Abstract: The present disclosure relates to a PoE cable which satisfies a Power-over-Ethernet plus (PoE+) power transmission characteristics and a data transmission rate of 1 Gbps without an amplification device, such as an additional hub, at a distance of up to 200 meters, and to which an existing commercial connector is applicable.

Abstract: A semiconductor manufacturing apparatus and a method of manufacturing semiconductor device are provided. The semiconductor manufacturing apparatus includes a loading unit configured to load a wafer having a first surface to which a die attach film is attached through an ultraviolet sensitive layer, an ultraviolet light source configured to irradiate ultraviolet light onto the first surface of the wafer attached to the die attach film to weaken adhesive strength of the ultraviolet sensitive layer, and a camera configured to generate a wafer image by capturing ultraviolet light transmitted through a second surface of the wafer opposite to the first surface of the wafer.

Abstract: A semiconductor manufacturing apparatus and a method of manufacturing semiconductor device are provided. The semiconductor manufacturing apparatus includes a loading unit configured to load a wafer having a first surface to which a die attach film is attached through an ultraviolet sensitive layer, an ultraviolet light source configured to irradiate ultraviolet light onto the first surface of the wafer attached to the die attach film to weaken adhesive strength of the ultraviolet sensitive layer, and a camera configured to generate a wafer image by capturing ultraviolet light transmitted through a second surface of the wafer opposite to the first surface of the wafer.

Abstract: There is provided an assembly of a light source and an optical detector, each using a vertical cavity surface emitting laser (VCSEL). To control light emission of the VCSEL light source, spontaneous light emitted laterally therefrom is converted into an electrical signal. The optical detector for monitoring light is provided around the light source to supply the feedback electrical signal. The inner surface facing the light source of the optical detector is circular to absorb the spontaneous light and the outer surface thereof is polygonal having a plurality of peaks and valleys. Therefore, most of spontaneous light absorbed in the optical detector is reflected within, not penetrating the outer surface thereof, thereby extending the path of the spontaneous light in the optical detector and increasing the light intensity converted into an electrical signal.