Abstract: A self-grown monopoly compact grit and high pressure, high temperature process for preparing the same. The high pressure, high temperature sintered/synthesized monopoly compact grit is used in various industrial tools such as saw blades, grinding wheels, cutting tools and drill bits. Further, the monopoly compact grit of the present invention is produced from a seed of a mono-crystal of diamond or cubic boron nitride surrounded by either a self-grown crystal layer or an integrally bonded poly-crystalline sintered compact layer. The self-grown crystal layer is a new grown crystal structure where the seed crystal grows into a new phase through a normal diamond or cubic boron nitride synthesis process in the presence of a catalyst metal solvent.

Abstract: A self-grown monopoly compact grit and high pressure, high temperature process for preparing the same. The high pressure, high temperature sintered/synthesized monopoly compact grit is used in various industrial tools such as saw blades, grinding wheels, cutting tools and drill bits. Further, the monopoly compact grit of the present invention is produced from a seed of a mono-crystal of diamond or cubic boron nitride surrounded by either a self-grown crystal layer or an integrally bonded poly-crystalline sintered compact layer. The self-grown crystal layer is a new grown crystal structure where the seed crystal grows into a new phase through a normal diamond or cubic boron nitride synthesis process in the presence of a catalyst metal solvent.

Abstract: A new PCD/PCBN tool and method for making the same involve the use of an intermediate layer of polycrystalline material between a substrate and an outer working layer. The intermediate layer is formulated to limit or prevent the amount of cobalt or other binders which may infiltrate the outer working layer and accelerate deterioration under high throughput conditions. In accordance with one aspect of the invention, the substrate is corrugate or rounded projections to both reduce stress and to decrease infiltration of cobalt through the polycrystalline structures. In accordance with another aspect of the invention, the bonding medium and/or binder agents in the intermediate layer may be selected to decrease mobility of cobalt and the like.