Abstract: Provided are a method of depositing a thin film and a method of manufacturing a semiconductor device using the same, and the method of depositing a thin film uses a substrate processing apparatus including a chamber, a substrate support on which a substrate is mounted, a gas supply unit, and a power supply unit that supplies high-frequency and low-frequency power to the chamber, and includes: a step of mounting, on the substrate support, the substrate including a lower thin film deposited under the condition of a process temperature in a low temperature range; a step of depositing an upper thin film on the lower thin film under the condition of the process temperature in the low temperature range; and a step of treating a surface of the upper thin film under the condition of the process temperature in the low temperature range.

Abstract: A method for changing a route when an error occurs in an autonomous driving AI includes collecting error information of the AI when an error of the AI has occurred, extracting, from a storage, past error information about a same kind of AI as that of the AI based on the error information of the AI, generating an error analysis result based on the past error information, generating an error analysis result message based on the error analysis result, and determining whether the driving of the autonomous driving vehicle needs to be stopped based on the error analysis result message.

Abstract: Provided are an electrode assembly, a battery, and a battery pack and vehicle including the same. An electrode assembly, in which a first electrode, a second electrode, and a separator interposed therebetween are wound about an axis to define a core and an outer circumferential surface. At least one of the first electrode and the second electrode includes, at a long side end portion, an uncoated portion exposed beyond the separator in a direction of the axis. At least a part of the uncoated portion is bent in a radial direction of the electrode assembly to define a bent surface region having overlapping layers of the uncoated portion. The bent surface region includes a welding target region having a number of the overlapping layers of the uncoated portion, and the welding target region extends along a radial direction of the electrode assembly.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: An example electronic device includes a housing; a touchscreen display; a microphone; at least one speaker; a button disposed on a portion of the housing or set to be displayed on the touchscreen display; a wireless communication circuit; a processor; and a memory. When a user interface is not displayed on the touchscreen display, the electronic device enables a user to receive a user input through the button, receives user speech through the microphone, and then provides data on the user speech to an external server. An instruction for performing a task is received from the server. When the user interface is displayed on the touchscreen display, the electronic device enables the user to receive the user input through the button, receives user speech through the microphone, and then provides data on the user speech to the external server.

Abstract: The present invention discloses an encoding apparatus using a Discrete Cosine Transform (DCT) scanning, which includes a mode selection means for selecting an optimal mode for intra prediction; an intra prediction means for performing intra prediction onto video inputted based on the mode selected in the mode selection means; a DCT and quantization means for performing DCT and quantization onto residual coefficients of a block outputted from the intra prediction means; and an entropy encoding means for performing entropy encoding onto DCT coefficients acquired from the DCT and quantization by using a scanning mode decided based on pixel similarity of the residual coefficients.

Abstract: The present invention relates to a multi-component host material and an organic electroluminescent device comprising the same. By comprising a specific combination of the multi-component host compounds, the organic electroluminescent device according to the present invention can provide high luminous efficiency and excellent lifespan characteristics.

Abstract: A substrate processing apparatus includes a photoresist coater applying a photoresist film on a substrate, a humidifier increasing an amount of moisture in an ambient to which the photoresist film on the substrate is exposed, and an exposer irradiating the photoresist film exposed to the ambient having the increased amount of moisture with light. The humidifier is disposed between the photoresist coater and the exposer.

Abstract: A method of monitoring in real time pressure resistance welding of a cladding tube and an end plug. The method includes: a first step of detecting welding information including voltage, current, and welding force in a process of pressure resistance welding of a cladding tube and an end plug; a second step of comparing static factors obtained by calculating effective values for the welding information with predetermined reference values, respectively; a third step of calculating dynamic factors for the welding information including the gradient of instantaneous welding force, when the reference values are satisfied in the second step; and a fourth step of determining whether there is defect or not in welding quality by comparing the dynamic factors.

Abstract: A method of monitoring in real time pressure resistance welding of a cladding tube and an end plug. The method includes: a first step of detecting welding information including voltage, current, and welding force in a process of pressure resistance welding of a cladding tube and an end plug; a second step of comparing static factors obtained by calculating effective values for the welding information with predetermined reference values, respectively; a third step of calculating dynamic factors for the welding information including the gradient of instantaneous welding force, when the reference values are satisfied in the second step; and a fourth step of determining whether there is defect or not in welding quality by comparing the dynamic factors.

Abstract: A plasma display panel in which common electrode lines, scan electrode lines, and address electrode lines are located between a front substrate and a rear substrate, the substrates facing each other and being spaced apart from each other. The common electrode lines and scan electrode lines are parallel, the address electrode lines are orthogonal to the scan electrode lines and define pixels at each intersection. Partition walls accurately defining a discharge space are parallel to the address electrode lines, and the address electrode lines are divided into at least two parts to be separately driven. The respective partition walls are divided where the address electrode lines are divided to produce passages for gas flow.