and structured to convert light into electrical signals representing an image carried by the light, and a plurality of metal layers arranged at different distances from a surface of the substrate and located below the one or more photoelectric conversion elements, each of the metal layers including one or more metal patterns. The one or more metal patterns of the plurality of metal layers are arranged in a concave shape facing the photoelectric conversion element such that incident light reflected by metal layers converges toward the photoelectric conversion element.

Abstract: Image sensing devices are disclosed. In some implementations, an image sensing device may include a first sensor layer structured to include a plurality of first photoelectric conversion elements to receive light rays and generate photocharge corresponding to the light rays, a second sensor layer disposed below the first sensor layer, the second sensor layer structured to include a plurality of second photoelectric conversion element vertically overlapping the first photoelectric conversion elements to receive light rays and generate photocharge corresponding to the light rays having passed through the first sensor layer, and a bonding layer disposed between the first and second sensor layers, wherein the bonding layer comprises a lens layer structured to refract light rays having passed through the first sensor layer toward the second sensor layer such that an angle of incidence of the light rays is larger than a refraction angle of the light rays.

Abstract: An image sensing device includes a first pixel array and a second pixel array. The first pixel array includes a plurality of first unit pixels consecutively arranged to generate a first pixel signal through a photoelectric conversion of incident light. The second pixel array is disposed below the first pixel array, and includes a plurality of second unit pixels consecutively arranged to generate a second pixel signal through a photoelectric conversion of the incident light. The first unit pixels are arranged to have a uniform spacing between adjacent first unit pixels in the first pixel array. The second unit pixels are arranged so that spacing between adjacent second unit pixels are not the same in the second pixel array.

Abstract: An image sensing device is provided to include a pixel array including unit pixels. Each unit pixel includes a substrate including a sensing region that generates charge carriers in response to incident light, first and second signal detectors configured to receive control signals for generating a charge current in the sensing region of the substrate and capture the charge carriers moving by the charge current, a lens layer disposed to direct incident light toward the substrate in the unit pixel, and a noise blocking structures disposed over a peripheral region of the sensing region and underneath the lens and structured to leave space above the sensing region open to allow the incident light from the lens layer to reach the sensing region while shield a peripheral region of the sensing region in the substrate from the incident light.

Abstract: An image sensing device is disclosed. The image sensing device includes a semiconductor substrate and a lens layer. The semiconductor substrate includes a first surface and a second surface opposite to the first surface, and includes a photoelectric conversion element that generates photocharges in response to light incident to the photoelectric conversion element via the first surface. The lens layer is disposed over the semiconductor substrate to direct light through the first surface of the semiconductor substrate into the substrate lens which further directs the incident light into the photoelectric conversion element. The semiconductor substrate is structured to include a substrate lens formed by etching the first surface to a predetermined depth and located between the first surface and the photoelectric conversion element to direct incident light via the first surface to the photoelectric conversion element.

Abstract: An image sensor is disclosed. In some implementations, the image sensor includes a substrate including one or more photoelectric conversion elements arranged in the substrate and structured to convert light into electrical signals representing an image carried by the light, and a plurality of metal layers arranged at different distances from a surface of the substrate and located below the one or more photoelectric conversion elements, each of the metal layers including one or more metal patterns. The one or more metal patterns of the plurality of metal layers are arranged in a concave shape facing the photoelectric conversion element such that incident light reflected by metal layers converges toward the photoelectric conversion element.

Abstract: An image sensing device is disclosed. The image sensing device includes a semiconductor substrate and a lens layer. The semiconductor substrate includes a first surface and a second surface opposite to the first surface, and includes a photoelectric conversion element that generates photocharges in response to light incident to the photoelectric conversion element via the first surface. The lens layer is disposed over the semiconductor substrate to direct light through the first surface of the semiconductor substrate into the substrate lens which further directs the incident light into the photoelectric conversion element. The semiconductor substrate is structured to include a substrate lens formed by etching the first surface to a predetermined depth and located between the first surface and the photoelectric conversion element to direct incident light via the first surface to the photoelectric conversion element.

Abstract: An image sensor is provided to include: imaging pixels located at different locations to receive incident light and to produce pixel signals, each imaging pixel including a light-receiving area that receives a portion of the incident light and a photoelectric conversion element to convert received portion of incident into a pixel signal associated with part of the image; and a phase difference detection pixel located amongst the imaging pixels and structured to include an open part which receives a portion of the incident light and a photoelectric conversion element to convert the received light into a phase difference detection pixel signal, wherein the open part is eccentrically located in the phase difference detection pixel in a first direction, wherein the imaging pixels include a first imaging pixel that is adjacent to the phase difference detection pixel in the first direction and senses a first color.

Abstract: An image sensor may include: a substrate including a plurality of pixels including a first pixel and a second pixel that are located adjacent to each other in a first direction, the first pixel including a first photoelectric conversion element and an open part which is eccentrically located in the first pixel in the first direction and the second pixel including a second photoelectric conversion element; a light-shield pattern that is formed over a part of the first photoelectric conversion element of the first pixel; and a light blocking layer formed between the first photoelectric conversion element and the second photoelectric conversion element.

Abstract: An image sensor is provided to include: imaging pixels located at different locations to receive incident light and to produce pixel signals, each imaging pixel including a light-receiving area that receives a portion of the incident light and a photoelectric conversion element to convert received portion of incident into a pixel signal associated with part of the image; and a phase difference detection pixel located amongst the imaging pixels and structured to include an open part which receives a portion of the incident light and a photoelectric conversion element to convert the received light into a phase difference detection pixel signal, wherein the open part is eccentrically located in the phase difference detection pixel in a first direction, wherein the imaging pixels include a first imaging pixel that is adjacent to the phase difference detection pixel in the first direction and senses a first color.

Abstract: An image sensor may include: a substrate including a plurality of pixels including a first pixel and a second pixel that are located adjacent to each other in a first direction, the first pixel including a first photoelectric conversion element and an open part which is eccentrically located in the first pixel in the first direction and the second pixel including a second photoelectric conversion element; a light-shield pattern that is formed over a part of the first photoelectric conversion element of the first pixel; and a light blocking layer formed between the first photoelectric conversion element and the second photoelectric conversion element.

Abstract: Disclosed is an image sensor with a 3D stack structure, in which pixels of a top plate are realized as image pixels and pixels of a bottom plate are realized as pixels for realizing a phase difference AF, so that the phase difference AF is realized without loss of resolution. In the image sensor with a 3D stack structure, a problem of the reduction of resolution, which is a disadvantage of an existing imaging surface phase difference AF device, is solved, so that a fast phase difference AF is realized while maintaining high resolution without a separate phase difference AF module.

Abstract: Disclosed is an image sensor with a 3D stack structure, in which pixels of a top plate are realized as image pixels and pixels of a bottom plate are realized as pixels for realizing a phase difference AF, so that the phase difference AF is realized without loss of resolution. In the image sensor with a 3D stack structure, a problem of the reduction of resolution, which is a disadvantage of an existing imaging surface phase difference AF device, is solved, so that a fast phase difference AF is realized while maintaining high resolution without a separate phase difference AF module.