Abstract: A thin film transistor, a manufacturing method of the thin film transistor and display apparatus including the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode that partially overlaps the active layer, wherein the active layer includes a channel portion, a first connection portion contacting one side, namely a first side, of the channel portion and a second connection portion spaced apart from the first connection portion and contacting the other side, namely a second side of the channel portion, wherein the channel portion includes a first channel part overlapping the gate electrode and a second channel part not overlapping the gate electrode.

Abstract: The thin film transistor, fabrication method thereof, and display apparatus comprising the same are provided. The thin film transistor comprises a base substrate, an oxide semiconductor layer on the base substrate, a channel protection layer in contact with the oxide semiconductor layer, and a gate electrode spaced apart from the oxide semiconductor layer and at least partially overlapped with the oxide semiconductor layer, and the channel protection layer includes carbon.

Abstract: A display device includes a main active layer positioned on a substrate includes a channel area, a first conductorized area positioned on a first side of the channel area, and a second conductorized area positioned on a second side of the channel area, a sacrificial active layer is positioned on the main active layer, a gate insulating film is positioned on the sacrificial active layer, a first electrode is positioned on the sacrificial active layer, a portion of the first electrode overlaps the first conductorized area of the main active layer, a second electrode is positioned on the sacrificial active layer, a portion of the second electrode overlaps the second conductorized area of the main active layer, and a third electrode positioned on the gate insulating film overlaps the channel area of the main active layer.

Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device including the thin film transistor are provided, in which the thin film transistor includes a reducing pattern on a substrate, an active layer that is in contact with the reducing pattern, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first conductorization portion connected to one side of the channel portion, and a second conductorization portion connected to the other side of the channel portion, and the channel portion overlaps the gate electrode and does not overlap the reducing pattern.

Abstract: A thin-film transistor array substrate and a display device display device are disclosed. A semiconductor layer includes a channel portion, a first conductorized portion on a first side of the channel portion and including a first main conductorized portion and a first sub-conductorized portion, and a second conductorized portion on a second side of the channel portion and including a second main conductorized portion and a second sub-conductorized portion. A gate insulating film is on the channel portion. A first auxiliary electrode is on the first main conductorized portion. A first electrode is on the first auxiliary electrode. A second auxiliary electrode is on the second main conductorized portion. A second electrode is on the second auxiliary electrode. A third electrode is on the gate insulating film and overlapping the channel portion. Each of the first auxiliary electrode and the second auxiliary electrode contains a conductive oxide.

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, an active pattern disposed on the substrate and including a nitride, a protective pattern disposed on the active pattern and including a non-nitride, a gate electrode overlapping with the active pattern, and a gate insulating layer between the gate electrode and the active pattern.

Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, an active pattern disposed on the substrate and including a nitride, a protective pattern disposed on the active pattern and including a non-nitride, a gate electrode overlapping with the active pattern, and a gate insulating layer between the gate electrode and the active pattern.