Abstract: A semiconductor device is provided.

Abstract: A semiconductor device that includes a lower pattern extending in a first direction, a first channel pattern on the lower pattern, and includes a plurality of first sheet patterns, a second channel pattern on the lower pattern, includes a plurality of second sheet patterns and spaced apart from the first channel pattern, a first gate structure which extends around the first sheet pattern, and includes a first gate electrode and a first gate insulating film, a second gate structure which extends around the second sheet pattern, and includes a second gate electrode and a second gate insulating film, a first gate capping pattern and a second gate capping pattern. The number of first sheet patterns is different from the number of second sheet patterns, and a thickness of the first gate capping pattern is different from a thickness of the second gate capping pattern.

Abstract: A semiconductor device includes a first lower active pattern and a second lower active pattern, a first upper active pattern and a second upper active pattern, a first gate electrode that overlaps the first lower active pattern and the first upper active pattern, a second gate electrode spaced apart from the first gate electrode, a third gate electrode spaced apart from the first gate electrode, a fourth gate electrode spaced apart from the third gate electrode, a first lower source/drain contact that is electrically connected to the first lower active pattern, a first upper source/drain contact that is electrically connected to the second upper active pattern, a lower shared contact in the lower region, and an upper shared contact in the upper region.

Abstract: A semiconductor memory device includes a substrate including a first surface and a second surface, which are opposite to each other, a lower active region on the first surface, the lower active region including a lower gate electrode and a lower active contact, which are spaced apart from each other, an upper active region stacked on the lower active region, the upper active region including an upper gate electrode and an upper active contact, which are spaced apart from each other, a first metal layer on the first surface, and a back-side metal layer on the second surface. The back-side metal layer includes a first shared pad electrically connecting the lower gate electrode to the lower active contact. The first metal layer includes a second shared pad electrically connecting the upper gate electrode to the upper active contact.

Abstract: A semiconductor memory device comprising a substrate having first and second surfaces opposite to each other, a lower active region on the first surface and including a first lower gate electrode and a first lower active contact, an upper active region on the lower active region and including a first upper gate electrode and a first upper active contact that vertically overlap at least a part of the first lower active contact, a first connection structure vertically connecting the first upper active contact to the first lower active contact, a first metal layer on the first surface, and a backside metal layer on the second surface. The first upper gate electrode and the first lower gate electrode are connected and form a first gate electrode. The first metal layer includes a first node line electrically connecting the first gate electrode to the first upper active contact.

Abstract: A semiconductor device includes a substrate, a first active pattern disposed on the substrate, a second active pattern stacked on the first active pattern, a first gate structure extending to intersect the first active pattern and the second active pattern, a second gate structure spaced apart from the first gate structure and extending to intersect the first active pattern and the second active pattern, a first epitaxial pattern interposed between the first gate structure and the second gate structure, and connected to the first active pattern, a second epitaxial pattern interposed between the first gate structure and the second gate structure, and connected to the second active pattern, an insulating pattern interposed between the first epitaxial pattern and the second epitaxial pattern, and a semiconductor film interposed between the insulating pattern and the second epitaxial pattern, the semiconductor film extending along a top surface of the insulating pattern.

Abstract: A semiconductor device includes: an active area that protrudes from an upper surface of a substrate and extends parallel to the upper surface of the substrate; an element isolating area formed on the substrate and around the active area; a channel formed on an upper surface of the active area; a gate structure that surrounds at least two surfaces of the channel; a spacer formed on both sidewalls of the gate structure; and a source/drain layer in contact with both sidewalls of the channel and insulated from the gate structure by the spacer. The gate structure includes, in a cross-section, a first portion whose width in a first direction increases from an upper portion of the gate structure toward a lower portion closer to the substrate, and a second portion whose width in the first direction remains the same or decreases below the first portion.

Abstract: A semiconductor device includes first and second active patterns on first and second PMOS regions, two first source/drain patterns spaced apart along a first direction on the first active pattern and a first channel pattern including first semiconductor patterns between the two first source/drain patterns, and two second source/drain patterns spaced apart along the first direction on the second active pattern and a second channel pattern including second semiconductor patterns between the two second source/drain patterns. A width in a second direction of the each of the first semiconductor patterns is greater than a width of each of the second semiconductor patterns. Each of the first and second source/drain patterns includes semiconductor layers having different germanium concentrations. A number of the semiconductor layers of each of the two second source/drain patterns is greater than a number of the semiconductor layers of each of the two first source/drain patterns.

Abstract: A three-dimensional semiconductor device includes a first active region on a substrate, the first active region including a lower channel pattern and a lower source/drain pattern connected to the lower channel pattern, a second active region stacked on the first active region, the second active region including an upper channel pattern and an upper source/drain pattern connected to the upper channel pattern, a gate electrode on the lower channel pattern and the upper channel pattern, a lower contact electrically connected to the lower source/drain pattern, the lower contact having a bar shape extending on the lower source/drain pattern in a first direction, a first active contact coupled to the lower contact, and a second active contact coupled to the upper source/drain pattern. A first width of the lower source/drain pattern in a second direction is larger than a second width of the lower contact in the second direction.

Abstract: A semiconductor device includes a substrate, a lower active pattern which is spaced apart from the substrate and extends in a first direction, an upper active pattern on the lower active pattern, the upper active pattern being spaced apart from the lower active pattern and extending in the first direction, a gate structure on the substrate, the gate structure extending in a second direction intersecting the first direction, and a cutting pattern on the substrate, the cutting pattern extending in the first direction to cut the gate structure. The gate structure includes a lower gate electrode through which the lower active pattern penetrates, an upper gate electrode which is connected to the lower gate electrode and through which the upper active pattern penetrates, and an insulating pattern on one side of the cutting pattern, the insulating pattern being arranged with the upper gate electrode along the second direction.

Abstract: An ultrasonic diagnosis system according to an embodiment of the present disclosure includes a plurality of ultrasonic output patches configured to be attachable to different body parts, a data receiving unit configured to receive data transmitted from the plurality of ultrasonic output patches, a processing unit configured to acquire an imaging result related to the body part by processing the data, and an output unit configured to output the imaging result related to the body part, in which the ultrasonic output patch includes a multichannel ultrasonic transducer array configured to output imaging ultrasonic waves toward the body part and receive the reflected ultrasonic waves, a signal processing module configured to process a signal transmitted to or received from the multichannel ultrasonic transducer array, and a communication module configured to transmit a signal processing result, which is acquired by the signal processing module, to the data receiving unit.

Abstract: The present invention relates to a processed meat product (sausage and ham) having no added phosphate, which is a harmful ingredient to humans and is used in processes for producing processed meat products, and to a method for producing same. According to the present invention, the pH of ground raw meat is raised to increase the water retention thereof, and a basic pH control agent, alone or combined with a hydrocolloid, is used as a substituting means for phosphate in order to improve syneresis and texture. According to the present invention, a processed meat product having added phosphate may be provided having improved quality without including phosphate.

Abstract: Disclosed herein is a wiper blade assembly which is connected to an automobile wiper arm by means of a connector while coming into close contact with the glass surface of an automobile windshield. The wiper blade assembly includes a flexible blade, an elastic member, and a spoiler. The wiper blade assembly has the effect of reducing the number of constituent elements and achieving the easy assembling operation of the elements by virtue of a simplified configuration thereof.

Abstract: The present invention relates to a wiper blade for wiping a windshield of a motor vehicle, and more particularly, to a so-called flat blade wiper which can be connected to a wiper arm without a primary and a secondary yokes. The wiper blade assembly comprises a flexible elongated wiper strip that includes opposite longitudinal grooves and comes into close contact with a windshield of the vehicle; a rail spring including rail portions disposed in the opposite grooves of the wiper strip; an elastic support member that extends along a longitudinal direction of the wiper strip and includes a plurality of openings; and a connection member which includes an inserting portion inserted in the opening of the elastic support member for connection with the elastic support member and a claw for holding both the wiper strip and the rail spring.

Abstract: The present invention relates to a parking brake lever that is operated by a hand. The parking brake lever has a supporting member fixed to a vehicle frame and which is provided with ratchet portion, and an oscillating member, which oscillates with respect to the supporting member between braking position and releasing position. A push button is provided in one end of the oscillating member. A pawl and a connecting member are operatively interposed between the push button and ratchet portion. The connecting member includes a flexible cable. According to the present invention, even if the push button is inadvertently pressed, the parking brake does not release unless the oscillating member is pulled upwardly. Thus, accident probability caused from inadvertent release of a parking brake is reduced.

Abstract: The present invention relates to a parking brake lever of a vehicle.

Abstract: The present invention relates to a parking brake lever of a vehicle.

Abstract: The present invention relates to a wiper blade for wiping a windshield of a motor vehicle, and more particularly, to a so-called flat blade wiper which can be connected to a wiper arm without a primary and a secondary yokes. The wiper blade assembly comprises a flexible elongated wiper strip that includes opposite longitudinal grooves and comes into close contact with a windshield of the vehicle; a rail spring including rail portions disposed in the opposite grooves of the wiper strip; an elastic support member that extends along a longitudinal direction of the wiper strip and includes a plurality of openings; and a connection member which includes an inserting portion inserted in the opening of the elastic support member for connection with the elastic support member and a claw for holding both the wiper strip and the rail spring.

Abstract: The present invention relates to a parking brake lever that is operated by a hand. The parking brake lever has a supporting member fixed to a vehicle frame and which is provided with ratchet portion, and an oscillating member, which oscillates with respect to the supporting member between braking position and releasing position. A push button is provided in one end of the oscillating member. A pawl and a connecting member are operatively interposed between the push button and ratchet portion. The connecting member includes a flexible cable. According to the present invention, even if the push button is inadvertently pressed, the parking brake does not release unless the oscillating member is pulled upwardly. Thus, accident probability caused from inadvertent release of a parking brake is reduced.

Abstract: The present invention provides a method for producing softer fibers and nonwoven webs that includes forming a mixture comprising (i) a thermoplastic and (ii) an additive selected from the group consisting of polyethylene waxes, glyceryl monostearate, sorbitan tristearate, CATALLOY KS357 MONTELL polyolefin resin, an amide having the chemical structure CH3(CH2)7CH═CH(CH2)xCONH2 where x is selected from 5-15 and mixtures thereof; forming the mixture into fibers and optionally creating a nonwoven web.